S15U50S

S15U50S
Pb Free Plating Product
®
Pb
S15U50S
15 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier
High surge Forward current capability
●
IF(AV) 15A
●
VRRM
.161(4.10)
.154(3.90)
.075(1.90)
.067(1.70)
50V
.014(0.35)
.010(0.25)
Mounting Pad Layout
.045(1.15)
.041(1.05)
.132(3.36)
■ Applications
.055(1.40)
Low Power loss, High efficiency
.260(6.60)
.252(6.40)
●
Dimensions in inches and (millimeters)
.191(4.86)
TO-277/POWERDI5
.215(5.40)
.205(5.20)
●
.039(1.00)
.031(0.80)
Bottom
.055(1.40)
.075(1.90)
.071(1.80)
●
Switching Power Supply Industry
●
Photovoltaic Solar cell Protection
Schottky Rectifier
LEFT PIN
RIGHT PIN
.033(0.85)
■ Features
.072(1.84)
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Limiting Values(Absolute Maximum Rating)
SS15U50
Item
Symbol
Repetitive Peak Reverse Voltage
VRRM
V
Io
A
IFSM
A
2
I t
2
A s
Tstg
℃
-55 ~ +150
Tj
℃
-55~+150
RθJ-C
℃/W
Average Rectified Output Current
Surge(Non-repetitive)Forward
Current
Current Squared Time
Storage Temperature
Junction Temperature
Thermal Resistance(Typical)
Unit
Conditions
50
60HZ sine wave,
15
R- load, Ta=25℃
275
60HZ sine wave, 1 cycle, Ta=25℃
313
1ms≤t<8.3ms Tj=25℃
8
Between Junction and Case
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Symbol
Unit
VFM
V
Reverse Breakdown Voltage
Leakage Current
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
VBR
V
IR
mA
Test Condition
Min
Typ
Max
I FM =15.0A,Tj=25℃
-
0.43
0.47
I FM =15.0A,Tj=125℃
-
0.37
0.40
IR=0.3mA
50
-
-
VR=50V,Tj=25℃
-
-
0.5
VR=50V,Tj=125℃
-
-
100
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S15U50S
®
FIG1: IF ( AV ) --Tc Derating
20
FIG2:Surge Forward Current Capadility
IFSM(A)
Io(A)
Rating and Characteristic Curves
18
16
14
360
8.3ms Single Half Since-Wave
JEDEC Method
300
240
12
180
10
8
120
6
60
4
2
0
0
50
0
100
150
Tc(℃ )
IRRM(mA)
IF(A)
FIG3:Instantaneous Forward Voltage
100
10
2
1
20
100
Number of Cycles
FIG4:Typical Reverse Characteristics
100
10
Tj=100℃
10
1.0
Ta=25℃
1.0
0.1
Tj=25℃
0.01
0.1
0
0.2
0.4
0.6
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
0.8
1.0
VF(V)
0
20
40
60
80
100
VRM(%)
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