MTB09P03J3

Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB09P03J3
Features
BVDSS
-30V
ID
-75A
RDSON@VGS=-10V, ID=-25A
8mΩ(typ.)
RDSON@VGS=-4.5V, ID=-10A
11mΩ(typ.)
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
Outline
MTB09P03J3
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
MTB09P03J3-0-T3-G
Package
Shipping
TO-252
2500 pcs / Tape & Reel
(Pb-free lead plating & Halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB09P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
-30
±20
-75
-48
-160
-20
20
93
50
-55~+150
Pd
Tj, Tstg
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-15A, Rated VDS=-30V P-Channel
Unit
V
A
mJ
W
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
1.34
50 (Note)
110
Note : When mounted on the minimum pad size recommended (PCB mount).
Unit
°C/W
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB09P03J3
Min.
Typ.
Max.
Unit
Test Conditions
-30
-1
-
-1.5
37
8
11
-3
±100
-1
-10
9
15
V
V
S
nA
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-5V, ID=-25A
VGS=±20, VDS=0V
VDS =-24V, VGS =0V
VDS =-24V, VGS =0V, Tj=125°C
VGS =-10V, ID=-25A
VGS =-4.5V, ID=-10A
-
56
7.9
11.5
22
20
65
12
-
μA
mΩ
nC
ID=-25A, VDS=-15V, VGS=-10V
ns
VDS=-15V, ID=-1A, VGS=-10V,
RG=2.7Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
4400
486
405
3
-
-
47
43
-75
-160
-1.2
-
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 3/9
pF
VGS=0V, VDS=-15V, f=1MHz
Ω
VGS=15mV, VDS=0, f=1MHz
A
V
ns
nC
IF=-24A, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB09P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
180
-ID, Drain Current(A)
160
140
120
-VGS=5V
-VGS=4V
100
80
60
-VGS=3V
40
20
40
-BVDSS, Drain-Source Breakdown Voltage
(V)
200
38
36
34
32
-VGS=2V
0
0
30
-100
10
2
4
6
8
-VDS, Drain-Source Voltage(V)
ID=-250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
200
1.2
100
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-2.5V
10
VGS=-3V
VGS=-4.5V
VGS=-10V
1
0.001
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
2
4
6
8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
20
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-50
160
120
80
ID=-25A
40
15
VGS=-4.5V, ID=-10A
10
VGS=-10V, ID=-25A
5
0
0
0
MTB09P03J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.8
10000
-VGS(th) , Threshold Voltage(V)
Capacitance---(pF)
Ciss
1000
C oss
Crss
ID=-250uA
1.6
1.4
1.2
1
0.8
0.6
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
10
1000
100
VDS=-5V
10μs
100μs
1ms
10ms
100ms
DC
RDSON
Limited
10
-VGS, Gate-Source Voltage(V)
-ID, Drain Current (A)
60
Gate Charge Characteristics
Maximum Safe Operating Area
1
VGS=-10V,
TC=150°C
Single Pulse
0.1
8
VDS=-10V
6
4
VDS=-15V
2
ID=-10A
0
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
Forward Transfer Admittance vs Drain Current
-ID, Maximum Drain Current(A)
1
VDS=-10V
Pulsed
Ta=25°C
0.1
MTB09P03J3
30
45
60
Qg, Total Gate Charge(nC)
75
90
10
0.01
0.001
15
Maximum Drain Current vs Case Temperature
100
GFS, Forward Transfer Admittance(S)
20
Tj, Junction Temperature(°C)
80
70
60
50
40
30
20
10
0
0.01
0.1
1
-ID, Drain Current(A)
10
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
1
D=0.5
1.ZθJC(t)=1.34 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB09P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB09P03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB09P03J3
CYStek Product Specification
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B09
P03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB09P03J3
CYStek Product Specification