MTN1N60L3 BVDSS

CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN1N60L3
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=0.2A
600V
0.4A
0.9A
7.8Ω(typ)
Description
The MTN1N60L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN1N60L3
SOT-223
D
S
D
G
G：Gate
D：Drain S：Source
Ordering Information
Device
MTN1N60L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN1N60L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V,TC=100°C
Continuous Drain Current @VGS=10V,TA=25°C
Continuous Drain Current @VGS=10V,TA=100°C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @L=10mH, ID=1A, VDD=50V
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=100℃
VDS
VGS
Operating Junction and Storage Temperature Range
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
600
±30
0.9
0.57
0.4
0.25
1.6 *1
1
5
15
6
3.1
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
8.2
40 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 120°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTN1N60L3
*1
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.6
0.2
7.8
4.0
±100
1
10
9.5
V
V/°C
V
S
nA
Ω
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=0.2A
VGS=±30V
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
VGS =10V, ID=0.2A
-
192
5
4
-
pF
VGS=0V, VDS=25V, f=1MHz
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
6
1.8
1.8
7
7.6
14.4
41.2
Max.
-
-
0.81
190
350
0.4
1.6
1.5
-
Unit
Test Conditions
nC
VDS=480V, VGS=10V, ID=0.4A
ns
VDS=300V, ID=0.4A, VGS=10V,
RGS=25Ω
A
V
ns
nC
IS=0.4A, VGS=0V
IF=1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTN1N60L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
15V
10V
9V
7V
ID, Drain Current(A)
1.6
BVDSS, Normallized Drain-Source
Breakdown Voltage
2
6V
1.2
5.5V
0.8
5V
0.4
VGS=4.5V
1.2
1
0.8
0.6
0.4
-100
0
0
10
20
30
40
50
VDS, Drain-Source Voltage(V)
ID=250μA,
VGS=0V
60
15
200
1
14
VGS=10V
13
VGS=0V
IDR, Reverse Drain Current(A)
R DS(ON), Static Drain-Source On-State
Resistance(Ω)
0
50
100
150
TA, Ambient Temperature(°C)
Body Diode Forward Voltage Variation vs Source
Current and Temperature
Static Drain-Source On-State resistance vs Drain Current
12
11
10
9
8
7
Ta=150°C
Ta=25°C
6
0.1
5
0.1
1
ID, Drain Current(A)
0
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0.3
0.6
0.9
1.2
VSD, Source Drain Voltage(V)
1.5
Static Drain-Source On-resistance vs Ambient Temperature
2.4
14
RDS(ON), Normalized Static Drain-Source
On-state Resistance
15
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
-50
Ta=25°C
ID=0.2A
13
12
11
10
9
8
7
6
5
0
MTN1N60L3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
2
ID=0.2A,
VGS=10V
1.6
1.2
0.8
0.4
0
-100
RDS(ON) @Tj=25°C : 7.8Ω typ.
-50
0
50
100
150
TA, Ambient Temperature(°C)
200
CYStek Product Specification
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Drain Current vs Gate-Source Voltage
2
1000
TA=25°C
VDS=30V
ID, Drain Current(A)
Capacitance(pF)
f=1MHz
Ciss
100
Coss
10
1.5
1
VDS=10V
0.5
Crss
0
1
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
0
30
Maximum Drain Current vs Junction Temperature
10
0.45
VDS=120V
0.4
0.35
0.3
0.25
0.2
0.15
0.1
TA=25°C, VGS=10V, RθJA=40°C/W
0.05
8
VGS, Gate-Source Voltage(V)
ID, Maximum Drain Current(A)
20
Gate Charge Characteristics
0.5
VDS=300V
6
VDS=480V
4
2
0
ID=0.4A
0
25
50
75
100
125
150
0
175
Tj, Junction Temperature(°C)
2
4
8
6
Qg, Total Gate Charge(nC)
Single Pulse Maximum Power Dissipation
Maximum Safe Operating Area
300
10
Peak Transient Power (W)
Operation in this area
is limited by RDS(ON)
ID, Drain Current(A)
5
10
15
VGS, Gate-Source Voltage(V)
10 μ s
1
100μ s
0.1
1ms
10ms
100ms
0.01
TA=25°C, VGS=10V, RθJA=40°C/W
Tj=150°C, Single pulse
DC
MTN1N60L3
10
100
VDS, Drain-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
200
150
100
50
0.001
1
250
1000
0
1E-05 0.0001 0.001
0.01
0.1
Pulse Width(s)
1
10
100
CYStek Product Specification
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t 2
3.T JM-T A=P DM*RθJA(t)
4.RθJA=40 °C/W
0.05
0.02
0.01
0.01
0.001
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN1N60L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN1N60L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN1N60L3
CYStek Product Specification
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
B
Device Name
C
1
2
1N60
Date Code
3
D
E
F
H
G
Style: Pin 1.Gate 2.Drain 3.Source
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
o
0
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
o
0
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN1N60L3
CYStek Product Specification