Standard LDO Regulators Standard Fixed Output LDO Regulators BD80C0AFPS,BD90C0AFPS No.10021EAT02 ●Description The BD80C0AFPS, BD90C0AFPS is low-saturation regulator. This IC has a built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits and a thermal shutdown circuit that protects the IC from thermal damage due to overloading. ●Features 1) Output Current: 1A 2) Output Voltage: 8.0V / 9.0V 3) High Output Voltage Precision: ±1% 4) Low saturation with PDMOS output 5) Built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits 6) Built-in thermal shutdown circuit for protecting the IC from thermal damage due to overloading 7) Low ESR Capacitor 8) TO252S-3 packaging ●Applications Audiovisual equipments, FPDs, televisions, personal computers or any other consumer device ●Absolute maximum ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply Voltage *1 VCC -0.3 ~ +35.0 V Power Dissipation *2 Pd 1.2 W Operating Temperature Range Topr -40 ~ +105 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ Tjmax +150 ℃ Maximum Junction Temperature *1 Not to exceed Pd. *2 TO252S-3:Reduced by 9.6mW / °C over Ta = 25°C, when mounted on glass epoxy board: 70mm×70mm×1.6mm. NOTE: This product is not designed for protection against radioactive rays. ●Operating conditions (Ta=25℃) ■BD80C0AFPS Parameter Symbol Min. Max. Unit Supply Voltage VCC 9.0 25.0 V Output Current Io 0 1.0 A Symbol Min. Max. Unit Supply Voltage Vcc 10.0 25.0 V Output Current Io 0 1.0 A ■BD90C0AFPS Parameter www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 1/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Electrical characteristics ■BD80C0AFPS (Unless otherwise specified, Ta=25℃, Vcc=13V, Io=0mA) Parameter Symbol Min Typ Max Unit Bias Current Ib － 0.6 1.0 mA Output Voltage Vo 7.92 8.00 8.08 V Io=500mA Dropout Voltage ΔVd － 0.3 0.5 V VCC=Vo×0.95, Io=500mA Ripple Rejection R.R. 40 50 － dB *1 f=120Hz,ein =1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV VCC=9→25V Load Regulation Reg.L － V Io=5mA→1A Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40 ~ -20℃ Tcvo.2 － ±0.005 － %/℃ Io=5mA,Tj=-20 ~ +105℃ Temperature Coefficient of Output Voltage *1 Vo×0.010 Vo×0.015 Conditions ein: Input Voltage Ripple ■BD90C0AFPS (Unless otherwise specified, Ta=25℃, Vcc=14V, Io=0mA) Parameter Symbol Min Typ Max Unit Bias Current Ib － 0.6 1.0 mA Output Voltage Vo 8.91 9.00 9.09 V Io=500mA Dropout Voltage ΔVd － 0.3 0.5 V VCC=Vo×0.95, Io=500mA Ripple Rejection R.R. 40 50 － dB f=120Hz,ein*1=1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV VCC=10→25V Load Regulation Reg.L － Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40 ~ -20℃ Tcvo.2 － ±0.005 － %/℃ Io=5mA,Tj=-20 ~ +105℃ Temperature Coefficient of Output Voltage *1 Vo×0.010 Vo×0.015 V Conditions Io=5mA→1A ein: Input Voltage Ripple www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 2/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Electrical characteristic curves (Reference data) BD80C0AFPS(Unless otherwise specified, Ta=25℃, Vcc=13V, Io=0mA) 0.6 0.4 0.2 10 10 9 9 8 8 OUTPUT VOLTAGE: Vo [V] 0.8 OUTPUT VOLTAGE: Vo [V] CIRCUIT CURRENT: Ib[mA] 1.0 7 6 5 4 3 2 7 6 5 4 3 2 1 1 0 0 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] SUPPLY VOLTAGE: Vcc [V] Fig.2 Line Regulation (Io=0mA) Fig.3 Line Regulation (Io=500mA) SUPPLY VOLTAGE: Vcc [V] Fig.1 Circuit Current 10 8 7 6 5 4 3 2 1 0 RIPPLE REJECTION : R.R. [dB] DROPOUT VOLTAGE : Δ Vd [mV] OUTPUT VOLTAGE : Vo [V] 80 600 9 500 400 300 200 100 70 60 50 40 30 20 10 0 0 400 800 1200 1600 2000 0 0 OUTPUT CURRENT: IO[mA] 200 400 600 800 OUTPUT CURRENT: IO [mA] 10 1000 Fig.5 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) Fig.4 Load Regulation 10 10 1.0 9 7 6 5 4 3 2 0.8 OUTPUT VOLTAGE: Vo [V] 8 CIRCUI T CURRENT: Ib[mA] OUTPUT VOLTAGE: Vo [V] 1000 10000 100000 1000000 FREQUENCY: f [Hz] Fig.6 Ripple Rejection (Io =100mA) 9 0.6 0.4 0.2 1 0 -40 100 8 7 6 5 4 3 2 1 0.0 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE: Ta[℃] Fig.7 Output Voltage Temperature Characteristics www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 0 200 400 600 800 OUTPUT CURRENT: Io [mA] Fig.8 Circuit Current (lo=0mA→1000 mA) 3/12 1000 0 130 140 150 160 170 180 190 AMBIENT TEMPERATURE: Ta [℃] Fig.9 Thermal Shutdown Circuit Characteristics 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Electrical characteristic curves (Reference data) BD90C0AFPS(Unless otherwise specified, Ta=25℃, Vcc=14V, Io=0mA) 0.6 0.4 0.2 10 10 9 9 8 8 OUTPUT VOLTAGE : Vo [V] 0.8 OUTPUT VOLTAGE: Vo [V] CIRCUIT CURRENT: Ib[mA] 1.0 7 6 5 4 3 2 Fig.12 Line Regulation (Io=500mA) 80 7 6 5 4 3 2 1 0 500 RIPPLE REJECTION: R.R. [dB] DROPOUT VOLTAGE: ΔVd [mV] OUTPUT VOLTAGE: Vo [V] 8 400 300 200 100 1600 2000 0 OUTPUT CURRENT: IO[mA] Fig.13 Load Regulation 200 400 600 800 OUTPUT CURRENT: [mA] 50 40 30 20 10 10 1000 100 1000 10000 100000 1000000 FREQUENCY: f [Hz] Fig.15 Ripple Rejection (Io=100mA) 1.0 10 9 9 8 7 6 5 4 3 2 0.8 OUTPUT VOLTAGE : Vo [V] CIRCUIT CURRENT: Ib[mA] OUTPUT VOLTAGE : Vo [V] 60 Fig.14 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) 10 0.6 0.4 0.2 1 0 -40 70 0 0 1200 2 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] 600 9 800 3 Fig.11 Line Regulation (Io=0mA) 10 400 4 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] Fig.10 Circuit Current 0 5 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] 6 1 1 0.0 7 8 7 6 5 4 3 2 1 0.0 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE: Ta[℃] Fig.16 Output Voltage Temperature Characteristics www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 0 200 400 600 800 OUTPUT CURRENT: Io [mA] Fig.17 Circuit Current (lo=0mA→1000 mA) 4/12 1000 0 130 140 150 160 170 180 AMBIENT TEMPERATURE: Ta [℃] 190 Fig.18 Thermal Shutdown Circuit Characteristics 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●BD80C0AFPS, BD90C0AFPS A Measurement Circuit for Reference Data Vo Vcc 1µF 1µF Vo Vcc 1µF 1µF GND GND Vo Vcc 1µF 1µF V V GND 500mA Measurement Circuit of Fig.1 and Fig.10 Measurement Circuit of Fig.2 and Fig.11 Measurement Circuit of Fig.3 and Fig.12 V Vo Vcc 1µF 1µF Vo Vcc A 1µF 1µF GND Vo Vcc A GND 1Vrms ～ 1µF 1µF GND 100mA Measurement Circuit of Fig.4 and Fig.13 Measurement Circuit of Fig.5 and Fig.14 Vo Vcc GND Vo Vcc 1µF 1µF Vo Vcc 1µF 1µF V Measurement Circuit of Fig.6 and Fig.15 GND 1µF 1µF GND V A Measurement Circuit of Fig.7 and Fig.16 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Measurement Circuit of Fig.8 and Fig.17 5/12 Measurement Circuit of Fig.9 and Fig.18 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●BD80C0AFPS, BD90C0AFPS Block diagrams GND FIN VREF VREF： Bandgap Reference OCP： Over Current Protection Circuit TSD： Thermal Shut Down Circuit Driver： Power Transistor Driver Driver OCP TSD 1 2 3 Vcc N.C. Vo Fig.19 Pin No.. Pin Name Function 1 Vcc Power Supply Pin 2 N.C. N.C. Pin 3 Vo FIN GND Output Pin GND ●Package dimensions ●Input / Output Equivalent Circuit Diagrams Vcc Pin Vo Pin Vcc 20kΩ Vcc IC Circuit Vo 48.3kΩ(80) 55kΩ(90) 5kΩ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 6/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Thermal Design 5 5 Mounted on a Rohm standard board Board size : 70mm×70 mm×1.6 mm Copper foil area :7mm×7mm TO252-3θja=104.2(℃/W) 4 Mounted on a Rohm standard board Board size : 70mm×70 mm×1.6 mm Copper foil area :7mm×7mm ③ 4.80 ①2-layer board (back surface copper foil area :15mm×15mm) ②2-layer board (back surface copper foil area :70mm×70mm) ③4-layer board (back surface copper foil area :70mm×70mm)) ①:θja=67.6℃/W ②:θja=35.7℃/W ③:θja=26.0℃/W 4 Power Dissipation: Pd (W) Power Dissipation: Pd (W) ② 3.50 3 2 1.20 1 3 ① 1.85 2 1 0 0 0 25 50 75 100 125 150 0 25 Ambient Temperature: Ta(℃) 50 75 100 125 150 Ambient Temperature: Ta(℃) Fig.20 Fig.21(reference data) When using at temperatures over Ta=25℃, please refer to the heat reducing characteristics shown in Fig.20 and Fig.21. The IC characteristics are closely related to the temperature at which the IC is used, so it is necessary to operate the IC at temperatures less than the maximum junction temperature Tjmax. Fig.20 and Fig.21 shows the acceptable loss and heat reducing characteristics of the TO252S-3 package. Even when the ambient temperature Ta is a normal temperature (25℃), the chip (junction) temperature Tj may be quite high so please operate the IC at temperatures less than the acceptable loss Pd. The calculation method for power consumption Pc(W) is as follows :(Fig.21③) Pc=(Vcc－Vo)×Io+Vcc×Ib Acceptable loss Pd≧Pc Solving this for load current Io in order to operate within the acceptable loss, Io≦ Pd－Vcc×Ib Vcc－Vo Vcc: Vo: Io: Ib: Ishort: Input voltage Output voltage Load current Circuit current Short current (Please refer to Fig.8,Fig.17 for Ib.) It is then possible to find the maximum load current IoMax with respect to the applied voltage Vcc at the time of thermal design. Calculation Example for BD80C0AFPS) When Ta=85℃, Vcc=13V, Vo=8V Io≦ 2.496－13×Ib 5 Io≦497.6mA Fig.21③ :θja=26.0℃/W → -38.4mW/℃ 25℃=4.80W → 85℃=2.496W (Ib: 0.6 mA) Please refer to the above information and keep thermal designs within the scope of acceptable loss for all operating temperature ranges. The power consumption Pc of the IC when there is a short circuit (short between Vo and GND) is : Pc=Vcc×(Ib + Ishort) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. (Please refer to Fig.4,Fig.13 for Ishort.) 7/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Notes for use 1. Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics. 3. GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins are at a voltage below the GND at any time, regardless of transient characteristics. 4. Ground wiring pattern When using both small-signal and large-current GND traces, the two ground traces should be routed separately but connected to a single ground potential within the application in order to avoid variations in the small-signal ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance. 5. Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by poor soldering or foreign objects) may result in damage to the IC. 6. Operation in strong electromagnetic fields Using this product in strong electromagnetic fields may cause IC malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 7. Testing on application boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from a jig or fixture during the evaluation process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Thermal consideration Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc) Tjmax: Maximum junction temperature=150℃, Ta: Peripheral temperature[℃] , θja: Thermal resistance of package-ambience[℃/W], Pd: Package Power dissipation [W] Pc: Power dissipation [W], Vcc: Input Voltage, Vo: Output Voltage, Io: Load, Ib: Bias Current 9. Vcc pin Insert a capacitor(capacitor≧1µF ~ ) between the Vcc and GND pins. application. Be sure to allow a sufficient margin for input voltage levels. The appropriate capacitance value varies by Electric capacitance IC Ceramic capacitors,Low ESR capacitors www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 8/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS 10. Output pins It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output. Usable capacitance values range from 1µF to 1000µF. Ceramic capacitors can be used as long as their ESR value is low enough to prevent oscillation (0.001Ω to 20Ω). Abrupt fluctuations in input voltage and load conditions may affect the output voltage. Output capacitance values should be determined only through sufficient testing of the actual application. Vcc=9V～25V(BD80C0AFPS) Vcc=10V～25V(BD90C0AFPS) Ta=-40℃～+105℃ Cin=1µF～100µF Cout=1µF～100µF Vcc=9V～25V(BD80C0AFPS) Vcc=10V～25V(BD90C0AFPS) Ta=-40℃～+105℃ Cin=1µF～100µF Cout=1µF～100µF Io=0A～1A 100 Unstable operating region 100 1 Stable operating region Cin（μF） Cout_ESR(Ω） 10 0.1 Stable operating region 10 0.01 1 0.001 0 200 400 600 800 1 1000 10 100 Cout（μF） Io(mA) Cout_ESR vs Io(reference data) Cin vs Cout(reference data) Cout(1µF~ ) ESR (0.001Ω~ ) Vcc Vcc Vo Cin (1µF~ ) GND Io(ROUT) ※Operation Notes10 Measurement circuit 11. For a steep change of the Vcc voltage Because MOS for output Transistor is used when an input voltage change is very steep, it may evoke large current. When selecting the value of external circuit constants, please make sure that the operation on the actual application takes these conditions into account. 12. For an infinitesimal fluctuations of output voltage. At the use of the application that infinitesimal fluctuations of output voltage caused by some factors (e.g. disturbance noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g. insert the filter, etc.). 13. Over current protection circuit (OCP) The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous or transitive operation of the protection circuits. 14. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used after this function has activated, or in applications where the operation of this circuit is assumed. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 9/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS 15. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert bypass diodes between Vcc and each pin. 16. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on the VCC pin. Vcc GND 17. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin. Vcc GND 18. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. protection diode should be inserted on the output to protect the IC. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 10/12 In such cases, a 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS 19. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): ○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode ○When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Transistor (NPN) Resistor (Pin B) (Pin A) (Pin B) B C E B P+ N P N P+ P N GND P+ N N Parasitic elements GND E P P+ N Parasitic elements or transistors N P substrate Parasitic elements or transistors C GND (Pin A) Parasitic elements Example of Simple Monolithic IC Architecture www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 11/12 2010.11 - Rev.A Technical Note BD80C0AFPS,BD90C0AFPS ●Ordering part number B D ROHM model Name 8 0 Output Voltage 80:8V Output 90:9V Output www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. C 0 Current capacity C0A:1A A F P Package FPS:TO252S-3 12/12 S - E 2 Packaging specification E2: Embossed tape and reel 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 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