WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 BAS16W / BAV70W BAW56W / BAV99W Maximum Ratings (EACH DIODE) Characteristic Symbol Reverse Voltage Forward Current VR IF Peak Forward Surge Current IFM BAS16W BAV70W BAW56W BAV99W 70 75 215 200 500 Unit Volts mAdc mAdc Thermal Characteristics Max Unit 200 1.6 625 mW mW/ C R qJA 300 2.4 417 mW mW/ C C/W TJ, Tstg -55 to + 150 Symbol Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C PD Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate*2 TA=25 C Derate Above 25 C R qJA PD Thermal Resistance Junction to Ambient Junction and Storage Temperature C/W C *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic Symbol Min VBR 75 70 Max Unit Off Characteristics Reverse Breakdown Voltage BAS16W (IBR=100 µAdc ) BAV70W/BAW56W/BAV99W Vdc Reverse Voltage Leakage Current VR=75V VR=70V BAS16W BAV70W/BAW56W/BAV99W VR=25V, VR=25V, TJ=150 C BAS16W/BAW56W/BAV99W TJ=150 C BAV70W VR=75V, TJ=150 C BAS16W VR=70V, TJ=150 C BAW56W/BAV99W VR=70V, TJ=150 C BAV70W WEITRON http://www.weitron.com.tw 1.0 2.5 IR 30.0 60.0 50.0 50.0 100.0 µAdc BAS16W / BAV70W BAW56W / BAV99W Off Characteristic Characteristic Symbol Diode Capacition BAS16W/BAW56W (VR=0, f=1.0MHz) BAV70W/BAV99W Forward Voltage (IF=1.0 mAdc) (IF=10 mAdc) (IF=50 mAdc) (IF=150 mAdc) Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Min Max Unit CD 2.0 1.5 PF VF 715 855 1000 1250 mVdc trr 6.0 nS Device Marking Item Eqivalent Circuit diagram Marking 3 1 3 1 2 A1 3 1 2 A7 3 1 2 BAS16W A6 BAV70W A4 BAW56W BAV99W Figure 1. Recovery Time Equivalent Test Circuit 820 +10V 2.0K 0.1µF tp tr 0.1µF IF t 10% 100 µH 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE Notes:1. A 2.0 k VR IR INPUT SIGNAL variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA WEITRON http://www.weitron.com.tw trr t 90% D.U.T. 3. tp IF » trr IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA BAS16W / BAV70W BAW56W / BAV99W FIGURE 3. LEAKAGE CURRENT FIGURE 2 .FORWARD VOLTAGE 10 IA. REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 100 TA=85 C TA=-40 C 10 TA=25 C 1.0 TA=150 C TA=125 C 1.0 TA=85 C 0.1 TA=55 C 0.01 TA=25 C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 VR. REVERSE VOLTAGE (VOLTS) 1.2 VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(BAS16W) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 FIGURE 5. CAPACITANCE (BAV70W) 1.00 0.90 0.80 0.70 0.60 0 8 FIGURE 6. CAPACITANCE(BAW56W) 1.50 1.25 1.00 0.75 0 2 4 6 VR. REVERSE VOLTAGE (VOLTS) WEITRON http://www.weitron.com.tw 4 6 8 FIGUTRE 7. CAPACITANCE (BAV99W) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS) 8 0.64 0.60 0.56 0.52 0 2 4 6 VR. REVERSE VOLTAGE (VOLTS) 8