Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 1/ 7 CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN7002ZHS6R Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit Outline MTDN7002ZHS6R SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Continuous Pulsed Continuous Pulsed Power Dissipation Symbol Limits Unit VDSS 60 ±20 115 700 115 700 (Note 1) V V mA mA mA mA 300(total) (Note 2) mW VGSS ID IDP IDR IDRP Pd ESD susceptibility Junction Temperature Storage Temperature (Note 1) 1250 Tj Tstg (Note 3) 150 -55~+150 V °C °C Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. 3. Human body model, 1.5kΩ in series with 100pF MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 30.5 Coss 9.3 Crss 5.9 - Unit V V μA μA Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 2/ 7 mS Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10V, ID=100mA pF VDS=10V, VGS=0, f=1MHz Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDN7002ZHS6R MTDN7002ZHS6R Package SOT-363 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 72 CYStek Product Specification Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 3/ 7 CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics Typical Transfer Characteristics 0.3 0.3 4V 6V 0.2 0.15 VDS=10V 0.25 3.5V Drain Current -ID(A) Drain Current - ID(A) 0.25 3V 0.1 0.2 0.15 0.1 0.05 0.05 VGS=2.2V 0 0 0 1 2 3 Drain-Source Voltage -VDS(V) 0 4 4 Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 10 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V VGS=10V 1 1 0.01 0.1 Drain Current-ID(A) 0.01 1 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 7 10 Source-Drain Voltage-VSD(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 1 2 3 Gate-Source Voltage-VGS(V) 6 5 4 ID=100mA 3 ID=50mA 2 1 1 0.1 0.01 0.001 0 0 MTDN7002ZHS6R 5 10 15 20 Gate-Source Voltage-VGS(V) 25 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 CYStek Product Specification Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 4/ 7 CYStech Electronics Corp. Characteristic Curves(Cont.) Power Derating Curve Capacitance vs Drain-to-Source Voltage 100 Power Dissipation---PD(mW) 350 Capacitance---(pF) Ciss C oss 10 Crss 300 Dual 250 200 Single 150 100 50 0 1 0.1 MTDN7002ZHS6R 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 5/ 7 Reel Dimension Carrier Tape Dimension MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 6/ 7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDN7002ZHS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : 2011.03.04 Page No. : 7/ 7 SOT-363 Dimension Marking: 72 Device Code 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDN7002ZHS6R CYStek Product Specification