EM513 thru EM518 Pb Free Plating Product ® Pb EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch(mm) Features • Low leakage • Low forward voltage drop • High current capability .034(.86) .028(.71) 1.0(25.4)MIN. Low cost .205(5.2) .160(4.1) • Mechanical Data • Case: Molded plastic, DO-41 • Mounting Position: Any • Terminals: Axial leads, solderable per MIL-STD-202 1.0(25.4)MIN. .107(2.7) .080(2.0) Absolute Maximum Ratings (Ta = 25oC) Symbols EM 513 EM 516 EM 518 Units Maximum repetitive peak reverse voltage VRRM 1600 1800 2000 V Maximum RMS voltage VRMS 1120 1260 1400 V Maximum DC blocking voltage VDC 1600 1800 2000 V Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ IFAV A 1 Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 30 A Maximum forward voltage at IF = 1.0A DC TJ = 25oC VF 1.1 V Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC IR 5 500 µA µA Typical junction capacitance (Note 1) CJ 15 pF RthA 50 ℃/W TJ ,TS -55 to +150 ℃ Typical thermal resistance (Note 2) Operating and storage temperature range Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC. 2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ EM513 thru EM518 ® FIG.2-TYPICAL FORWARD CHARACTERISTICS FIG. 1 – FORWARD CURRENT DERATING CURVE INSTANTANEOUS FORWARD CURRENT,(A) 20 1.0 AVERAGE FORWARD CURRENT AMPERES SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.8 0.6 0.4 0.2 0 25 50 75 125 10 0 150 175 10 4.0 2.0 1.0 0.4 T J = 25℃ CPULSE WIDTH 300us 1%DUTY CYCLE 0.2 0.1 0.04 0.02 0.01 0.6 INSTANTANEOUS REVERSE CURRENT MICROAMPERS PEAK FORWARD SURGE CURRENT AMPERES 50 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 30 20 10 0 2 4 10 20 1.4 1.2 1.5 FIG.6-TYPICAL REVERSE CHARACTERISTICS FIG. 3 – MAXIMUM NON-REPETITIVE SURGE CURRENT 1 1.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE ( ) 40 0.8 100 40 10 4 1.0 TJ = 100℃ 0.4 0.1 0.04 TJ = 25℃ 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTGE,(%) NUMBER OF CYCLES AT 60Hz FIG.5 – TYPICAL JUNCTION CAPACITANCE 100 CAPACITANCE, (pF) 40 20 TJ = 25℃ 10 f = 1.0 MHz 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/