Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 1/13 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTD120C10J4 Features • Low gate charge • Simple drive requirement • Pb-free lead plating and halogen-free package Equivalent Circuit N-CH P-CH BVDSS ID@VGS=10V(-10V), TC=25°C 100V -100V 9.3A -12A ID@VGS=10V(-10V), TA=25°C RDSON(TYP)@VGS=10V(-10V) 2.0A 122mΩ -2.5A 91mΩ RDSON(TYP)@VGS=4.5V(-4.5V) 132mΩ 106mΩ Outline MTD120C10J4 TO-252-4L G:Gate D:Drain S:Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(-10V) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) Pulsed Drain Current *1 Single Pulse Avalanche Current Avalanche Energy @ L=0.1mH, ID=IAS, VDD=50V(-50V) Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol VDS VGS (Note1) (Note1) (Note2) (Note2) (Note3) (Note1) (Note1) (Note2) (Note2) ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Limits N-channel P-channel 100 ±20 9.3 6.6 2.0 1.7 20 9 4 -100 ±20 -12.0 -8.5 -2.5 -2.1 -20 -30 58 37.5 18.7 2.4 1.7 -55~+175 Unit V A mJ W °C *2. Duty cycle ≤ 1% MTD120C10J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 2/13 Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 4 Thermal Resistance, Junction-to-ambient, max (Note2) 62.5 °C/W Rth,j-a Thermal Resistance, Junction-to-ambient, max (Note4) 90 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg *1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. Typ. Max. 100 1.2 - 5.4 122 132 2.4 ±100 1 25 160 175 - 8.0 1.0 2.3 5.6 16.6 21.2 16.4 281 42 21 - - 0.80 19.5 17.9 2.0 8.0 1.3 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=2A VGS=±20V, VDS=0V VDS =90V, VGS =0V VDS =90V, VGS =0V, Tj=125°C VGS =10V, ID=2A VGS =4.5V, ID=1.5A nC ID=2A, VDS=80V, VGS=10V ns VDS=50V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=2A, VGS=0V IF=2A, VGS=0V, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. MTD120C10J4 CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 3/13 CYStech Electronics Corp. P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg*1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. Typ. Max. -100 -1.2 - 7.1 91 106 -2.4 ±100 -1 -25 120 140 - 27 3.8 6.3 10.6 18.4 75.6 65.2 1323 116 58 - - -0.75 22.6 24.8 -2.3 -9.2 -1.3 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=-250μA VDS =VGS, ID=-250μA VDS =-10V, ID=-2A VGS=±20V, VDS=0V VDS =-80V, VGS =0V VDS =-80V, VGS =0V, Tj=125°C VGS =-10V, ID=-2A VGS =-4.5V, ID=-1.5A nC ID=-2A, VDS=-80V, VGS=-10V ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω pF VGS=0V, VDS=-25V, f=1MHz A V ns nC IS=-2.0A, VGS=0V IF=-2.0A, VGS=0V, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTD120C10J4-0-T3-G Package TO-252-4L (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD120C10J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 4/13 Q1, N-CH Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10 V 9V 8V 7V 6V 16 12 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 20 VGS=4V 8 VGS=3V 4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=2.5V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 VGS=3V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 100 0.2 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 700 R DS(ON), Normalized Static DrainSource On-State Resistance 800 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=2A 600 500 400 300 200 100 VGS=10V, ID=2A 2.4 RDS(ON) @Tj=25°C : 122mΩ typ. 2 1.6 1.2 VGS=4.5V, ID=1.5A RDS(ON) @Tj=25°C : 132mΩ typ. 0.8 0.4 0 0 MTD120C10J4 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 5/13 CYStech Electronics Corp. Q1, N-CH Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 6 4 2 VDS=80V ID=2A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 10 4 6 8 Qg, Total Gate Charge(nC) Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 2.5 100 ID, Maximum Drain Current(A) RDS(ON) Limit 10 ID, Drain Current(A) 0 100μ s 1 1ms 10ms 100ms 0.1 1s TA=25°C, Tj=175°C, VGS=10V RθJA=90°C/W,Single Pulse 0.01 DC 2 1.5 1 TA=25°C, VGS=10V RθJA=90°C/W 0.5 0 0.001 0.1 MTD120C10J4 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 6/13 CYStech Electronics Corp. Q1, N-CH Typical Characteristics(Cont.) Typical Transfer Characteristics 20 50 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=10V TJ(MAX) =175°C TA=25°C θJA=90°C/W 40 12 Power (W) ID, Drain Current (A) 16 8 4 30 20 10 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance 1 D=0.5 0.2 1.Rθ JA(t)=r(t)*Rθ JA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*Rθ JA(t) 4.Rθ JA=90 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Maximum Drain Current vs Case Temperature ID, Maximum Drain Current(A) 12 10 8 6 4 Tj(max)=175°C,VGS=4.5V RθJC=4°C/W 2 0 25 MTD120C10J4 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 7/13 CYStech Electronics Corp. Q2, P-CH Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 20 -I D, Drain Current (A) 16 -10V, -9V, -8V, -7V, -6V, -5V, -4V 12 VGS=-3V 8 4 VGS=-2.5V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage 1000 1.2 VGS=-3V -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-4.5V 100 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance 600 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 4 6 -IS , Source Drain Current(A) 8 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage ID=-2A 500 2 400 300 200 100 2.4 2.2 2 VGS=-10V, ID=-2A RDS(ON) @Tj=25°C : 91mΩ typ. 1.8 1.6 1.4 1.2 1 0.8 VGS=-4.5V, ID=-1.5A RDS(ON) @Tj=25°C : 106mΩ typ. 0.6 0.4 0 0 MTD120C10J4 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 8/13 Q2, P-CH Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , Threshold Voltage(V) 10000 Capacitance---(pF) Ciss 1000 C oss 100 1.2 ID=-1mA 1 0.8 0.6 ID=-250μ A Crss 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 50 75 100 125 150 175 200 Gate Charge Characteristics 100 10 1 VDS=-10V Pulsed TA=25°C 8 6 4 2 VDS=-80V ID=-2A 0 0.1 0.01 0.1 1 -ID, Drain Current(A) 0 10 5 10 15 20 Qg, Total Gate Charge(nC) 25 30 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 3 -I D, Maximum Drain Current(A) 100 RDS(ON) Limit 10 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μ s 1 1ms 10ms 100ms 1s 0.1 TA=25°C, Tj=175C, VGS=-10V θJA=90°C/W, Single Pulse 0.01 DC 2.5 2 1.5 1 TA=25°C, VGS=-10V RθJA=90°C/W 0.5 0 0.001 0.1 MTD120C10J4 1 10 100 -ID, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 9/13 CYStech Electronics Corp. Q2, P-CH Typical Characteristics(Cont.) Typical Transfer Characteristics 20 50 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=-10V TJ(MAX) =175°C TA=25°C θJA=90°C/W 40 12 Power (W) -I D, Drain Current (A) 16 8 4 30 20 10 0 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance 1 D=0.5 0.2 1.Rθ JA(t)=r(t)*Rθ JA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*Rθ JA(t) 4.Rθ JA=90 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Maximum Drain Current vs Case Temperature -I D, Maximum Drain Current(A) 14 12 10 8 6 4 Tj(max)=175°C, VGS=-4.5V RθJC=4°C/W 2 0 25 MTD120C10J4 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 10/13 Reel Dimension Carrier Tape Dimension MTD120C10J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 11/13 Recommended soldering footprint Unit : mm MTD120C10J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 12/13 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD120C10J4 CYStek Product Specification Spec. No. : C986J4 Issued Date : 2014.12.05 Revised Date : Page No. : 13/13 CYStech Electronics Corp. TO-252-4L Dimension Marking: Tab Device Name Date code D120 C10 □□□□ Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252-4L Plastic Surface Mount Package CYStek Package Code: J4 Inches Min. Max. 0.0866 0.0945 0.0000 0.0059 0.0157 0.0236 0.0199 0.0315 0.2047 0.2165 0.0177 0.0217 0.2126 0.2283 0.1799 - DIM A A1 b b2 b3 c2 D D1 Millimeters Min. Max. 2.20 2.40 0.00 0.15 0.40 0.60 0.50 0.80 5.20 5.50 0.45 0.55 5.40 5.80 4.57 - DIM E E1 e F H L L1 L4 Inches Min. Max. 0.2520 0.2677 0.1500 0.0500 REF 0.0157 0.0236 0.3701 0.4016 0.0551 0.0697 0.0945 0.1181 0.0315 0.0472 Millimeters Min. Max. 6.40 6.80 3.81 1.27 REF 0.40 0.60 9.40 10.20 1.40 1.77 2.40 3.00 0.80 1.20 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD120C10J4 CYStek Product Specification