MTN1634V8

Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN1634V8
BVDSS
ID
RDSON(TYP)
25V
60A
VGS=10V, ID=20A 3.4mΩ
VGS=4.5V, ID=20A 3.7mΩ
VGS=2.5V, ID=20A 4.6mΩ
VGS=1.5V, ID=10A 14.2mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTN1634V8
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTN1634V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTN1634V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=8V, TC=25°C(package limited)
Continuous Drain Current @ VGS=8V, TC=25°C(silicon limited)
Continuous Drain Current @ VGS=8V, TC=100°C
Continuous Drain Current @ VGS=8V, TA=25°C
Continuous Drain Current @ VGS=8V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=40A, RG=25Ω
TC=25℃
Total Power Dissipation
TA=25℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
25
+10/-8
60
92
58
22
17.6
120 *1
14
80
46
2.3 *2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.7
53 *2
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTN1634V8
*1
Min.
Typ.
Max.
25
0.5
-
0.66
51
3.4
3.7
4.6
14.2
1.1
±100
1
25
4.5
5.5
7.8
21
-
3735
297
281
-
Unit
V
S
nA
μA
mΩ
pF
Test Conditions
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=+10V/-8V
VDS =20V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =8V, ID=20A
VGS =4.5V, ID=20A
VGS =2.5V, ID=20A
VGS =1.5V, ID=10A
VDS=15V, VGS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
25
6
12
8
10
30
16
1.5
Max.
-
-
0.79
25
20
20
120
1
-
Unit
Test Conditions
nC
VDS=12.5V, VGS=4.5V, ID=20A
ns
VDS=12.5V, ID=20A, VGS=4.5V,
RGS=2Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTN1634V8
CYStek Product Specification
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
8V,7V,6V,5V,4V,3V
100
ID, Drain Current (A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
120
VGS=2V
80
60
40
1.2
1
0.8
0.6
20
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
100
VGS=1.5V
10
VGS=2.5V
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=8V
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
ID=20A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
VGS=8V, ID=20A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 3.4 mΩ typ.
0.4
0
0
MTN1634V8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
Crss
1000
C oss
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
VDS=12.5V
ID=20A
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
100μs
1ms
10ms
1
100ms
TA=25°C, Tj=150°C
VGS=8V, θJA=125°C/W
Single Pulse
DC
MTN1634V8
30
35
80
60
40
Limited by package
20
VGS=8V, RθJC=2.7°C/W
0
0.01
0.01
ID, Maximum Drain Current(A)
RDSON
Limited
10
0.1
10
15
20
25
Qg, Total Gate Charge(nC)
100
1000
100
5
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
0.1
1
10
VDS , Drain-Source Voltage(V)
100
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
Typical Transfer Characteristics
500
100
VDS=5V
90
Drain Current -ID(A)
TJ(MAX) =150°C
TA=25°C
θJA=125°C/W
400
80
Power (W)
70
60
50
40
300
200
30
100
20
10
0
0
0.5
1
1.5
2
Gate-Source Voltage-VGS(V)
2.5
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTN1634V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN1634V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN1634V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910V8
Issued Date : 2013.04.11
Revised Date : 2014.04.21
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
Date
Code
D D
1634
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Inches
Min.
Max.
0.0276
0.0354
0.0000
0.0197
0.0094
0.0138
0.0039
0.0079
0.1280
0.1339
0.1201
0.1280
0.0945
0.1024
DIM
A
A1
b
c
D
D1
D2
Millimeters
Min.
Max.
0.70
0.90
0.00
0.50
0.24
0.35
0.10
0.20
3.25
3.40
3.05
3.25
2.40
2.60
DIM
E
E1
e
H
L
L1
L2
Inches
Min.
Max.
0.1181
0.1260
0.0531
0.0610
0.0256 BSC
0.1260
0.1339
0.0118
0.0197
0.0039
0.0079
0.0445 REF
Millimeters
Min.
Max.
3.00
3.20
1.35
1.55
0.65 BSC
3.20
3.40
0.30
0.50
0.10
0.20
1.13 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN1634V8
CYStek Product Specification