MTB40P06V8

Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTB40P06V8
BVDSS
ID
RDSON@VGS=-10V, ID=-4.9A
RDSON@VGS=-4.5V, ID=-3A
-60V
-5A
48mΩ(typ)
59mΩ(typ)
Description
The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB40P06V8
DFN3×3
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTB40P06V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB40P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
Limits
-60
±20
-14
-8.9
-5
-4
-56 *1
21
8.4
2.5 *3
1.6 *3
-55~+150
ID
IDM
PD
Tj, Tstg
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Ciss
Coss
Crss
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB40P06V8
Min.
Typ.
Max.
-60
-1.0
-
-1.6
48
59
11
-3.0
±100
-1
-25
63
80
-
-
1766
69
46
18
7
50
27
-
Unit
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-48V, VGS=0
VDS=-48V, VGS=0, Tj=125°C
VGS=-10V, ID=-4.9A
VGS=-4.5V ID=-3A
VDS=-5V, ID=-4.9A
pF
VDS=-25V, VGS=0, f=1MHz
ns
VDS=-30V, ID=-1A, VGS=-10V,
RG=6Ω
V
nA
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Source-Drain Diode
VSD *1
trr
Qrr
Min.
-
Typ.
27
6.7
5.4
Max.
-
Unit
Test Conditions
nC
VDS=-48V, ID=-5A, VGS=-10V
-
-0.81
22
36
-1.3
-
V
ns
nC
IS=-4.9A, VGS=0V
IF=-5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB40P06V8
CYStek Product Specification
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
40
30
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current(A)
10V, 9V, 8V, 7V, 6V, 5V
4V
20
-VGS=3V
10
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-3V
100
VGS=-4.5V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
5
10
15
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2
ID=-4.9A
180
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
140
120
100
80
60
40
1.6
VGS=-10V, ID=-4.9A
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 48mΩ
20
0
0
0
MTB40P06V8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Maximum Safe Operating Area
50
75 100 125 150 175
10
-VGS, Gate-Source Voltage(V)
RDS(ON)
Limit
-ID, Drain Current(A)
25
Gate Charge Characteristics
100
10
100μs
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°, VGS=-10V
RθJA=50°C/W, Single Pulse
1s
DC
VDS=-48V
ID=-5A
8
6
4
2
0
0.01
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
Forward Transfer Admittance vs Drain Current
-ID, Maximum Drain Current(A)
1
VDS=-5V
Pulsed
Ta=25°C
0.1
MTB40P06V8
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
6
10
0.01
0.001
4
Maximum Drain Current vs Junction Temperature
100
GFS, Forward Transfer Admittance(S)
0
Tj, Junction Temperature(°C)
5
4
3
2
1
TA=25°C, VGS=-10V, RθJA=50°C/W
0
0.01
0.1
1
-ID, Drain Current(A)
10
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
40
350
VDS=-10V
35
300
Power (W)
250
-ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
RθJA=50°C/W
200
150
100
50
30
25
20
15
10
5
0
0.0001
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
0
1000
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB40P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB40P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB40P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796V8
Issued Date : 2013.10.17
Revised Date : 2013.10.23
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
Date
Code
D D
B40
2611
P06
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
Min.
Max.
0.605
0.850
0.152 REF
0.000
0.050
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB40P06V8
CYStek Product Specification