Ordering number : ENN7399 CPH6519 NPN Epitaxial Planar Silicon Composite Transistors CPH6519 Low-Frequency General-Purpose Amplifier, Driver Applications • • • unit : mm 2212 [CPH6519] 5 4 0.6 6 0.05 2 3 0.95 1 : Base 1 2 : Emitter 1 3 : Collector 2 4 : Emitter 2 5 : Base 2 6 : Collector 1 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter 0.2 0.15 2.9 2.8 • Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6519 is formed with two chips, being equivalent to the 2SC3689, placed in one package. Adoption of FBET process. High DC current gain (hFE=800 to 3200). High VEBO (VEBO≥15V). Excellent in thermal equilibrium and pair capability. 1.6 • Package Dimensions 0.6 • 0.2 Features Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 15 V IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current 20 mA Collector Dissipation IB PC Total Dissipation PT Collector Current Junction Temperature Tj Storage Temperature Tstg 1unit 350 mW 500 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain DC Current Gain Ratio hFE hFE(small/ large) Conditions Ratings min typ max VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA 800 1500 VCE=5V, IC=10mA 0.8 0.98 Marking : 3F Unit 0.1 µA 0.1 µA 3200 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22503 TS IM TA-100338 No.7399-1/4 CPH6519 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage Ratings Conditions min typ Unit max VCE=10V, IC=10mA VCB=10V, f=1MHz 200 MHz IC=50mA, IB=1mA IC=50mA, IB=1mA 0.1 0.5 V 0.8 1.1 V 1.5 pF V(BR)CBO V(BR)CEO IC=10µA, IE=0 IC=1mA, RBE=∞ 60 V Collector-to-Emitter Breakdown Voltage 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 15 V Note : The specifications shown above are for each individual transistor. Electrical Connection C1 B2 E2 TR2 TR1 B1 C2 (Top view) IC -- VCE From top 500µA 450µA 400µA 350µA 300µA 80 250µA 200µA 150µA 60 IC -- VCE 20 Collector Current, IC -- mA 100 Collector Current, IC -- mA E1 100µA 50µA 40 20 16 10µA 9µA 8µA 7µA 12 6µA 5µA 8 4µA 3µA 2µA 4 1µA IB=0 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 VCE=5V 20 30 40 50 ITR10566 hFE -- IC 10000 VCE=5V 7 100 DC Current Gain, hFE --40°C 80 25°C 5 Ta=120°C Collector Current, IC -- mA 10 Collector-to-Emitter Voltage, VCE -- V ITR10565 IC -- VBE 120 IB=0 0 1.0 60 40 3 Ta=120°C 2 25°C --40°C 1000 7 5 20 3 2 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 ITR10567 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 ITR10568 No.7399-2/4 CPH6519 f T -- IC 5 f=1MHz Gain-Bandwidth Product, f T -- MHz 7 Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 1.0 7 3 7 1.0 2 3 5 7 2 10 3 5 7 7 100 2 ITR10569 Collector Current, IC -- mA 3 5 7 2 10 3 5 7 100 ITR10570 VBE(sat) -- IC 10 IC / IB=50 7 2 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 1.0 IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 3 2 5 3 2 0.1 Ta=120°C 25°C 7 5 --40°C 3 5 3 2 25°C 1.0 Ta= --40°C 7 120°C 5 3 2 2 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR10571 Collector Current, IC -- mA 2 s IC=0.1A 7 DC 5 op era tio 3 nT a= 25 °C 2 3 5 0.01 7 5 3 7 10 2 3 5 7 100 2 ITR10572 PC -- Ta 600 s m ms 10 100 0.1 300µs 2 Collector Current, IC -- mA ASO ICP=0.2A 1m 3 7 1.0 Collector Dissipation, PC -- mW 7 Collector Current, IC -- A Cob -- VCB 10 VCE=10V 500 400 to 350 ta 300 ld 200 ip at io 1u n nit iss 100 2 0.001 1.0 0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT05369 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT05368 No.7399-3/4 CPH6519 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. PS No.7399-4/4