MUR1605 thru MUR1660 ® Pb MUR1605 thru MUR1660 Pb Free Plating Product 16.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier Unit : inch (mm) TO-220AB .054(1.39) .045(1.15) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .038(0.96) .019(0.50) Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams .50(12.7)MIN Application .1(2.54) .624(15.87) .139(3.55) MIN .548(13.93) .196(5.00) .163(4.16) .269(6.85) .419(10.66) .387(9.85) .226(5.75) Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .025(0.65)MAX .1(2.54) Case Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N" Doubler Suffix "D" Case Reverse Doubler Suffix "E" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. COMMON CATHODE POLARITY SUFFIX "CT" COMMON ANODE POLARITY DOUBLER POLARITY SUFFIX "N" SUFFIX "D" REVERSE POLARITY SUFFIX "E" MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT SYMBOL MUR1605N MUR1610N MUR1620N MUR1630N MUR1640N MUR1605D MUR1610D MUR1620D MUR1630D MUR1640D MUR1660D MUR1605E MUR1610E MUR1620E MUR1630E MUR1640E MUR1660E MUR1660N UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V Maximum Average Forward Rectified 16.0 IF(AV) o Current TC=100 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 175 VF 0.98 150 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR uA 250 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 90 Operating Junction and Storage Temperature Range V 10.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to + 150 pF o CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MUR1605 thru MUR1660 ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 13 10 8 6 4 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1000 MUR1605-MUR1620 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 MUR1630-MUR1640 1.0 MUR1660 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/