XP135A1145SR ETR1116_001 Power MOSFET ■GENERAL DESCRIPTION The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ■FEATURES Low On-State Resistance (Nch) : Rds (on) = 0.033Ω@ Vgs = 10V : Rds (on) = 0.045Ω@ Vgs = 4.5V Low On-State Resistance (Pch) : Rds (on) = 0.065Ω@ Vgs = -10V : Rds (on) = 0.110Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : 4.5V (Nch) : -4.5V (Pch) N-Channel/P-channel Power MOSFET DMOS Structure Two FET Devices Built-in Package ■PIN CONFIGURATION : SOP-8 ■PIN ASSIGNMENT PIN NUMBER ■EQUIVALENT CIRCUIT PIN NAME FUNCTION 1 2 3 S1 G1 S2 Source (Nch) 4 5~6 7~8 G2 D2 D1 Gate (Pch) Drain (Pch) Drain (Nch) Gate (Nch) Source (Pch) ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL Drain-Source Voltage RATINGS UNITS Nch Pch Vdss 30 -30 V Gate-Source Voltage Vgss ±20 ±20 V Drain Current (DC) Id 6 -4 A Drain Current (Pulse) Idp 20 -16 A Reverse Drain Current Idr 6 -4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55~150 ℃ * When implemented on a glass epoxy PCB 1/8 XP135A1145SR ■ELECTRICAL CHARACTERISTICS DC Characteristics (N-channel Power MOSFET) Ta = 25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 μA Gate-Source Leak Current Igss Vgs=±20V, Vds= 0V - - ±1 μA Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 2.5 V Drain-Source On-State Resistance *1 Rds(on) Id= 3A, Vgs= 10V - 0.026 0.033 Ω Id= 3A, Vgs= 4.5V - 0.035 0.045 Ω Forward Transfer Admittance *1 | Yfs | Id= 3A, Vds= 10V - 12 - S Body Drain Diode Forward Voltage Vf If= 6A, Vgs= 0V - 0.85 1.1 V *1 Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds= 10V, Vgs=0V f= 1MHz MIN. TYP. MAX. UNITS - 620 - pF - 350 - pF - 120 - pF Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs= 5V, Id= 3A Vdd= 10V MIN. TYP. MAX. UNITS - 15 - ns - 20 - ns - 30 - ns - 10 - ns Thermal Characteristics 2/8 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a glass epoxy resin PCB - 62.5 - ℃/W XP135A1145SR ■ELECTRICAL CHARACTERISTICS (Continued) DC Characteristics (P-channel Power MOSFET) Ta = 25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= -30V, Vgs= 0V - - -10 μA Gate-Source Leak Current Igss Vgs=±20V, Vds= 0V - - ±1 μA Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -1.0 - -2.5 V Drain-Source On-state Resistance *1 Rds(on) Forward Transfer Admittance *1 Body Drain Diode Forward Voltage Id= -2A, Vgs= -10V - 0.055 0.065 Ω Id= -2A, Vgs= -4.5V - 0.09 0.11 Ω | Yfs | Id= -2A, Vds= -10V - 5 - S Vf If= -4A, Vgs= 0V - -0.85 -1.1 V *1 Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds= -10V, Vgs= 0V f= 1MHz MIN. TYP. MAX. UNITS - 680 - pF - 450 - pF - 170 - pF Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs= -5V, Id= -2A Vdd= -10V MIN. TYP. MAX. UNITS - 15 - ns - 20 - ns - 30 - ns - 20 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a glass epoxy resin PCB - 62.5 - ℃/W 3/8 XP135A1145SR ■TYPICAL PERFORMANCE CHARACTERISTICS ●N-channel Power MOSFET 4/8 XP135A1145SR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ●N-channel Power MOSFET(Continued) 4A 5/8 XP135A1145SR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ●P-channel Power MOSFET 6/8 XP135A1145SR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ●P-channel Power MOSFET(Continued) Vds ＝10V ,Id ＝4A ,Ta ＝25 ℃ (11) Standardized transition Thermal Resistance vs. Pulse Width 7/8 XP135A1145SR 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this catalog is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this catalog. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. The products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this catalog within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. 8/8