BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead(Pb)-Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A SC-89 Dim A B C D G J K M N S 3 T OP V IE W 2 1 K B S G D N M C WEITRON http://www.weitron.com.tw J 1/3 Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 01-Aug-2013 BAW56T Maximum Ratings (TA=25°C Unless otherwise noted) Symbol Characteristic Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C R θJA 600 °C/W PD 300 mW 2.4 mW/°C 400 °C/W Peak Forward Surge Current Total Device Dissipation FR-4 Board, (1) Ta = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board, (2) Ta = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient R θJA Junction and Storage Temperature Tj ,TSTG Electrical Characteristics ˚C -55 to + 150 (TA=25˚C Unless otherwise noted) Characteristic Reverse Breakdown Voltage IR=100µA Forward Voltage IF=1.0mA IF=10mA IF=50mA IF=150mA Diode Capacitance VR=0V, f=1.0MHz Reverse Current VR=25V, T J =150°C VR=70V Symbol Min Max Unit V(BR)R 70 - V 715 855 1000 1250 mV VF - CD - 2.5 PF IR - 30 2.5 50 µA Trr - 6.0 nS VR=70V, T J =150°C Reverse Recover Time IF=IR =10mA, IR(REC) =1.0mA(Figure1), R L =100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Marking Item BAW56T WEITRON http://www.weitron.com.tw Marking Eqivalent Circuit diagram 3 A1 2/3 1 2 01-Aug-2013 BAW56T 820 Ω +10 V 2k 0.1 µF 100 µH tp tr IF 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) T A = 150°C T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage C D ,DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance WEITRON http://www.weitron.com.tw 3/3 01-Aug-2013