200V-600V Fast Silicon Mesa SMD Rectifier D D D D D D 1.5A Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable Absolute Maximum Ratings Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type BYG20D BYG20G BYG20J tp=10ms, half sinewave Symbol VR=VRRM VR=VRRM VR=VRRM IFSM Value 200 400 600 30 Unit V V V A IFAV Tj=Tstg 1.5 –55...+150 A °C ER 20 mJ I(BR)R=1A, Tj=25°C Maximum Thermal Resistance Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Electrical Characteristics Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100°C IF=0.5A, IR=1A, iR=0.25A 1 of 2 Type Symbol VF VF IR IR trr Min Typ Max 1.3 1.4 1 10 75 Unit V V mA mA ns BYG20D THRU BYG20J 200V-600V Fast Silicon Mesa SMD Rectifier RATINGS AND CHARACTERISTIC CURVES BYG20D THRU BYG20J 100 IF – Forward Current ( A ) 100 I R – Reverse Current ( mA ) 1.5A 10 1 0.1 10 Tj = 125°C 1 Tj = 75°C 0.1 VR = VR RM Tj = 25°C 0.01 0.01 0 40 80 120 160 200 0 Tj – Junction Temperature ( °C ) 94 9341 1 4 3 VF – Forward Voltage ( V ) 94 9342 Figure 1. Typ. Reverse Current vs. Junction Temperature 2 Figure 3. Max. Forward Current vs. Forward Voltage I FAV– Average Forward Current ( A ) 600 trr – Reverse Recovery Time ( ns ) 2.0 1.6 1.2 RthJA=25K/W 100K/W 0.8 125K/W 0.4 400 0 40 80 100°C 75°C 50°C 200 100 25°C 0 120 160 200 0 Tamb – Ambient Temperature ( °C ) 94 9340 Tamb= 125°C 300 150K/W 0 94 9343 Figure 2. Max. Average Forward Current vs. Ambient Temperature Z thp – Thermal Resistance for Pulse Cond. (K/W) IR=0.5A, iR=0.125A 500 0.2 0.4 0.6 0.8 1.0 IF – Forward Current ( A ) Figure 4. Max. Reverse Recovery Time vs. Forward Current 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10–5 94 9339 10–4 10–3 10–2 10–1 100 101 102 tp – Pulse Length ( s ) Figure 5. Thermal Response E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com