MTDN7002ZHS6R

Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 1/ 7
CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDN7002ZHS6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Equivalent Circuit
Outline
MTDN7002ZHS6R
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Continuous
Pulsed
Continuous
Pulsed
Power Dissipation
Symbol
Limits
Unit
VDSS
60
±20
115
700
115
700
(Note 1)
V
V
mA
mA
mA
mA
300(total) (Note 2)
mW
VGSS
ID
IDP
IDR
IDRP
Pd
ESD susceptibility
Junction Temperature
Storage Temperature
(Note 1)
1250
Tj
Tstg
(Note 3)
150
-55~+150
V
°C
°C
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
MTDN7002ZHS6R
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
VGS(th)
1
2.5
IGSS
±10
IDSS
1
3.6
5.5
RDS(ON)*
3
5
GFS
100
Ciss
30.5
Coss
9.3
Crss
5.9
-
Unit
V
V
μA
μA
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 2/ 7
mS
Test Conditions
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=100mA, VGS=5V
ID=100mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0, f=1MHz
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTDN7002ZHS6R
MTDN7002ZHS6R
Package
SOT-363
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
72
CYStek Product Specification
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 3/ 7
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
Typical Transfer Characteristics
0.3
0.3
4V
6V
0.2
0.15
VDS=10V
0.25
3.5V
Drain Current -ID(A)
Drain Current - ID(A)
0.25
3V
0.1
0.2
0.15
0.1
0.05
0.05
VGS=2.2V
0
0
0
1
2
3
Drain-Source Voltage -VDS(V)
0
4
4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10
10
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
VGS=5V
VGS=10V
1
1
0.01
0.1
Drain Current-ID(A)
0.01
1
0.1
1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
7
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
1
2
3
Gate-Source Voltage-VGS(V)
6
5
4
ID=100mA
3
ID=50mA
2
1
1
0.1
0.01
0.001
0
0
MTDN7002ZHS6R
5
10
15
20
Gate-Source Voltage-VGS(V)
25
0
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
1
CYStek Product Specification
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 4/ 7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Power Derating Curve
Capacitance vs Drain-to-Source Voltage
100
Power Dissipation---PD(mW)
350
Capacitance---(pF)
Ciss
C oss
10
Crss
300
Dual
250
200
Single
150
100
50
0
1
0.1
MTDN7002ZHS6R
1
10
Drain-Source Voltage -VDS(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 5/ 7
Reel Dimension
Carrier Tape Dimension
MTDN7002ZHS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 6/ 7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDN7002ZHS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2007.11.07
Revised Date : 2011.03.04
Page No. : 7/ 7
SOT-363 Dimension
Marking:
72
Device
Code
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDN7002ZHS6R
CYStek Product Specification