BAW56T Monolithic Dual Swithcing Diode Common

BAW56T
Monolithic Dual Swithcing Diode
Common Anode
SWITCHING DIODES
200 mAMPERES
70 VOLTS
P b Lead(Pb)-Free
Features:
* We Declare that the Material of Product
Compliance With RoHS Requirements
SOT-523F(SC-89)
SOT-523F Outline Dimensions (SC-89)
Unit:mm
A
SC-89
Dim
A
B
C
D
G
J
K
M
N
S
3
T OP V IE W
2
1
K
B
S
G
D
N
M
C
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J
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Min
1.50
0.75
0.60
0.23
0.10
0.30
----1.50
Nom
1.60
0.85
0.70
0.28
0.50BSC
0.15
0.40
----1.60
Max
1.70
0.95
0.80
0.33
0.20
0.50
10
10
1.70
01-Aug-2013
BAW56T
Maximum Ratings
(TA=25°C Unless otherwise noted)
Symbol
Characteristic
Value
Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
IFM(surge)
500
mA
PD
200
mW
1.6
mW/°C
R θJA
600
°C/W
PD
300
mW
2.4
mW/°C
400
°C/W
Peak Forward Surge Current
Total Device Dissipation FR-4 Board, (1) Ta = 25°C
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation FR-4 Board, (2) Ta = 25°C
Derate Above 25°C
Thermal Resistance, Junction to Ambient
R θJA
Junction and Storage Temperature
Tj ,TSTG
Electrical Characteristics
˚C
-55 to + 150
(TA=25˚C Unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
IR=100µA
Forward Voltage
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
Diode Capacitance
VR=0V, f=1.0MHz
Reverse Current
VR=25V, T J =150°C
VR=70V
Symbol
Min
Max
Unit
V(BR)R
70
-
V
715
855
1000
1250
mV
VF
-
CD
-
2.5
PF
IR
-
30
2.5
50
µA
Trr
-
6.0
nS
VR=70V, T J =150°C
Reverse Recover Time
IF=IR =10mA, IR(REC) =1.0mA(Figure1), R L =100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Marking
Item
BAW56T
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Marking
Eqivalent Circuit diagram
3
A1
2/3
1
2
01-Aug-2013
BAW56T
820 Ω
+10 V
2k
0.1 µF
100 µH
tp
tr
IF
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
10
I R , REVERSE CURRENT (µA)
I F , FORWARD CURRENT (mA)
T A = 150°C
T A = 85°C
10
T A = – 40°C
1.0
T A = 25°C
0.1
T A = 125°C
1.0
T A = 85°C
0.1
T A = 55°C
0.01
T A = 25°C
0.001
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
50
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Leakage Current
Figure 2. Forward Voltage
C D ,DIODE CAPACITANCE (pF)
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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01-Aug-2013