MUR1020D thru MUR1060D - Thinki Semiconductor Co.,Ltd.

MUR1020D thru MUR1060D
®
Pb
MUR1020D thru MUR1060D
Pb Free Plating Product
10.0 Ampere Heatsink Doubler Polarity Ultra Fast Recovery Rectifier
Unit : inch (mm)
TO-220AB
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
.419(10.66)
.196(5.00)
.163(4.16)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.624(15.87)
.548(13.93)
.50(12.7)MIN
.269(6.85)
.177(4.5)MAX
Mechanical Data
¬ Case:TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.2 gram approximately
.226(5.75)
.054(1.39)
.045(1.15)
.025(0.65)MAX
.1(2.54)
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "CT"
Suffix "A"
Case
Doubler
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MUR1020CT
MUR1020A
MUR1020D
MUR1040CT
MUR1040A
MUR1040D
MUR1060CT
MUR1060A UNIT
MUR1060D
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
o
Current TC=100 C
IF(AV)
10.0
A
IFSM
100
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
VF
0.98
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
1.3
uA
250
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
65
Operating Junction and Storage
Temperature Range
V
10.0
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
1.7
R JC
2.2
TJ, TSTG
-55 to +150
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MUR1020D thru MUR1060D
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
100
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
8
6
4
2
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
MUR1020D
MUR1040D
5
MUR1060D
1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/