MTC1016S6R

Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 1/ 12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC1016S6R
Features
• Low on-resistance
• ESD protected
• High speed switching
• Low-voltage drive
• Pb-free package
BVDSS
ID
RDSON(typ.) @VGS=(-)4.5V
RDSON(typ.) @VGS=(-)2.5V
RDSON(typ.) @VGS=(-)1.8V
Equivalent Circuit
N-CH
20V
0.82A
0.30Ω
0.43Ω
0.63Ω
P-CH
-20V
-0.57A
0.61Ω
1.00Ω
1.64Ω
Outline
MTC1016S6R
Tr1
SOT-363R
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Limits
N-channel P-channel
20
-20
Unit
V
Gate-Source Voltage
VGS
±8
±8
V
Continuous Drain Current @TA=25 °C, VGS=4.5V(-4.5V)
ID
0.82
-0.57
A
Continuous Drain Current @TA=70 °C, VGS=4.5V(-4.5V)
ID
0.66
-0.46
A
IDM
3.4
-2.3
A
Pulsed Drain Current (Note 1)
Power Dissipation @TA=25°C
Power Dissipation @TA=70°C
Operating Junction and Storage Temperature Range
PD
Tj; Tstg
0.30
0.18
-55~+150
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on minimum pad of FR-4 board, t≤5s.
MTC1016S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 2/ 12
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Symbol
Limit
Unit
Rth,ja
415
°C/W
Note : Surface mounted on minimum pad of FR-4 board, t≤5s.
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
20
0.5
-
0.8
0.30
0.43
0.63
1.1
1.2
±5
1
10
0.40
0.56
0.82
-
-
58.5
12.3
7.8
6
6
26
20
0.79
0.09
0.27
-
-
0.75
0.82
3.4
1.0
Unit
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0 (Tj=70°C)
VGS=4.5V, ID=600mA
VGS=2.5V, ID=400mA
VGS=1.8V, ID=350mA
VDS=10V, ID=400mA
pF
VDS=16V, VGS=0, f=1MHz
ns
VDS=10V, ID=250mA, VGS=4.5V, RG=10Ω
nC
VDS=10V, ID=250mA, VGS=4.5V
V
μA
Ω
A
V
VGS=0V, IS=150mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC1016S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 3/ 12
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
Unit
-20
-0.5
-
-0.8
0.61
0.65
1.00
1.64
0.7
-1.2
±5
-1
-10
0.75
0.96
1.30
2.20
-
V
V
-
54.7
16.6
11.9
6
10
23
28
1.13
0.09
0.42
-
-
-0.79
-0.57
-2.3
-1.2
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0
VDS=-20V, VGS=0
VDS=-16V, VGS=0 (Tj=70°C)
VGS=-4.5V, ID=-430mA
VGS=-4V, ID=-300mA
VGS=-2.5V, ID=-300mA
VGS=-1.8V, ID=-150mA
VDS=-10V, ID=-250mA
pF
VDS=-16V, VGS=0, f=1MHz
ns
VDS=-10V, ID=-250mA, VGS=-4.5V,
RG=10Ω
nC
VDS=-10V, ID=-250mA, VGS=-4.5V
μA
Ω
A
V
VGS=0V, IS=-150mA
Ordering Information
Device
MTC1016S6R
MTC1016S6R
Package
Shipping
SOT-363
3000 pcs / Tape & Reel
(Pb-free lead plating and Halogen-free package)
Marking
CA1
CYStek Product Specification
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 4/ 12
CYStech Electronics Corp.
N-Channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
3.2
BVDSS, Normalized Drain-Source
Breakdown Voltage
3.6
5V, 4.5V,4V,3.5V
3V
2.8
2.4
2.5V
2.0
1.6
2V
1.2
0.8
ID=250μA,
VGS=0V
1.2
1
0.8
VGS=1.5V
0.4
0.6
0.0
0
1
2
3
VDS, Drain-Source Voltage(V)
4
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
1
VGS=1.5V
0.8
VGS=1.8V
0.6
0.4
0.2
VGS=2.5V
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
VGS=0V
VGS=4.5V
0
0
0.01
0.1
1
ID, Drain Current(A)
0
10
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
0.8
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=600mA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
VGS=4.5V, ID=600mA
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 0.31Ω typ.
0.6
0
0
MTC1016S6R
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 5/ 12
CYStech Electronics Corp.
N-Channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
C oss
10
Crss
1.6
1.4
1.2
1
0.8
ID=250μA
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
4
VGS, Gate-Source Voltage(V)
6
4
2
3
2
VDS=10V
ID=250mA
1
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.2
0.4
0.6
0.8
Qg, Total Gate Charge(nC)
1
Maximum Drain Current vs JunctionTemperature
10
1
1
100μs
ID, Maximum Drain Current(A)
RDS(ON)
Limit
ID, Drain Current (A)
60 80 100 120 140 160
Gate Charge Characteristics
TJ(MAX) =150°C
TA=25°C
RθJA=415°C/W
0
0.001
20 40
5
10
8
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
ID=1mA
1ms
10ms
0.1
100ms
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=415°C/W
Single Pulse
0.01
DC
0.001
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA=25°C, VGS=4.5V, RθJA=415°C/W
0.1
0
0.01
MTC1016S6R
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 6/ 12
N-Channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
10
GFS, Forward Transfer Admittance(S)
3.6
VDS=5V
ID, Drain Current (A)
3
25°C
2.4
1.8
1.2
0.6
0
0
0.5
1
1.5
2
2.5
3
VGS , Gate-Source Voltage(V)
3.5
4
VDS=10V
Ta=25°C
Pulsed
1
0.1
0.01
0.001
0.01
0.1
ID, Drain Current(A)
1
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=415 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTC1016S6R
CYStek Product Specification
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 7/ 12
CYStech Electronics Corp.
P-Channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
2.4
-ID, Drain Current (A)
2.1
1.8
3.5V
3V
1.5
2.5V
1.2
0.9
ID=-250μA,
VGS=0V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
5V
4.5V
4V
2V
0.6
1.2
1
0.8
-VGS=1.5V
0.3
0.6
0.0
0
1
2
3
4
-75 -50 -25
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1
3.6
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
4
3.2
-VGS=1.5V
2.8
2.4
2
-VGS=1.8V
1.6
1.2
- VGS=4V
-VGS=2.5V
0.8
0.4
0.4
0.2
VGS=0V
0
0.1
-ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
-IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs
Gate-Source Voltage
1.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
3
ID=-430mA
2.5
Tj=150°C
0.6
-VGS=4.5V
0.01
Tj=25°C
0.8
0
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
1.5
1
0.5
1.6
VGS=-4.5V, ID=-430mA
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 0.62Ω typ.
0.6
0
0
MTC1016S6R
1
2
3
4
5
6
-VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 8/ 12
CYStech Electronics Corp.
P-Channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
C oss
Crss
1.6
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
75 100 125 150 175
5
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=415°C/W
8
Power (W)
25
Gate Charge Characteristics
10
6
4
2
4
3
2
VDS=-10V
ID=-250mA
1
0
0
0.001
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.2
0.4
0.6
0.8
1
Qg, Total Gate Charge(nC)
1.2
1.4
Maximum Drain Current vs JunctionTemperature
10
0.6
100μs
RDS(ON)
1
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
Limit
1ms
10ms
0.1
100ms
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=415°C/W
Single Pulse
0.01
DC
0.001
0.5
0.4
0.3
0.2
0.1
TA=25°C, VGS=-4.5V, RθJA=415°C/W
0
0.01
MTC1016S6R
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 9/ 12
P-Channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
10
GFS, Forward Transfer Admittance(S)
2.4
VDS=-5V
-ID, Drain Current (A)
2
1.6
1.2
0.8
0.4
0
0
1
2
3
4
-VGS , Gate-Source Voltage(V)
5
VDS=-10V
Ta=25°C
Pulsed
1
0.1
0.01
0.001
0.01
0.1
-ID, Drain Current(A)
1
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=415 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTC1016S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 10/ 12
Reel Dimension
Carrier Tape Dimension
MTC1016S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 11/ 12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC1016S6R
CYStek Product Specification
Spec. No. : C392S6R
Issued Date : 2013.08.01
Revised Date :
Page No. : 12/ 12
CYStech Electronics Corp.
SOT-363 Dimension
Marking:
CA1
XX
Device
Code
Date Code
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC1016S6R
CYStek Product Specification