XP152A12C0MR-G ETR1121_003 Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■FEATURES ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN ASSIGNMENT PRODUCTS PACKAGE ORDER UNIT SOT-23 3,000/Reel SOT-23 3,000/Reel XP152A12C0MR G：Gate 2 1 2 x S：Source D：Drain * x represents production lot number. (*) XP152A12C0MR-G (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ ■EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss -20 V Gate - Source Voltage Vgss ±12 V Drain Current (DC) Id -0.7 A Drain Current (Pulse) Idp -2.8 A Reverse Drain Current Idr -0.7 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ * When implemented on a ceramic PCB 1/5 XP152A12C0MR-G ■ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 μA Gate-Source Leak Current Igss Vgs= ±12V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -0.5 - -1.2 V Drain-Source On-State Resistance *1 Rds(on) Id= -0.4A, Vgs= -4.5V - 0.23 0.30 Ω Id= -0.4A, Vgs= -2.5V - 0.37 0.50 Ω Forward Transfer Admittance *1 | Yfs | Id= -0.4A, Vds= -10V - 1.5 - S Body Drain Diode Forward Voltage Vf If= -0.7A, Vgs= 0V - -0.8 -1.1 V *1 Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds= -10V, Vgs=0V f= 1MHz MIN. TYP. MAX. UNITS - 180 - pF - 120 - pF - 60 - pF Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs= -5V, Id= -0.4A Vdd= -10V MIN. TYP. MAX. UNITS - 5 - ns - 20 - ns - 55 - ns - 70 - ns Thermal Characteristics 2/5 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W XP152A12C0MR-G ■TYPICAL PERFOMANCE CHARACTERISTICS 3/5 XP152A12C0MR-G ■TYPICAL PERFOMANCE CHARACTERISTICS (Continued) 4/5 XP152A12C0MR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 5/5