LESHAN RADIO COMPANY, LTD. L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain 2 |S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Small Mini Mold Package EIAJ: SC-70 Driver Marking L2SC4226T1G=R2 Ordering Information Device Marking Shipping L2SC4226T1G R2 3000/Tape&Reel L2SC4226T3G R2 10000/Tape&Reel The information in this document is subject to change without notice. Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC4226T1G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current IC 100 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µA VEB = 1 V, I C = 0 DC Current Gain h FE 40 110 Gain Bandwidth Product fT 3.0 4.5 Feed back Capacitance Cre Insertion Power Gain |S21e |2 Noise Figure NF 0.7 7 250 GHz 1.5 9 1.2 VCE = 3 V, IC = 7 mA*1 2.5 *1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. V CE = 3 V, IC = 7 mA pF VCE = 3 V, IE = 0, f = 1 MHz*2 dB VCE = 3 V, IC = 7 mA, f = 1 GHz dB VCE = 3 V, IC = 7 mA, f = 1 GHz Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SC4226T1G TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE IC – Collector Current – mA 100 0 50 100 150 0 1.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 IB =160 µ A VCE = 3 V 140 µ A 120 µ A 100 µ A 15 80 µ A 10 60 µ A 40 µ A 5 100 50 20 20 µ A 0 5 10 0.5 10 1 5 10 50 VCE – Collector to Emitter Voltage – V IC – Collector Current – mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 20 15 VCE = 3 V f = 1.0 GHz |S21e|2 – Insertion Power Gain – dB fT – Gain Bandwidth Product – GHz 0.5 VBE – Base to Emitter Voltage – V 20 10 5 2 1 0.5 10 TA – Ambient Temperature – °C 25 IC – Collector Current – mA VCE = 3 V Free Air 200 hFE – DC Current Gain PT – Total Power Dissipation – mW 20 1 5 10 IC – Collector Current – mA 50 VCE = 3 V f = 1.0 GHz 10 5 0 0.5 1 5 10 50 100 IC – Collector Current – mA Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SC4226T1G NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY VCE = 3 V f = 1 GHz 4 2 0 0.5 1 5 10 50 100 24 |S21e|2 – Insertion Power Gain – dB NF – Noise Figure – dB 6 VCE = 3 V IC = 7 mA 20 16 12 8 4 0 0.1 0.2 0.5 1.0 2.0 5.0 f – Frequency – GHz IC – Collector Current – mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Cre – Feed-back Capacitance – pF 5.0 f = 1 MHz 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 VCB – Collector to Base Voltage – V Rev.O 4/5 LESHAN RADIO COMPANY, LTD. L2SC4226T1G SC-70 / SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.000 0.055 0.004 1.20 0.00 1.40 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.079 0.700 REF 0.095 2.00 2.40 PIN 1. BASE K H INCHES MILLIMETERS MIN MA X MIN MA X 2. EMITTER 3. COLLECTOR 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm Rev.O 5/5