CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID RDSON(max) MTN3418S3 Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 1/7 30V 1.9A 110mΩ Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol Outline MTN3418S3 D SOT-323 D G S G：Gate S：Source D：Drain G S Ordering Information Device MTN3418S3-0-T1-G MTN3418S3 Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS ID IDP Continuous Pulsed Drain Current Limits 30 ±20 1.9 7.6 *1 200 400 750 *2 +150 -55~+150 Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) ESD susceptibility Channel Temperature Storage Temperature PD TCH Tstg Unit V V A A mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* 30 1 400 GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - 133 90 - 2.5 ±5 500 150 110 - 215 54 34 - Unit V V μA nA Test Conditions mS VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 ID=950mA, VGS=4V ID=1.9A, VGS=10V VDS=10V, ID=500mA - pF VDS=10V, VGS=0, f=1MHz 1 V VGS=0V, ISD=1A mΩ *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% MTN3418S3 CYStek Product Specification Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 300 1.8 10V 8V 6V 5V 4V Drain Current - ID(A) 1.6 1.4 1.2 Static Drain-Source On-state Resistance-RDS(on)(mΩ) 2 3V 1 0.8 0.6 0.4 250 200 ID=0.4A, VGS=4V 150 100 ID=0.7A, VGS=10V 50 VGS=2.5V 0.2 0 0 0 0.2 0.4 0.6 0.8 Drain-Source Voltage -VDS(V) 1 1.2 0 50 100 150 Ambient Temperature-Ta(°C) 200 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 2 1000 Drain Current-ID(on)(A) Static Drain-Source On-State Resistance-RDS(on)(mΩ) 1.8 VGS=4V 100 VGS=10 1.6 1.4 Ta=75°C Ta=25°C 1.2 1 0.8 0.6 0.4 0.2 0 10 1 10 100 1000 Drain Current-ID(mA) 0 10000 1 1.5 2 2.5 3 Gate-Source Voltage-VGS(V) 3.5 4 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 10000 500 450 Ta=25°C 400 VGS=0V ID=1.9A 350 Forward Current-IF(mA) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) 0.5 0.7A 300 250 200 0.4A 150 1000 100 10 100 50 1 0 0 MTN3418S3 2 4 6 8 10 Gate-Source Voltage-VGS(V) 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Capacitance vs Reverse Voltage 10 Forward Transfer Admittance---GFS(S) Capacitance-(pF) 1000 Ciss 100 Coss Crss f=1MHz 10 VGS=0V 25°C 1 75°C 0.1 0 5 10 15 20 25 Drain-to-Source Voltage-VDS(V) 1 30 10 100 1000 10000 Drain Current---ID(mA) Power Derating Curve Maximum Safe Operating Area 250 10 Drain Current --- ID(A) DC Power Dissipation---PD(mW) 100μs 1ms 10ms 1 100ms Operation in this area is limited by RDS(ON) 0.1 Ta=25°C, Single pulse, mounted on a ceramic board(900mm² ×0.8mm) 1 10 Drain-Source Voltage -VDS(V) 150 100 50 0 0.01 0.1 200 100 0 50 100 150 Ambient Temperature---TA(℃) 200 Gate SourceThreshold Voltage-VGS(th)(V) Gate Threshold Voltage vs Ambient Temperature 2.4 2.2 2 ID=1mA 1.8 1.6 1.4 1.2 ID=250μA 1 0.8 -50 MTN3418S3 0 50 100 150 Junction Temperature-Tj(°C) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN3418S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3418S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C726S3 Issued Date : 2011.12.20 Revised Date : 2013.09.09 Page No. : 7/7 SOT-323 Dimension Device Code KTTE XX Marking: Date Code 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3418S3 CYStek Product Specification