FRH20A10 Pb Free Plating Product ® Pb FRH20A10 20 Ampere,100 Volt Dual Common Anode Schottky Half Bridge Rectifier ITO-220AB Features Low forward voltage drop High current capability Low reverse leakage current High surge current capability Unit:mm Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Fully Isolated TO-220FP FullPak Plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approxiamtely Case Case Case Case Reverse Doubler Doubler Negative Positive Common Cathode Common Anode Tandem Polarity Tandem Polarity Prefix "FSH" Prfix "FDH" Prefix "FRH" Prfix "FCH" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL FRH20A10 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum RMS Voltage VRMS 70 V VDC 100 V IF 20 A IFSM 150 A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VF 0.85 0.75 0.95 0.85 V Maximum DC Reverse Current at Rated DC Tj=25°C Blocking Voltage Tj=125°C IR 0.1 50 mA Typical Junction Capacitance per element (2) CJ 250 PARAMETER Maximum DC Blocking Voltage Average Rectified Output Current @TC=95°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Maximum Forward Voltage Note(1) IF=10A@ IF=10A@ IF=20A@ IF=20A@ Typical thermal resistance Junction to Case (3) Operating junction temperature range Storage temperature range RΘJC 3.0 PF °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Note : (1) (2) (3) 300us Pulse Width, 2% Duty Cycle. Measured at 1.0MHz and applied reverse voltage of 4.0 VDC. Thermal Resistance Junction to Case, device mounted on L42 x H25 x W25mm_black Aluminum finny heat sink, Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ FRH20A10 ® RATINGS AND CHARACTERISTIC CURVES FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT 150 20 PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) 25 Rthj-C=3°C/W 15 Without heat sink, Rth j-c=8.5°C/W 10 5 RESISTIVE OR INDUCTIVE LOAD 130 110 90 70 50 30 10 8.3ms Single Half Sine-Wave -10 0 0 25 50 75 100 125 1 150 10 O FIG.3- TYPICAL REVE RSE CHARACTERISTICS FIG.4- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (mA) 10 Tj=125°C 1 0.1 0.01 Tj=25°C 0.001 10 1 Tj=25°C, PULSE WIDTH 300us, 2% Duty Cycle 0.1 0.01 0 20 40 60 80 100 120 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE, (V) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG.5- TYPICAL JUNCTION CAPACITANCE FIG.6- DC REVERSE VOLTAGE DERATING CURVE 120 PERCENT OF DC REVERSE VOLTAGE, (%) 1000 CAPACI TANCE, (pF) 100 NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE, ( C) 100 Tj=25°C, f=1MHz 10 100 80 60 40 Without heat hinkRthj-a : 21°C/W L42xH25xW25mm_black Aluminum finny heat sink, Rthj-a : 6°C/W 20 0 0.1 1 10 REVERSE VOLTAGE, (V) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, ( ℃) Page 2/2 http://www.thinkisemi.com/