CYStech Electronics Corp. Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 1/7 N-CHANNEL MOSFET MTNK2N3 Description The MTNK2N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol Outline MTNK2N3 D SOT-23 D G S G G：Gate S：Source D：Drain S Ordering Information Device MTNK2N3 MTNK2N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 702● CYStek Product Specification CYStech Electronics Corp. Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C@VGS=10V TA=70°C@VGS=10V ID IDM PD Pulsed Drain Current *1, 2 Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient ESD susceptibility Operating Junction Temperature Range Storage Temperature Range Rth,j-a TJ Tstg Limits 60 ±20 640 500 950 1.38 0.01 90 1000 -55~+150 -55~+150 *1 *2 *2 *3 Unit V V mA mA mA W W/°C °C/W V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 BVDSS/ΔTj 0.05 VGS(th) 1 2.5 IGSS ±10 1 IDSS 100 1.6 2 RDS(ON)* 1.23 5 1.26 4 VSD 1.2 GFS 600 Ciss 62 80 Coss 17.6 Crss 9 Qg 1 Qgs 0.5 Qgd 0.5 td(on) 12 tr 10 td(off) 56 tf 29 - Unit V V/℃ V μA V mS Test Conditions VGS=0, ID=250μA Reference to 25℃, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 VDS=48V, VGS=0, Tj=70℃ ID=200mA, VGS=4.5V ID=100mA, VGS=10V ID=500mA, VGS=10V IS=1.2A, VGS=0V VDS=10V, ID=600mA pF VDS=25V, VGS=0, f=1MHz nC ID=600mA, VDS=50V, VGS=4.5V ns VDS=30V, ID=600mA, RG=3.3Ω, VGS=10V, RD=52Ω μA Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTNK2N3 CYStek Product Specification Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Typical Output Characteristics 1 1 0.9 0.9 TA=25°C 10V 6V 0.8 Drain Current --- ID(A) Drain Current --- ID(A) Typical Output Characteristics 4.5V 0.7 4.0V 0.6 3.5V 0.5 0.4 VGS=3V 0.3 TA=125°C 10V 0.8 6V 4.5V 0.7 4.0V 3.5V 0.6 0.5 0.4 VGS=3V 0.3 0.2 0.2 0.1 0.1 0 0 0 1 2 3 Drain-Source Voltage ---VDS(V) 4 0 1 2 3 Drain-Source Voltage---VDS(V) 4 Breakdown Voltage Variation with Temperature Typical Transfer Characteristics 1.08 1000 VDS=5V 800 Drain Current ---ID(A) Normalized Drain-Source Breakdown Voltage 900 700 600 500 400 300 200 100 0 1.06 1.04 1.02 1 0.98 0 1 2 3 4 5 Gate-Source Voltage---VGS(V) 6 0 Static Drain-Source On-State ResistanceRDS(on)(Ω) Static Drain-Source On-State ResistanceRDS(on)(Ω) 150 3 2 TA=25°C VGS=5V VGS=10V MTNK2N3 50 75 100 125 Junction Temperature---TJ(°C) Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 1 0.001 25 0.01 0.1 Drain Current-ID(A) 1 TA=125°C VGS=5V 2 VGS=10V 1 0.001 0.01 0.1 Drain Current-ID(A) 1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 4/7 Characteristic Curves(Cont.) Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 5 5 Static Drain-Source On-State Resistance-RDS(ON)(Ω) Static Drain-Source On-State Resistance-RDS(ON)(Ω) TA=25°C 4 3 ID=300mA 2 1 ID=50mA 0 TA=125°C 4 3 ID=300mA 2 ID=50mA 1 0 0 2 4 6 8 Gate-Source Voltage-VGS(V) 10 0 Reverse Drain Current vs Source-Drain Voltage 10 4 6 8 Gate-Source Voltage-VGS(V) Capacitance vs Drain-to-Source Voltage 100 1.2 TA=25°C 1 Ciss Capacitance---(pF) Source-Drain Voltage-VSD(V) 2 0.8 TA=125°C 0.6 0.4 C oss 10 Crss 0.2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Reverse Drain Current -IDR(A) 1.4 1.6 0 5 10 15 20 25 Drain-Source Voltage -VDS(V) 30 Safe Operating Area 1000 100μs Drain Current---ID(mA) 1ms 10ms 100 100ms Operation in this area is limited by 10 1s DC VGS=10V, Single pulse, Ta=25°C 1 1 MTNK2N3 10 Drain-Source Voltage---VDS(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTNK2N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTNK2N3 CYStek Product Specification Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V TE● 702 Device Code S Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTNK2N3 CYStek Product Specification