DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 DUAL H-BRIDGE DRIVER IC Check for Samples: DRV8841 FEATURES 1 • 2 • • • • Dual H-Bridge DC Motor Driver – Drives Two DC Motors, One Stepper Motor or Other Loads – Two-Bit Winding Current Control Allows Up to 4 Current Levels – Low MOSFET On-Resistance 2.5-A Maximum Drive Current at 24 V, 25°C Built-In 3.3-V Reference Output Industry-Standard PWM Control Interface 8.2-V to 45-V Operating Supply Voltage Range • Thermally Enhanced Surface Mount Package APPLICATIONS • • • • • • Printers Scanners Office Automation Machines Gaming Machines Factory Automation Robotics DESCRIPTION The DRV8841 provides an integrated motor driver solution for printers, scanners, and other automated equipment applications. The device has two H-bridge drivers, and can be used to drive two DC motors, one stepper motor, or other loads. The output driver block for each consists of N-channel power MOSFET’s configured as H-bridges. The DRV8841 can supply up to 2.5-A peak or 1.75-A RMS output current (with proper heatsinking at 24 V and 25°C) per H-bridge. Separate inputs to independently control each half of the H-bridge are provided. Internal shutdown functions are provided for over current protection, short circuit protection, under voltage lockout and overtemperature. TheDRV8841 is available in a 28-pin HTSSOP package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br). ORDERING INFORMATION (1) TA –40°C to 85°C (1) (2) PACKAGE (2) PowerPAD™ (HTSSOP) - PWP Reel of 2000 ORDERABLE PART NUMBER TOP-SIDE MARKING DRV8841PWPR 8841 For the most current packaging and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010–2013, Texas Instruments Incorporated DRV8841 SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 www.ti.com DEVICE INFORMATION Functional Block Diagram VM VM Internal Reference & Regs 3.3V CP1 Int. VCC LS Gate Drive V3P3OUT 0.01mF CP2 VM Charge Pump VCP 3.3V 0.1mF Thermal Shut down HS Gate Drive 1MW VM AVREF VMA BVREF AOUT1 Motor Driver A AIN1 AIN2 DCM AOUT2 AI0 ISENA AI1 BIN1 BIN2 BI0 Control Logic VM VMB BI1 BOUT1 DECAY Motor Driver B nRESET DCM BOUT2 nSLEEP ISENB nFAULT GND 2 GND Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 Table 1. TERMINAL FUNCTIONS NAME PIN I/O (1) EXTERNAL COMPONENTS OR CONNECTIONS DESCRIPTION POWER AND GROUND GND 14, 28 - Device ground VMA 4 - Bridge A power supply VMB 11 - Bridge B power supply V3P3OUT 15 O 3.3-V regulator output CP1 1 IO Charge pump flying capacitor CP2 2 IO Charge pump flying capacitor VCP 3 IO High-side gate drive voltage Connect a 0.1-μF 16-V ceramic capacitor and a 1-MΩ resistor to VM. AIN1 21 I Bridge A input 1 Logic input controls state of AOUT1. Internal pulldown. AIN2 20 I Bridge A input 2 Logic input controls state of AOUT2. Internal pulldown. AI0 24 I Bridge A current set Sets bridge A current: 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0 Internal pulldown. Connect to motor supply (8.2 - 45 V). Both pins must be connected to same supply. Bypass to GND with a 0.47-μF 6.3-V ceramic capacitor. Can be used to supply VREF. Connect a 0.01-μF 50-V capacitor between CP1 and CP2. CONTROL AI1 25 I BIN1 22 I Bridge B input 1 Logic input controls state of BOUT1. Internal pulldown. BIN2 23 I Bridge B input 2 Logic input controls state of BOUT2. Internal pulldown. BI0 26 I Bridge B current set Sets bridge B current: 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0 Internal pulldown. BI1 27 I DECAY 19 I Decay mode Low = slow decay, open = mixed decay, high = fast decay. Internal pulldown and pullup. nRESET 16 I Reset input Active-low reset input initializes internal logic and disables the H-bridge outputs. Internal pulldown. nSLEEP 17 I Sleep mode input Logic high to enable device, logic low to enter low-power sleep mode. Internal pulldown. AVREF 12 I Bridge A current set reference input BVREF 13 I Bridge B current set reference input 18 OD Fault Logic low when in fault condition (overtemp, overcurrent) ISENA 6 IO Bridge A ground / Isense Connect to current sense resistor for bridge A ISENB 9 IO Bridge B ground / Isense Connect to current sense resistor for bridge B AOUT1 5 O Bridge A output 1 AOUT2 7 O Bridge A output 2 BOUT1 10 O Bridge B output 1 BOUT2 8 O Bridge B output 2 Reference voltage for winding current set. Can be driven individually with an external DAC for microstepping, or tied to a reference (e.g., V3P3OUT). STATUS nFAULT OUTPUT (1) Connect to motor winding A Connect to motor winding B Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 3 DRV8841 SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 www.ti.com PWP PACKAGE (TOP VIEW) CP1 CP2 VCP VMA AOUT1 ISENA AOUT2 BOUT2 ISENB BOUT1 VMB AVREF BVREF GND 1 28 2 27 3 4 26 5 24 25 6 7 8 23 GND (PPAD) 22 21 9 20 10 19 11 18 12 17 13 16 14 15 GND BI1 BI0 AI1 AI0 BIN2 BIN1 AIN1 AIN2 DECAY nFAULT nSLEEP nRESET V3P3OUT ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) VMx VREF (1) (2) VALUE UNIT Power supply voltage range –0.3 to 47 V Digital pin voltage range –0.5 to 7 V Input voltage –0.3 to 4 V –0.3 to 0.8 V Internally limited A 2.5 A ISENSEx pin voltage Peak motor drive output current, t < 1 μS Continuous motor drive output current (3) Continuous total power dissipation TJ Operating virtual junction temperature range TA Tstg (1) (2) (3) 4 See Dissipation Ratings table –40 to 150 °C Operating ambient temperature range –40 to 85 °C Storage temperature range –60 to 150 °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. Power dissipation and thermal limits must be observed. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 THERMAL INFORMATION DRV8841 THERMAL METRIC (1) PWP UNITS 28 PINS Junction-to-ambient thermal resistance (2) θJA 31.6 (3) θJCtop Junction-to-case (top) thermal resistance θJB Junction-to-board thermal resistance (4) 5.6 ψJT Junction-to-top characterization parameter (5) 0.2 ψJB Junction-to-board characterization parameter (6) 5.5 θJCbot Junction-to-case (bottom) thermal resistance (7) 1.4 (1) (2) (3) (4) (5) (6) (7) 15.9 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN Motor power supply voltage range (1) VM (2) NOM MAX 8.2 45 UNIT V VREF VREF input voltage 1 3.5 IV3P3 V3P3OUT load current 0 1 mA fPWM Externally applied PWM frequency 0 100 kHz (1) (2) V All VM pins must be connected to the same supply voltage. Operational at VREF between 0 V and 1 V, but accuracy is degraded. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 5 DRV8841 SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 www.ti.com ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES IVM VM operating supply current VM = 24 V, fPWM < 50 kHz 5 8 mA IVMQ VM sleep mode supply current VM = 24 V 10 20 μA VUVLO VM undervoltage lockout voltage VM rising 7.8 8.2 V 3.3 3.4 V V3P3OUT REGULATOR V3P3 V3P3OUT voltage IOUT = 0 to 1 mA 3.2 LOGIC-LEVEL INPUTS VIL Input low voltage VIH Input high voltage 2.2 0.6 VHYS Input hysteresis 0.3 IIL Input low current VIN = 0 IIH Input high current VIN = 3.3 V RPD Internal pulldown resistance 0.45 –20 0.7 V 5.25 V 0.6 V 20 μA 100 100 μA kΩ nFAULT OUTPUT (OPEN-DRAIN OUTPUT) VOL Output low voltage IO = 5 mA IOH Output high leakage current VO = 3.3 V 0.5 V 1 μA 0.8 V ±40 μA DECAY INPUT VIL Input low threshold voltage For slow decay (brake) mode 0 VIH Input high threshold voltage For fast decay (coast) mode 2 IIN Input current RPU Internal pullup resistance RPD Internal pulldown resistance V 130 kΩ 80 kΩ H-BRIDGE FETS RDS(ON) HS FET on resistance RDS(ON) LS FET on resistance IOFF Off-state leakage current VM = 24 V, IO = 1 A, TJ = 25°C 0.2 VM = 24 V, IO = 1 A, TJ = 85°C 0.25 VM = 24 V, IO = 1 A, TJ = 25°C 0.2 VM = 24 V, IO = 1 A, TJ = 85°C 0.25 –20 0.32 0.32 20 Ω Ω μA MOTOR DRIVER fPWM Internal current control PWM frequency tBLANK Current sense blanking time tR Rise time 30 200 ns tF Fall time 30 200 ns 160 180 °C 3 μA 50 kHz μs 3.75 PROTECTION CIRCUITS IOCP Overcurrent protection trip level tTSD Thermal shutdown temperature 3 Die temperature 150 A CURRENT CONTROL IREF VREF input current VTRIP xISENSE trip voltage AISENSE Current sense amplifier gain 6 VREF = 3.3 V –3 xVREF = 3.3 V, 100% current setting 635 660 685 xVREF = 3.3 V, 71% current setting 445 469 492 xVREF = 3.3 V, 38% current setting 225 251 276 Reference only Submit Documentation Feedback 5 mV V/V Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 FUNCTIONAL DESCRIPTION PWM Motor Drivers The DRV8841 contains two H-bridge motor drivers with current-control PWM circuitry. A block diagram of the motor control circuitry is shown in Figure 1. VM OCP VM VCP, VGD AOUT1 Predrive AIN1 DCM AIN2 AOUT2 DECAY PWM OCP AISEN + AI[1:0] A=5 DAC 2 AVREF VM OCP VM VCP, VGD BOUT1 Predrive BIN1 DCM BIN2 BOUT2 PWM OCP BISEN + BI[1:0] A =5 DAC 2 BVREF Figure 1. Motor Control Circuitry Note that there are multiple VM pins. All VM pins must be connected together to the motor supply voltage. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 7 DRV8841 SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 www.ti.com Bridge Control The AIN1 and AIN2 input pins directly control the state of the AOUT1 and AOUT2 outputs; similarly, the BIN1 and BIN2 input pins directly control the state of the BOUT1 and BOUT2 outputs. Either input can also be used for PWM control of the load. Table 2 shows the logic. Table 2. H-Bridge Logic xIN1 xIN2 xOUT1 xOUT2 0 0 L L 0 1 L H 1 0 H L 1 1 H H The control inputs have internal pulldown resistors of approximately 100 kΩ. Current Regulation The current through the motor windings is regulated by a fixed-frequency PWM current regulation, or current chopping. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the current until the beginning of the next PWM cycle. For stepping motors, current regulation is normally used at all times, and can changing the current can be used to microstep the motor. For DC motors, current regulation is used to limit the start-up and stall current of the motor. If the current regulation feature is not needed, it can be disabled by connecting the xISENSE pins directly to ground and the xVREF pins to V3P3. The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input from the xVREF pins, and is scaled by a 2-bit DAC that allows current settings of 100%, 71%, 38% of full-scale, plus zero. The full-scale (100%) chopping current is calculated in Equation 1. VREFX ICHOP = 5¾ · RISENSE (1) Example: If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current will be 2.5 V / (5 x 0.25 Ω) = 2 A. Two input pins per H-bridge (xI1 and xI0) are used to scale the current in each bridge as a percentage of the fullscale current set by the VREF input pin and sense resistance. The xI0 and xI1 pins have internal pulldown resistors of approximately 100 kΩ. The function of the pins is shown in Table 3. Table 3. H-Bridge Pin Functions 8 xI1 xI0 RELATIVE CURRENT (% FULL-SCALE CHOPPING CURRENT) 1 1 0% (Bridge disabled) 1 0 38% 0 1 71% 0 0 100% Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 Note that when both xI bits are 1, the H-bridge is disabled and no current flows. Example: If a 0.25-Ω sense resistor is used and the VREF pin is 2.5 V, the chopping current will be 2 A at the 100% setting (xI1, xI0 = 00). At the 71% setting (xI1, xI0 = 01) the current will be 2 A x 0.71 = 1.42 A, and at the 38% setting (xI1, xI0 = 10) the current will be 2 A x 0.38 = 0.76 A. If (xI1, xI0 = 11) the bridge will be disabled and no current will flow. Decay Mode During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM current chopping threshold is reached. This is shown in Figure 2 as case 1. The current flow direction shown indicates the state when the xIN1 pin is high and the xIN2 pin is low. Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or slow decay. In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 2 as case 2. In slow decay mode, winding current is re-circulated by enabling both of the low-side FETs in the bridge. This is shown in Figure 2 as case 3. Figure 2. Decay Mode The DRV8841 supports fast decay, slow decay and a mixed decay mode. Slow, fast, or mixed decay mode is selected by the state of the DECAY pin - logic low selects slow decay, open selects mixed decay operation, and logic high sets fast decay mode. The DECAY pin has both an internal pullup resistor of approximately 130 kΩ and an internal pulldown resistor of approximately 80 kΩ. This sets the mixed decay mode if the pin is left open or undriven. Note that the DECAY pin sets the decay mode for both H-bridges. Mixed decay mode begins as fast decay, but at a fixed period of time (75% of the PWM cycle) switches to slow decay mode for the remainder of the fixed PWM period. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 9 DRV8841 SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 www.ti.com Blanking Time After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. Note that the blanking time also sets the minimum on time of the PWM. nRESET and nSLEEP Operation The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge drivers. All inputs are ignored while nRESET is active. Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In this state all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (approximately 1 ms) needs to pass before the motor driver becomes fully operational. Note that nRESET and nSLEEP have internal pulldown resistors of approximately 100 kΩ. These signals need to be driven to logic high for device operation. Protection Circuits The DRV8841 is fully protected against undervoltage, overcurrent and overtemperature events. Overcurrent Protection (OCP) An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this analog current limit persists for longer than the OCP time, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. The device will remain disabled until either nRESET pin is applied, or VM is removed and re-applied. Overcurrent conditions on both high and low side devices; i.e., a short to ground, supply, or across the motor winding will all result in an overcurrent shutdown. Note that overcurrent protection does not use the current sense circuitry used for PWM current control, and is independent of the ISENSE resistor value or VREF voltage. Thermal Shutdown (TSD) If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. Once the die temperature has fallen to a safe level operation will automatically resume. Undervoltage Lockout (UVLO) If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the device will be disabled and internal logic will be reset. Operation will resume when VM rises above the UVLO threshold. 10 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 DRV8841 www.ti.com SLVSAC0E – MAY 2010 – REVISED AUGUST 2013 THERMAL INFORMATION Thermal Protection The DRV8841 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately 150°C, the device will be disabled until the temperature drops to a safe level. Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature. Power Dissipation Power dissipation in the DRV8841 is dominated by the power dissipated in the output FET resistance, or RDS(ON). Average power dissipation of each H-bridge when running a DC motor can be roughly estimated by Equation 2. P = 2 · RDS(ON) · (IOUT)2 (2) where P is the power dissipation of one H-bridge, RDS(ON) is the resistance of each FET, and IOUT is the RMS output current being applied to each winding. IOUT is equal to the average current drawn by the DC motor. Note that at start-up and fault conditions this current is much higher than normal running current; these peak currents and their duration also need to be taken into consideration. The factor of 2 comes from the fact that at any instant two FETs are conducting winding current (one high-side and one low-side). The total device dissipation will be the power dissipated in each of the two H-bridges added together. The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking. Note that RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when sizing the heatsink. Heatsinking The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad must be thermally connected to copper on the PCB to dissipate heat. On a multi-layer PCB with a ground plane, this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and bottom layers. For details about how to design the PCB, refer to TI application report SLMA002, " PowerPAD™ Thermally Enhanced Package" and TI application brief SLMA004, " PowerPAD™ Made Easy", available at www.ti.com. In general, the more copper area that can be provided, the more power can be dissipated. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DRV8841 11 PACKAGE OPTION ADDENDUM www.ti.com 13-Aug-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) DRV8841PWP ACTIVE HTSSOP PWP 28 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8841 DRV8841PWPR ACTIVE HTSSOP PWP 28 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8841 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. 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Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 13-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device DRV8841PWPR Package Package Pins Type Drawing SPQ HTSSOP 2000 PWP 28 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 16.4 Pack Materials-Page 1 6.9 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 10.2 1.8 12.0 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 13-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DRV8841PWPR HTSSOP PWP 28 2000 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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