RL201 thru RL207 Pb Free Plating Product ® Pb RL201 thru RL207 2.0 Ampere Silicon General Purpose Rectifier Diodes DO-15 Features • High surge current capability • 2.0 ampere operation at TA = 75oC with no thermal • runaway • Low reverse leakage • Construction utilizes void-free molded plastic technique. • High temperature soldering guaranteed: • 250oC/10 seconds, 0.375” (9.5mm) lead length, • 5 lbs (2.3kg) tension Unit: inch(mm) .034(.86) .300(7.6) .230(5.8) 1.0(25.4)MIN. .028(.71) Mechanical Data .140(3.6) Case: Molded plastic, DO-15. • Terminals: Plated axial leads, solderable per • MIL-STD-750, method 2026 • Polarity: Color band denotes cathode end. • Mounting Position: Any. 1.0(25.4)MIN. • .104(2.6) Absolute Maximum Ratings and Characteristics @ 25 ℃ unless otherwise specified. Symbols RL201 RL202 RL203 RL204 RL205 RL206 RL207 Units Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward current at TA = 75 OC I(AV) 2 Amps IFSM 70 Amps VF 1 Volts Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (MIL-STD-750D 4066 method) Maximum instantaneous forward voltage at IFM = 2.0A , TA = 25oC (Note 2) O Maximum DC reverse current TA = 25 C at rated DC blocking voltage TA = 100 OC Typical thermal resistance Typical junction capacitance (Note 1) Operating and storage temperature range IR 5 RΘJA 40 CJ 20 TJ ,TS µA 50 -65 to +175 O C/W pF O C Notes: (1) Measured at 1MHZ and applied reverse voltage of 4volts (2) Pulse test: pulse width 300 uSec, Duty cycle 1%. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ RL201 thru RL207 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 200 10 I F , INSTANTANEOUS FORWARD CURRENT (A) Single phase half wave 60 Hz resistive or inductive load 9.5mm lead lengths 1.0 0.1 Tj=25o C Pulse Width=300 s 0.01 0 TA, AMBIENT TEMPERATURE (o C) 0.4 0.8 75 100 f=1MHz Tj =25o C 60 45 30 15 8.3ms Single Half Sine-Wave JEDEC Mathod 1 10 1.6 Fig.2 Typical Forward Characteristics Fig.1 Forward Current Derating Curve 0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) CJ , CAPACITANCE (pF) I FSM , PEAK FORWARD SURGE CURRENT (A) Io [AV] , AVERAGE FORWARD RECTIFIED CURRENT (A) 2.5 ® 10 1.0 100 NUMBER OF CYCLES AT 60 Hz 1 10 100 VR, REVERSE VOLTAGE (V) Fig.4 Typical Junction Capacitance Fig.3 Max Non-Repetitive Peak Forward Surge Current Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/