ROHM BA3258HFP_11

Secondary LDO Regulators
Dual Output
Secondary Fixed Output LDO Regulators
BA3258HFP, BA33D15HFP, BA33D18HFP
No.11026EBT01
●Description
The BA3258HFP, BA33D15HFP, BA33D18HFP are fixed 2-output low-saturation regulators with a voltage accuracy at both
outputs of 2%. These series incorporate both overcurrent protection and thermal shutdown (TSD) circuits in order to
prevent damage due to output short-circuiting and overloading, respectively.
●Features
1) Output voltage accuracy: 2%.
2) Output current capacity: 1A (BA3258HFP), 0.5A (BA33D□□ Series)
3) A ceramic capacitor can be used to prevent output oscillation (BA3258HFP).
4) High Ripple Rejection (BA33D□□ Series)
5) Built-in thermal shutdown circuit
6) Built-in overcurrent protection circuit
●Applications
FPDs, TVs, PCs, DSPs in DVDs and CDs
●Product Lineup
Output voltage
Vo1
Output voltage
Vo2
Current capability
Io1
Current capability
Io2
Package
BA3258HFP
3.3 V
1.5 V
1A
1A
HRP5
BA33D15HFP
3.3 V
1.5 V
0.5 A
0.5 A
HRP5
BA33D18HFP
3.3 V
1.8 V
0.5 A
0.5 A
HRP5
Part Number
●Absolute Maximum Ratings
BA3258HFP
BA33D□□ Series
Symbol
Ratings
Unit
Applied voltage
VCC
15*1
V
Power dissipation
Pd
2300*2
mW
Topr
−30 to 85
℃
Tstg
−55 to 150
℃
Tjmax
150
℃
Parameter
Operating
temperature range
Ambient storage
temperature
Maximum junction
temperature
Symbol
Ratings
Unit
Applied voltage
VCC
18*1
V
Power dissipation
Pd
2300*2
mW
Topr
−25 to 105
℃
Tstg
−55 to 150
℃
Tjmax
150
℃
Parameter
Operating
temperature range
Ambient storage
temperature
Maximum junction
temperature
*1 Must not exceed Pd
*2. Derated at 18.4 mW/℃ at Ta>25℃ when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm)
●Recommended Operating Conditions
BA3258HFP
Parameter
BA33D□□Series
Ratings
Symbol
Min. Typ. Max.
Unit
Parameter
Symbol
Min.
Ratings
Typ. Max.
Unit
Input power supply
voltage
VCC
4.75
-
14.0
V
Input power supply
voltage
VCC
4.1
-
16.0
V
3.3 V output current
Io1
-
-
1
A
3.3 V output current
Io1
-
-
0.5
A
1.5 V output current
Io2
-
-
1
A
1.5V output current
Io2
-
-
0.5
A
1.8 V output current
Io2
-
-
0.5
A
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1/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Electrical Characteristics
BA3258HFP (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)
Parameter
Symbol
Bias current
IB
Limits
Min.
-
Typ. Max.
3
5
Unit
mA
Conditions
Io1 = 0 mA, Io2 = 0 mA
[3.3 V Output Block]
Output voltage1
Vo1
Minimum output voltage difference 1
Output current capacity 1
3.234 3.300 3.366
∆Vd1
-
1.1
1.3
V
Io1 = 50 mA
V
Io1 = 1 A, Vcc = 3.8 V
Io1
1.0
-
-
A
Ripple rejection 1
R.R.1
46
52
-
dB
f=120 Hz,ein=0.5Vp-p,Io1=5mA
Input stability 1
Reg.I1
-
5
15
mV
Vcc = 4.75→14 V, Io1 = 5 mA
Load stability 1
Reg.L1
-
5
20
mV
Io1 = 5 mA→1A
Tcvo1
-
0.01
-
Temperature coefficient of output voltage 1*3
%/℃ Io1 = 5 mA, Tj = 0℃ to 85℃
[1.5 V Output Block]
Output voltage 2
Vo2
Output current capacity 2
Io2
1.0
-
Ripple rejection 2
R.R.2
46
52
-
dB
f=120 Hz,ein=0.5Vp-p,Io2=5mA
Input stability 2
Reg.I2
-
5
15
mV
Vcc = 4.1→14 V, Io2 = 5 mA
Load stability 2
Reg.L2
-
5
20
mV
Io2 = 5 mA→1 A
Tcvo2
-
0.01
-
Temperature coefficient of output voltage 2*3
1.470 1.500 1.530
-
V
Io2 = 50 mA
A
%/℃ Io2 = 5 mA, Tj = 0℃ to 125℃
*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)
BA33D□□ Series (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)
Limits
Parameter
Symbol
Min. Typ. Max.
Bias current
Ib
-
0.7
1.6
Unit
mA
Conditions
Io1 = 0 mA, Io2 = 0 mA
[3.3V Output Block]
Output voltage 1
Vo1
Minimum output voltage difference 1
Output current capacity 1
Ripple rejection 1
3.234 3.300 3.366
V
Io1 = 250 mA
0.25
V
Io1 = 250 mA, Vcc = 3.135 V
∆Vd1
－
0.50
Io1
0.5
-
-
A
R.R.1
-
68
-
dB
f=120 Hz,ein =1Vp-p,Io1=100mA
Input stability 1
Reg.I1
-
5
30
mV
Vcc=4.1V→16V,Io1=250mA
Load stability 1
Reg.L1
-
30
75
mV
Io1= 0 mA→0.5 A
Tcvo1
-
0.01
-
Temperature coefficient of output voltage 1*3
BA33D15HFP Vo2 output
[1.5V Output Block]
Output voltage 2
Vo2
Output current capacity 2
Io2
0.5
-
Ripple rejection 2
R.R.2
-
74
-
dB
f=120 Hz,ein=1Vp-p,Io2=100mA
Input stability 2
Reg.I2
-
5
30
mV
Vcc =4.1V→16 V,Io2=250mA
Reg.L2
-
30
75
mV
Io2 = 0 mA→0.5A
Tcvo2
-
0.01
-
Load stability 2
*3
Temperature coefficient of output voltage 2
BA33D18HFP Vo2 output
[1.8V Output Block]
1.470 1.500 1.530
%/℃ Io1 = 5 mA, Tj=0℃ to 125℃
-
Io2 = 250 mA
A
%/℃ Io2 = 5 mA,Tj = 0℃ to 125℃
Output voltage 2
Vo2
Output current capacity 2
Io2
0.5
-
Ripple rejection 2
R.R.2
-
72
-
dB
f =120Hz,ein =1Vp-p,Io2=100mA
Input stability 2
Reg.I2
-
5
30
mV
Vcc = 4.1V→16V,Io2=250mA
Load stability 2
Reg.L2
-
30
75
mV
Io2 = 0 mA→0.5 A
Tcvo2
-
0.01
-
Temperature coefficient of output voltage 2*3
1.764 1.800 1.836
V
-
V
Io2=250 mA
A
%/℃ Io2 = 5 mA, Tj = 0℃ to 125℃
*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)
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2/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●BA3258HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)
5
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
CIRCUIT CURRENT：IB［mA］
3.5
CIRCUIT CURRENT：IB［mA］
CIRCUIT CURRENT：Icc［mA］
4.0
4
3
2
1
0
14
0.2
0.4
0.6
0.8
1
1.0
0.0
4.0
3.5
1.4
3.5
2.0
1.5
1.0
1.2
1.0
0.8
0.6
0.4
0.5
0.2
0.0
0.0
0
2
4
6
8
10
12
SUPPLY VOLTAGE：Vcc［V］
OUTPUT VOLTAGE：Vo1［V］
1.6
2.5
2.5
2.0
1.5
1.0
2
4
6
8
10
12
14
0.0
1.4
1.2
70
INPUT /OUTPUT
0.6
0.4
0.2
RIPPLE REJECTION ：R.R.［dB］
80
VOLTAGE DIFFERENCE:ΔVd [V]
1.4
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.0
0.5
1.0
1.5
2.0
OUTPUT CURRENT：Io2［A］
Fig. 7 Load Stability
60
40
20
10
0.2
0.4
0.6
0.8
OUTPUT CURRENT：Io1［A］
1.0
10
5.0
3.295
3.285
3.275
3.265
1.500
1.498
1.496
1.494
3.255
1.492
3.245
1.490
0
15 30 45 60
TEMPERATURE：Ta［℃］
75
Fig. 10 Output Voltage vs Temperature
(3.3 V output)
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CIRCUIT CURRENT：IB［mA］
3.315
OUTPUT VOLTAGE：Vo2［V］
5.5
1.504
1.502
-30
-15
0
15 30 45 60
TEMPERATURE：Ta［℃］
75
Fig. 11 Output Voltage vs Temperature
(1.5 V output)
3/8
100
1000
FREQUENCY：f［Hz］
10000
Fig. 9 R.R. Characteristics
(ein = 0.5 Vp-p, Io = 5 mA)
1.506
-15
R.R.(3.3 V output)
30
3.325
-30
R.R.(1.5 V output)
50
Fig. 8 I/O Voltage Difference (3.3 V output)
(Vcc = 3.8 V, Io1 = 0  1 A)
3.305
2.5
0
0.0
2.5
0.5
1.0
1.5
2.0
OUTPUT CURRENT：Io1［A］
Fig. 6 Load Stability
(3.3 V output)
Fig. 5 Input Stability
(1.5 V output with no load)
1.6
0.8
1.0
0.0
Fig. 4 Input Stability
(3.3 V output with no load)
1.0
0.8
3.0
SUPPLY VOLTAGE：Vcc［V］
1.2
0.6
0.5
0
14
0.4
Fig. 3 Circuit Current vs Load Current Io2
(Io2 = 0  1 A)
4.0
3.0
0.2
OUTPUT CURRENT：Io2［A］
Fig. 2 Circuit Current vs Load Current Io2
(Io1 = 0 1 A)
OUTPUT VOLTAGE：Vo2［V］
OUTPUT VOLTAGE：Vo1［V］
2
OUTPUT CURRENT：Io1［A］
Fig.1 Circuit Current
(with no load)
OUTPUT VOLTAGE：Vo2［V］
3
0
0.0
SUPPLY VOLTAGE：Vcc［V］
OUTPUT VOLTAGE：Vo1［V］
4
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-30
-15
0
15
30
45
60
75
TEMPERATURE：Ta［℃］
Fig. 12 Circuit Current vs Temperature
(Io = 0 mA)
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
40
40
1.2
35
35
1.0
0.8
0.6
0.4
0.2
0.0
2
4 6
8 10 12 14 16
SUPPLY VOLTAGE：Vcc［V］
25
20
15
10
5
18
25
20
15
10
5
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
4.0
3.5
1.4
3.5
3.0
2.5
2.0
1.5
1.0
OUTPUT VOLTAGE：VOUT［V］
1.6
OUTPUT VOLTAGE：Vo2［V］
4.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
2
4 6
8 10 12 14 16
SUPPLY VOLTAGE：Vcc［V］
0
2
4
6
8 10 12 14 16
SUPPLY VOLTAGE：Vcc［V］
1.0
0.8
0.6
0.4
0.2
0.0
0.3
0.2
0.1
0.1
0.2
0.3
0.4
3.25
3.20
65
80
95
TEMPERATURE：Ta［℃］
Fig. 22 Output Voltage vs Temperature
(3.3 V output)
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1.0
1.2
1.4
Vo1(3.3V output)
40
30
20
10
1000
FREQUENCY：f［Hz］
10000
Fig. 21 R.R. Characteristics
(ein = 1 Vp-p, Io = 100 mA)
1050
1.55
1.50
1.45
1.40
3.15
0.8
50
100
0.5
CIRCUIT CURRENT：Icc［mA］
3.30
0.6
60
OUTPUT CURRENT：Io1［A］
OUTPUT VOLTAGE：Vo2［V］
3.35
0.4
Vo2(1.5V output)
70
Fig. 20 I/O Voltage Difference
(Vcc = 3.135 V, 3.3 V output)
3.40
0.2
Fig. 18 Load Stability
(3.3 V output)
1.60
50
0.5
0
0.0
1.6
3.45
35
1.0
80
0.4
Fig. 19 Load Stability
(1.5 V output)
20
1.5
OUTPUT CURRENT：Io1［A］
0.0
5
2.0
0.0
RIPPLE REJECTION：R.R.［dB］
ΔVd［V］
INPUT/OUTPUT
1.2
VOLTAGE DIFFERENCE：
1.4
-25 -10
2.5
18
0.5
0.4 0.6 0.8 1.0 1.2 1.4
OUTPUT CURRENT：Io1［A］
3.0
Fig. 17 Input Stability
(1.5 V output, Io2 = 250 mA)
1.6
0.2
0.5
0.0
18
Fig. 16 Input Stability
(3.3 V output, Io1 = 250 mA）
0.0
0.1
0.2
0.3
0.4
OUTPUT CURRENT：Io2［A］
Fig. 14 Circuit Current vs Load Current Io1 Fig. 15 Circuit Current vs Load Current Io2
(Io2 = 0  500 mA)
(Io1 = 0  500 mA)
0.5
OUTPUT VOLTAGE：VOUT ［V］
30
OUTPUT CURRENT：Io1［A］
Fig. 13 Circuit Current
(with no load)
OUTPUT VOLTAGE：Vo1［V］
30
0
0
OUTPUT VOLTAGE：Vo1［V］
CIRCUIT CURRENT：Icc［mA］
1.4
CIRCUIT CURRENT：Icc［mA］
CIRCUIT CURRENT：Icc［mA］
●BA33D15HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)
950
850
750
650
550
450
350
250
-25 -10
5
20
35
50
65
80
95
TEMPERATURE：Ta［℃］
15
35
55
75
TEMPERATURE：Ta［℃］
Fig. 23 Output Voltage vs Temperature
(1.5 V output)
Fig. 24 Circuit Current vs Temperature
(Io = 0 mA)
4/8
-25
-5
95
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Block Diagrams / Standard Example Application Circuits
BA3258HFP
VO1
5
Current
Limit
3.3V
Pin No.
Pin name
1
Vcc
2
V02_S
Output voltage monitor pin
3
GND
GND pin
4
Vo2
1.5 V output pin
5
Vo1
3.3 V output pin
FIN
GND
GND pin
CO1
1μF
VO2
4
Current
Limit
GND
GND
3
Thermal
Shutdown
FIN
1.5V
CO2
1μF
2
V02_S
Vcc
1
VREF
CIN
3.3μF
Fig.25 BA3258HFP Block Diagram
Power supply pin
TOP VIEW
External capacitor
setting range
PIN
VIN
Function
Vcc (1 Pin)
Approximately 3.3µF
Vo1 (5 Pin)
1µF to 1000µF
Vo2 (4 Pin)
1µF to 1000µF
1
2
3
HRP5
4
5
BA33D□□Series
GND(Fin)
Vcc
Vcc
Pin No.
Pin name
1
Vcc
Power supply pin
2
N.C.
N.C. pin
3
GND
GND pin
4
Vo1
3.3 V output pin
Reference
Voltage
Current
Limit
Sat.
Prevention
Vcc
Vcc
1μF
2
N.C.
5
Vo2
1.5 V/1.8 V output pin
FIN
GND
GND pin
*The N.C. pin is not electrically connected internally
TOP VIEW
Thermal
Shut Down
1
Vcc
Function
Current
Limit
GND
3
Sat.
Prevention
Vo1
4
Co
10μF
Vo2
PIN
External capacitor
setting range
Vcc (1 Pin)
Approximately 3.3µF
Vo1 (4 Pin)
10µF to 1000µF
Vo2 (5 Pin)
10µF to 1000µF
5
1
Co
10μF
2
3
HRP5
4
5
Fig.26 BA33D□□ Series Block Diagram
●Input / Output Equivalent Circuits
BA3258HFP
BA33D□□Series
Vcc
Vcc
Vcc
Vo1/Vo2
Vo2
Vo2_S
Vo1
Fig. 27 BA3258HFP Input / Output Equivalent Circuit
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Fig. 28 BA33D□□Series Equivalent Circuit
5/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Thermal Design
If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse
effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature
exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power
dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the
reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.
・Power Consumption (Pc) Calculation Method
IP
Vcc
*Vcc: Applied voltage
Io1: Load current on Vo1 side
Io2: Load current on Vo2 side
Icc: Circuit current
* The Icc (circuit current) varies with the load.
(See reference data in Figs. 2, 3, 14, and 15.)
Vcc
3.3 V output
IO1
・Power consumption of 3.3V power transistor:
Power Tr
Vo1
Pc1 = (Vcc − 3.3)  Io1
Controller
Vcc
・Power consumption of Vo2 power transistor:
I
Vo2
Power Tr
Pc2 = (Vcc − Vo2)  Io2
Icc
1.5 V output or
・Power consumption due to circuit current:
1.8 V output
GND
Pc3 = Vcc  Icc
→Pc = Pc1 + Pc2 + Pc3
Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation
conditions under the entire operating temperature range.
O2
・Calculation example (BA33D15HFP)
Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA
・Power consumption of 3.3V power transistor:
Pc1 = (Vcc − 3.3)  Io1 = (5 − 3.3)  0.2 = 0.34W
・Power consumption of 1.5V power transistor:
Pc2 = (Vcc − 1.5)  Io2 = (5 − 1.5)  0.2 = 0.35W
・Power consumption due to circuit current: Pc3 = Vcc  Icc = 5  0.0085 = 0.0425 (W) (See Figs. 14 and 15)
Implement proper thermal designs taking into consideration the dissipation at full power consumption
(i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W).
●Explanation of External Components
○BA3258HFP
1) Pin 1 (Vcc pin)
Connecting a ceramic capacitor with a capacitance of approximately 3.3F between Vcc and GND as close to the pins
as possible is recommended.
2) Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if
the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic
capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from
temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000µF. (Refer to Fig. 30)
Board size: 70 mm  70  1.6 mm (with a thermal via incorporated by the board)
9
8 (3) 7.3 W
7
6 (2) 5.5 W
5
4
3 (1) 2.3 W
2
1
0
0
25
Board surface area: 10.5 mm  10.5 mm
(1)
2-layer board (Backside copper foil area: 15 mm  15mm)
(2)
2-layer board (Backside copper foil area: 70 mm  70 mm)
10.0
5.0
(3) 4-layer board (Backside copper foil area: 70 mm  70mm)
Unstable
region
不安定領域
2.0
1.0
0.5
0.2
50
75
100
125
150
AMBIENT TEMPERATURE：Ta［℃］
Fig. 29 Thermal Derating Curves
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0
200
400 600
Io [mA]
800
1000
0.02
0.01
Fig. 30 BA3258HFP ESR characteristics
6/8
Unstable
region
不安定領域
Stable
region
安定領域
0.5
0.2
0.15
0.1
0.05
Stable
region
安定領域
0.1
0.05
0.02
0.01
10.0
5.0
4.0
2.0
1.0
ESR [Ω]
10
ESR [Ω]
POWER DISSIPATION：Pd ［W］
○BA33D□□Series
1) Pin 1 (Vcc pin)
Insert a 1F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the
capacitance with the application set and implement designing with a sufficient margin.
2) Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with
temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum
electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is too high or too
low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region. If there is a
sudden load change, use a capacitor with higher capacitance. A capacitance between 10F and 1,000F is
recommended.
Unstable
region
不安定領域
0
200
400 600
Io [mA]
800
1000
Fig. 31 BA33D□□ Series ESR
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Notes for use
1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
3) Thermal Design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
8) Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
9) Thermal Shutdown Circuit (TSD)
This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction
temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output
power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature.
Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded.
Application designs should never make use of the thermal shutdown circuit.
10) Overcurrent protection circuit
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued
use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.
11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of
1000 mF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between
Vcc and each pin is recommended.
Resistor
抵抗
Transistor
(NPN)
トランジスタ(NPN)
（端子A）
A）
（Pin
（端子
（Pin B）
B）
C
B
(Pin B)
C
E
B
～
～
～
～
Diode for preventing back current flow
～
～
Bypass diode
VCC
GND
GND
N
P
P＋
P＋
N
N
Ｎ
N
N
P substrate
P 基板
Ｐ
P
P＋
N
寄生素子
Parasitic
elements
GND
P＋
N
Parasitic elements or
Ｎ
x
transistors
(Pin A)
～
～
Output pin
E
P 基板
Parasitic elements
GND
GND
Fig32 Bypass diode
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig. 33 Example of Simple Bipolar IC Architecture
7/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Ordering part number
B
A
3
Part No.
5
2
8
Part No.
3528
33D15
33D18
H
F
P
-
Package
HFP:HRP5
T
R
Packaging and forming specification
TR: Embossed tape and reel
(HRP5)
HRP5
<Tape and Reel information>
8.82 ± 0.1
(6.5)
0.08±0.05
1.2575
1
2
3
4
0.835±0.2
1.523±0.15
8.0±0.13
(7.49)
1.905±0.1
10.54±0.13
1.017±0.2
9.395±0.125
(MAX 9.745 include BURR)
Tape
Embossed carrier tape
Quantity
2000pcs
Direction
of feed
TR
direction is the 1pin of product is at the upper right when you hold
( The
)
reel on the left hand and you pull out the tape on the right hand
1pin
5
+5.5°
4.5°−4.5°
+0.1
0.27 −0.05
1.72
0.73±0.1
0.08 S
S
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© 2011 ROHM Co., Ltd. All rights reserved.
Direction of feed
Reel
(Unit : mm)
8/8
∗ Order quantity needs to be multiple of the minimum quantity.
2011.03 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
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More detail product informations and catalogs are available, please contact us.
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A