Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 1/ 12 CYStech Electronics Corp. N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC1016S6R Features • Low on-resistance • ESD protected • High speed switching • Low-voltage drive • Pb-free package BVDSS ID RDSON(typ.) @VGS=(-)4.5V RDSON(typ.) @VGS=(-)2.5V RDSON(typ.) @VGS=(-)1.8V Equivalent Circuit N-CH 20V 0.82A 0.30Ω 0.43Ω 0.63Ω P-CH -20V -0.57A 0.61Ω 1.00Ω 1.64Ω Outline MTC1016S6R Tr1 SOT-363R Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Limits N-channel P-channel 20 -20 Unit V Gate-Source Voltage VGS ±8 ±8 V Continuous Drain Current @TA=25 °C, VGS=4.5V(-4.5V) ID 0.82 -0.57 A Continuous Drain Current @TA=70 °C, VGS=4.5V(-4.5V) ID 0.66 -0.46 A IDM 3.4 -2.3 A Pulsed Drain Current (Note 1) Power Dissipation @TA=25°C Power Dissipation @TA=70°C Operating Junction and Storage Temperature Range PD Tj; Tstg 0.30 0.18 -55~+150 W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on minimum pad of FR-4 board, t≤5s. MTC1016S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 2/ 12 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Symbol Limit Unit Rth,ja 415 °C/W Note : Surface mounted on minimum pad of FR-4 board, t≤5s. N-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. 20 0.5 - 0.8 0.30 0.43 0.63 1.1 1.2 ±5 1 10 0.40 0.56 0.82 - - 58.5 12.3 7.8 6 6 26 20 0.79 0.09 0.27 - - 0.75 0.82 3.4 1.0 Unit Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0 (Tj=70°C) VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA VGS=1.8V, ID=350mA VDS=10V, ID=400mA pF VDS=16V, VGS=0, f=1MHz ns VDS=10V, ID=250mA, VGS=4.5V, RG=10Ω nC VDS=10V, ID=250mA, VGS=4.5V V μA Ω A V VGS=0V, IS=150mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC1016S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 3/ 12 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. Unit -20 -0.5 - -0.8 0.61 0.65 1.00 1.64 0.7 -1.2 ±5 -1 -10 0.75 0.96 1.30 2.20 - V V - 54.7 16.6 11.9 6 10 23 28 1.13 0.09 0.42 - - -0.79 -0.57 -2.3 -1.2 Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±8V, VDS=0 VDS=-20V, VGS=0 VDS=-16V, VGS=0 (Tj=70°C) VGS=-4.5V, ID=-430mA VGS=-4V, ID=-300mA VGS=-2.5V, ID=-300mA VGS=-1.8V, ID=-150mA VDS=-10V, ID=-250mA pF VDS=-16V, VGS=0, f=1MHz ns VDS=-10V, ID=-250mA, VGS=-4.5V, RG=10Ω nC VDS=-10V, ID=-250mA, VGS=-4.5V μA Ω A V VGS=0V, IS=-150mA Ordering Information Device MTC1016S6R MTC1016S6R Package Shipping SOT-363 3000 pcs / Tape & Reel (Pb-free lead plating and Halogen-free package) Marking CA1 CYStek Product Specification Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 4/ 12 CYStech Electronics Corp. N-Channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current (A) 3.2 BVDSS, Normalized Drain-Source Breakdown Voltage 3.6 5V, 4.5V,4V,3.5V 3V 2.8 2.4 2.5V 2.0 1.6 2V 1.2 0.8 ID=250μA, VGS=0V 1.2 1 0.8 VGS=1.5V 0.4 0.6 0.0 0 1 2 3 VDS, Drain-Source Voltage(V) 4 -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 1 VGS=1.5V 0.8 VGS=1.8V 0.6 0.4 0.2 VGS=2.5V Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 VGS=0V VGS=4.5V 0 0 0.01 0.1 1 ID, Drain Current(A) 0 10 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 0.8 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=600mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.6 VGS=4.5V, ID=600mA 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 0.31Ω typ. 0.6 0 0 MTC1016S6R 1 2 3 4 5 6 VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 5/ 12 CYStech Electronics Corp. N-Channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss C oss 10 Crss 1.6 1.4 1.2 1 0.8 ID=250μA 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 4 VGS, Gate-Source Voltage(V) 6 4 2 3 2 VDS=10V ID=250mA 1 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.2 0.4 0.6 0.8 Qg, Total Gate Charge(nC) 1 Maximum Drain Current vs JunctionTemperature 10 1 1 100μs ID, Maximum Drain Current(A) RDS(ON) Limit ID, Drain Current (A) 60 80 100 120 140 160 Gate Charge Characteristics TJ(MAX) =150°C TA=25°C RθJA=415°C/W 0 0.001 20 40 5 10 8 0 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Power (W) ID=1mA 1ms 10ms 0.1 100ms TA=25°C, Tj=150°C, VGS=4.5V, RθJA=415°C/W Single Pulse 0.01 DC 0.001 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA=25°C, VGS=4.5V, RθJA=415°C/W 0.1 0 0.01 MTC1016S6R 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 6/ 12 N-Channel Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Typical Transfer Characteristics 10 GFS, Forward Transfer Admittance(S) 3.6 VDS=5V ID, Drain Current (A) 3 25°C 2.4 1.8 1.2 0.6 0 0 0.5 1 1.5 2 2.5 3 VGS , Gate-Source Voltage(V) 3.5 4 VDS=10V Ta=25°C Pulsed 1 0.1 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC1016S6R CYStek Product Specification Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 7/ 12 CYStech Electronics Corp. P-Channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 2.4 -ID, Drain Current (A) 2.1 1.8 3.5V 3V 1.5 2.5V 1.2 0.9 ID=-250μA, VGS=0V -BVDSS, Normalized Drain-Source Breakdown Voltage 5V 4.5V 4V 2V 0.6 1.2 1 0.8 -VGS=1.5V 0.3 0.6 0.0 0 1 2 3 4 -75 -50 -25 5 -VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1 3.6 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 4 3.2 -VGS=1.5V 2.8 2.4 2 -VGS=1.8V 1.6 1.2 - VGS=4V -VGS=2.5V 0.8 0.4 0.4 0.2 VGS=0V 0 0.1 -ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 -IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 3 ID=-430mA 2.5 Tj=150°C 0.6 -VGS=4.5V 0.01 Tj=25°C 0.8 0 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 1.5 1 0.5 1.6 VGS=-4.5V, ID=-430mA 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 0.62Ω typ. 0.6 0 0 MTC1016S6R 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 8/ 12 CYStech Electronics Corp. P-Channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss C oss Crss 1.6 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 75 100 125 150 175 5 -VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=415°C/W 8 Power (W) 25 Gate Charge Characteristics 10 6 4 2 4 3 2 VDS=-10V ID=-250mA 1 0 0 0.001 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.2 0.4 0.6 0.8 1 Qg, Total Gate Charge(nC) 1.2 1.4 Maximum Drain Current vs JunctionTemperature 10 0.6 100μs RDS(ON) 1 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 0 Tj, Junction Temperature(°C) Limit 1ms 10ms 0.1 100ms TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=415°C/W Single Pulse 0.01 DC 0.001 0.5 0.4 0.3 0.2 0.1 TA=25°C, VGS=-4.5V, RθJA=415°C/W 0 0.01 MTC1016S6R 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 9/ 12 P-Channel Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Typical Transfer Characteristics 10 GFS, Forward Transfer Admittance(S) 2.4 VDS=-5V -ID, Drain Current (A) 2 1.6 1.2 0.8 0.4 0 0 1 2 3 4 -VGS , Gate-Source Voltage(V) 5 VDS=-10V Ta=25°C Pulsed 1 0.1 0.01 0.001 0.01 0.1 -ID, Drain Current(A) 1 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC1016S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 10/ 12 Reel Dimension Carrier Tape Dimension MTC1016S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 11/ 12 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC1016S6R CYStek Product Specification Spec. No. : C392S6R Issued Date : 2013.08.01 Revised Date : Page No. : 12/ 12 CYStech Electronics Corp. SOT-363 Dimension Marking: CA1 XX Device Code Date Code 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC1016S6R CYStek Product Specification