® MBR6035PT thru MBR60100PT Pb MBR6035PT thru MBR60100PT Pb Free Plating Product 60 Ampere Dual Common Cathode Switch Mode Schottky Barrier Rectifiers Features Low power loss,high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Unit:mm TO-247AD/TO-3P .640(16.25) .620(15.75) .199(5.05) .175(4.45) .600(15.25) .580(14.75) .087(2.2) .070(1.8) Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems .839(21.3) .819(20.8) .142(3.6) .125(3.2) .170(4.3) .145(3.7) .798(20.25) .777(19.75) .095(2.4) .126(3.2) .110(2.8) .050(1.25) .045(1.15) Mechanical Data .030(0.75) .017(0.45) Case: TO-247AD/TO-3P outline Epoxy: UL 94V-0 rate flame retardant Polarity: As marked on diode body Mounting position: Any Weight: 6.0 gram approximately .225(5.7) .204(5.2) .225(5.7) .204(5.2) Case Case Negative Positive Common Cathode Common Anode Suffix "PT" Suffix "PA" Case Case Doubler Series Connection Tandem Polarity Tandem Polarity Suffix "PD" Suffix "PS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR 6035 6045 6050 6060 6090 60100 PT PT PT PT PT PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 V Maximum RMS voltage VRMS 24 31 35 42 63 70 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 V Maximum average forward rectified current IF(AV) 60 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 60 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 420 A Peak repetitive reverse surge Current (Note 1) IRRM 1 A Maximum instantaneous forward voltage (Note 2) IF=30A, TJ=25℃ IF=30A, TJ=125℃ IF=60A, TJ=25℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change,(Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 0.70 0.75 0.84 0.60 0.65 - 0.82 0.93 0.98 1 30 20 10,000 10 V mA V/μs O RθJC 1.2 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBR6035PT thru MBR60100PT RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 75 60 45 30 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 15 0 0 50 100 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 600 8.3ms Single Half Sine Wave JEDEC Method 500 400 300 200 100 0 1 150 10 FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 MBR6035PT-MBR6045PT MBR6050PT-MBR60100PT 1000 Pulse Width=300μs 1% Duty Cycle INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG TJ=125℃ 100 MBR6050PT-60100PT TJ=25℃ MBR6050PT-60100PT 10 TJ=125℃ MBR6035PT-6045PT 1 TJ=25℃ MBR6035PT-6045PT 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 0.001 0 1.1 1.2 FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 10000 40 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) MBR6035PT-MBR6045PT MBR6050PT-MBR6060PT MBR6090PT-MBR60100PT 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 1000 100 0.1 1 10 REVERSE VOLTAGE (V) Rev.05 © 2006 Thinki Semiconductor Co., Ltd. 100 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION (sec) Page 2/2 http://www.thinkisemi.com/