MTB60P06E3

CYStech Electronics Corp.
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 1/7
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB60P06E3
BVDSS
-60V
ID
-20A
RDSON(TYP)@VGS=-10V,ID=-15A 57mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
RDSON(TYP)@VGS=-4.5V,ID=-7A
67mΩ
Outline
TO-220
MTB60P06E3
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.14mH, ID=-20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
-60
±20
-20
-12
-50
-20
28
5
50
20
-55~+150
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
MTB60P06E3
CYStek Product Specification
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
62.5
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
Unit
-60
-1
-
-1.3
57
67
18
-2.5
±100
-1
-25
75
90
-
V
V
nA
-
16
4
5
14
8
30
6
1460
72
61
-
-
20
15
-20
-80
-1.3
-
Test Conditions
S
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20, VDS=0
VDS =-60V, VGS =0
VDS =-60V, VGS =0, TJ=125°C
VGS =-10V, ID=-15A
VGS =-4.5V, ID=-7A
VDS =-5V, ID=-10A
nC
ID=-10A, VDS=-30V, VGS=-10V
ns
VDS=-30V, ID=-10A, VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-25V, f=1MHz
μA
mΩ
A
V
ns
nC
IF=IS, VGS=0V
IF=-5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB60P06E3
MTB60P06E3
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs / tube, 20 tubes/box, 4 boxes/carton
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 3/7
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
5V
-ID, Drain Current(A)
70
60
50
-BVDSS, Drain-Source Breakdown Voltage
(V)
80
-VGS=4V
40
30
20
-VGS=3V
10
-VGS=2V
2
4
6
8
-VDS, Drain-Source Voltage(V)
75
70
65
ID=-250μA,
VGS=0V
60
-100
0
0
80
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-2.5V
100
VGS=-3V
VGS=-3.5V
VGS=-4.5V
VGS=-10V
10
0.001
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
2
4
6
8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
120
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
400
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-50
360
320
280
240
200
ID=-15A
ID=-7A
160
120
80
40
VGS=-4.5V, ID=-7A
100
80
60
VGS=-10V, ID=-15A
40
20
0
0
MTB60P06E3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
ID=-250uA
1.4
1.2
1
0.8
Crss
0.6
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
12
100
10
10μs
100μs
1ms
10ms
100ms
DC
1
TC=25°C, Tj=150°C
VGS=-10V
Single Pulse
0.1
VDS=-12V
10
-VGS, Gate-Source Voltage(V)
RDSON limited
-ID, Drain Current (A)
60
Gate Charge Characteristics
Maximum Safe Operating Area
VDS=-30V
8
VDS=-48V
6
4
2
ID=-10A
0
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
Maximum Drain Current vs Case Temperature
5
10
15
Qg, Total Gate Charge(nC)
20
Typical Transfer Characteristics
25
80
VDS=-10V
70
20
-ID, Drain Current(A)
-ID, Maximum Drain Current(A)
20
Tj, Junction Temperature(°C)
15
10
5
60
50
40
30
20
10
0
0
25
MTB60P06E3
50
75
100
125
TC, Case Temperature(°C)
150
175
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
12
CYStek Product Specification
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 5/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Power Derating Curve
60
PD, Power Dissipation(W)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
50
40
30
20
10
0
0.01
0.01
0.1
1
10
-ID, Drain Current(A)
100
0
20
40
60
80
100 120
TC, Case Temperature(℃)
140
160
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5 °C/W max.
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB60P06E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB60P06E3
CYStek Product Specification
Spec. No. : C796E3
Issued Date : 2011.12.05
Revised Date :2011.12.28
Page No. : 7/7
CYStech Electronics Corp.
TO-220 Dimension
A
Marking:
B
D
E
C
H
Device Name
I
□□□□
1
3
G
60P06
K
M
2
Date Code
3
N
2
1
4
O
P
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Inches
Min.
Max.
0.2441 0.2598
0.3386 0.3543
0.1732 0.1890
0.0492 0.0571
0.0142 0.0197
0.3858 0.4094
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
6.20
6.60
8.60
9.00
4.40
4.80
1.25
1.45
0.36
0.50
9.80
10.40
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0299 0.0394
0.0461 0.0579
*0.1000
0.5217 0.5610
0.5787 0.6024
Millimeters
Min.
Max.
*3.83
0.76
1.00
1.17
1.47
*2.54
13.25
14.25
14.70
15.30
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB60P06E3
CYStek Product Specification