TAYCHIPST BYG21K

BYG21K THRU BYG21M
800V-1000V
Fast Silicon Mesa SMD Rectifier
1.5A
FEATURES
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG21K
BYG21M
tp=10ms,
half sinewave
I(BR)R=1A, Tj=25°C
Symbol
VR=VRRM
VR=VRRM
IFSM
Value
800
1000
30
Unit
V
V
A
IFAV
Tj=Tstg
1.5
–55...+150
A
°C
ER
20
mJ
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
TL=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
IF=1A
IF=1.5A
VR=VRRM
VR=VRRM, Tj=100°C
IF=0.5A, IR=1A, iR=0.25A
E-mail: [email protected]
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Type
Symbol
VF
VF
IR
IR
trr
Min
Typ
Max
1.5
1.6
1
10
120
Unit
V
V
mA
mA
ns
Web Site: www.taychipst.com
BYG20D THRU BYG20J
200V-600V
Fast Silicon Mesa SMD Rectifier
RATINGS AND CHARACTERISTIC CURVES
BYG20D THRU BYG20J
100
IF – Forward Current ( A )
100
I R – Reverse Current ( mA )
1.5A
10
1
VR = VR RM
0.1
10
75°C
1
25°C
Tj = 125°C
0.1
0.01
0.01
0
40
80
120
160
200
0
Tj – Junction Temperature ( °C )
94 9347
1
Figure 1. Typ. Reverse Current vs. Junction Temperature
2
4
3
VF – Forward Voltage ( V )
94 9348
Figure 3. Typ. Forward Current vs. Forward Voltage
I FAV– Average Forward Current ( A )
600
trr – Reverse Recovery Time ( ns )
2.0
1.6
RthJA=25K/W
1.2
0.8
100K/W
125K/W
0.4
Tamb= 125°C
500
100°C
400
75°C
50°C
300
25°C
200
100
150K/W
IR=0.5A, iR=0.125A
0
0
0
40
80
120
160
200
0
Tamb – Ambient Temperature ( °C )
94 9345
94 9349
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0.2
0.4
0.6
0.8
1.0
IF – Forward Current ( A )
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
1000
125K/W DC
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
Single Pulse
tp/T=0.01
1
10–5
10–4
94 9339
10–3
10–2
10–1
100
101
102
tp – Pulse Length ( s )
Figure 6. Thermal Response
E-mail: [email protected]
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Web Site: www.taychipst.com