MTP2071M3

CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 1/8
20V P-CHANNEL Enhancement Mode MOSFET
MTP2071M3
BVDSS
-20V
ID
-5A
52mΩ (typ.)
66mΩ (typ.)
80mΩ (typ.)
RDSON@VGS=-4.5V, ID=-4.2A
RDSON@VGS=-2.5V, ID=-2A
RDSON@VGS=-1.8V, ID=-1A
Features
• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free package
Symbol
Outline
MTP2071M3
SOT-89
G DD S
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
-20
±12
-5
-4
-20 *1, 3
2 *2
1.3 *2
-55~+150
Unit
V
V
A
A
A
W
°C
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
MTP2071M3
CYStek Product Specification
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 2/8
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
62.5
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
Min.
Typ.
Max.
Unit
Test Conditions
-20
-0.5
-
-0.65
8.4
52
66
80
-1.0
±100
-1
-25
70
85
110
V
V
S
nA
μA
μA
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VDS=-5V, ID=-3A
VGS=±12V, VDS=0
VDS=-20V, VGS=0
VDS=-16V, VGS=0 (Tj=70°C)
ID=-4.2A, VGS=-4.5V
ID=-2A, VGS=-2.5V
ID=-1A, VGS=-1.8V
-
1121
76
67
7
9
33
38
8
2
3
-
-
-0.8
15
8
-1.3
-
mΩ
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDS=-10V, ID=-1A, VGS=-4.5V
RG=6Ω
nC
VDS=-10V, ID=-4A, VGS=-4.5V
V
ns
nC
VGS=0V, IS=-1.7A
IS=-4A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTP2071M3
MTP2071M3
Package
SOT-89
(Pb-free)
Shipping
Marking
1000 pcs / Tape & Reel
2071
CYStek Product Specification
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
3V
-ID, Drain Current (A)
15
10
-VGS=2.5V
-VGS=1.8V
5
38
-BVDSS, Drain-Source Breakdown Voltage
(V)
20
-VGS=1.5V
36
34
32
30
ID=-250μA,
VGS=0V
28
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.4
VGS=-1.5V
VGS=-
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2.5V
100
VGS=-3V
VGS=-4.5V
VGS=-10V
VGS=0V
1.2
Tj=25°C
1
Tj=150°C
0.8
0.6
0.4
0.2
10
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IDR, Reverse Drain Current (A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
140
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
180
160
140
ID=-4.5A
ID=-2A
ID=-1A
ID=-0.2A
120
100
80
60
40
20
VGS=-1.8V, ID=-1A
120
VGS=-2.5V, ID=-2A
100
80
60
40
VGS=-4.5V, ID=-4.2A
20
0
0
MTP2071M3
2
4
6
8
Gate-Source Voltage-VGS(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 4/8
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) ,Normalized Threshold
Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=-250μA
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
100
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
8
VDS=-10V
ID=-4A
6
4
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs JunctionTemperature
100
6
ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
10μs
10
100μs
1ms
10ms
1
TA=25°C, Tj=150°C
VGS=-4.5V
Single Pulse
0.1
100ms
DC
0.01
5
4
3
2
1
TA=25°C, VGS=-10V
0
0.1
MTP2071M3
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
PD, Power Dissipation(W)
Power Derating Curve
2.2
2
1.8
Mounted on FR-4 board
with 1 in² pad area
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
0.1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
MTP2071M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP2071M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2071M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 8/8
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
H
C
Date Code
2071
□□□□
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2071M3
CYStek Product Specification