Product specification XP151A11B0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ■FEATURES ●Notebook PCs ●Li-ion battery systems Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PRODUCT NAMES ●Cellular and portable phones ●On-board power supplies PRODUCTS PACKAGE ORDER UNIT SOT-23 3,000/Reel SOT-23 3,000/Reel XP151A11B0MR (*) XP151A11B0MR-G 1 1 1 x G：Gate S：Source (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. D：Drain * x represents production lot number. ■EQUIVALENT CIRCUIT ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss ±20 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ * When implemented on a ceramic PCB http://www.twtysemi.com [email protected] 1 of 2 Product specification XP151A11B0MR-G ■ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER Ta = 25℃ SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 μA Gate-Source Leak Current Igss Vgs= ±20V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 3.0 V Id= 0.5A, Vgs= 10V - 0.09 0.12 Ω Id= 0.5A, Vgs= 4.5V - 0.13 0.17 Ω Drain-Source On-State Resistance *1 Rds(on) Forward Transfer Admittance *1 | Yfs | Id= 0.5A, Vds= 10V - 2.4 - S Body Drain Diode Forward Voltage Vf If= 1A, Vgs= 0V - 0.8 1.1 V *1 Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds= 10V, Vgs=0V f=1MHz MIN. TYP. MAX. UNITS - 150 - pF - 90 - pF - 30 - pF MIN. TYP. MAX. UNITS - 10 - ns - 15 - ns - 25 - ns - 45 - ns Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs= 5V, Id= 0.5A Vdd= 10V Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W http://www.twtysemi.com [email protected] 2 of 2