BAS21SN3

Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 1/7
CYStech Electronics Corp.
High voltage switching (double) diodes
BAS21/A/C/SN3
Description
High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
•Fast switching speed
•Low forward voltage drop
•Pb-free lead plating and halogen-free package
Mechanical Data
•Case : SOT-23, molded plastic
•Terminals : Solderable per MIL-STD-202 Method 208
•Weight : 0.008 grams(approx.)
Pinning
Pin
1
2
3
Outline
Description
BAS21
A
NC
K
BAS21A
K1
K2
A1,A2
BAS21C
A1
A2
K1,K2
SOT-23
BAS21S
A1
K2
K1,A1
3
1
(1) BAS21
(3)BAS21C
(2)BAS21A
(4)BAS21S
2
Marking:
Type
BAS21N3
BAS21AN3
BAS21CN3
BAS21SN3
Marking Code
JS
JS2
JS3
JS4
Diode configuration and symbol
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current
Symbol
VRRM
VRWM
VR
IFM
IO
@ tp=1μs
@ tp=100μs
@ tp=1s
IFSM
Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
IFRM
PD
RθJA
TJ
TSTG
Limits
unit
250
V
400
200
9
3
1.7
625
250
500
-65~+150
-65~+150
mA
mA
A
mA
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Characteristic
Symbol
Reverse Breakdown Voltage
VBR
Forward Voltage
VF
(Note)
Reverse Leakage Current
IR
Diode Capacitance
CD
Reverse Recovery Time
trr
Condition
IR=100μA
IF=100mA
IF=200mA
VR=200V
VR=200V, Tj=150°C
VR=0V, f=1MHz
IF=IR=30mA RL=100Ω
measured at IR=3mA
Min.
Max.
Unit
250
-
1
1.25
100
100
5
V
V
V
nA
μA
pF
-
50
ns
Note: Pulse test, tp=300μs, duty cycle<2%.
Ordering Information
Device
BAS21N3-0-T1-G
BAS21AN3-0-T1-G
BAS21CN3-0-T1-G
BAS21SN3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and
halogen-free package)
3000 pcs / Tape & Reel
Marking
JS
JS2
JS3
JS4
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BAS21/A/C/SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 3/7
Typical Characteristics
Reverse Leakage Current vs Reverse Voltage
Forward Current vs Forward Voltage
100
150°C
Pulse
width=300μs
Reverse Leakage Current---IR(μA)
Instantaneous Forward Current---IF(mA)
1000
100
150°C
125°C
10
100°C
1
75°C
25°C
0.1
10
125℃
100℃
1
75℃
0.1
25℃
0.01
0.001
0
0.3
0.6
0.9
Forward Voltage---VF(V)
1.2
1.5
0
50
150
200
250
Power Derating Curve
Junction Capacitance vs Reverse Voltage
250
10
Tj=25℃, f=1.0MHz
Power Dissipation---PD(mW)
Junction Capacitance---C J (pF)
100
Reverse Voltage---VR(V)
1
200
150
100
50
0
0.1
0.1
BAS21/A/C/SN3
1
10
Reverse Voltage---VR(V)
100
0
25
50
75
100
125
150
175
Ambient Temperature ---TA(℃ )
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 4/7
Typical Characteristics(Cont.)
Maximum Permissible Non-repetitive Peak Forward Surge Current
Peak Forward Surge Current---I FSM(A)
10
9
8
7
6
5
4
3
2
1
0
0.001
0.01
0.1
1
10
Pulse Duration---tp(ms)
Recommended Soldering Footprint
BAS21/A/C/SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BAS21/A/C/SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAS21/A/C/SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 7/7
SOT-23 Dimension
Diagram:
Marking:
L4_
XXX
3-Lead SOT-23 Plastic Surface Mounted
Package.
CYStek Package Code: N3
• BAS21 N3 : Single Diode
(Marking Code JS)
• BAS21AN3 : Common Anode. (Marking Code JS2)
• BAS21CN3 : Common Cathode. (Marking Code JS3)
• BAS21SN3 : Series Connected. (Marking Code JS4)
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAS21/A/C/SN3
CYStek Product Specification