MTB40P06Q8

CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 1/8
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTB40P06Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-6.2A
RDSON@VGS=-4.5V,ID=-5A
-60V
-6.2A
33mΩ(typ)
45mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB40P06Q8
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTB40P06Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB40P06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Symbol
BVDSS
VGS
TA=25°C
TA=70°C
(Note 2)
TA=25°C
Total Power Dissipation (Note 1)
TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
ID
IDM
PD
Tj ; Tstg
Rth,j-a
Limits
-60
±20
-6.2
-5
-40
3.1
2
-55~+150
40
Unit
V
A
W
°C
°C/W
Note : 1.Surface mounted on FR-4 board, t≤10sec. The value in any given application depends on the user’s specific board
design.
2.Pulse width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-60
V
VGS=0, ID=-250μA
VGS(th)
-1
-1.7
-2.5
V
VDS=VGS, ID=-250μA
IGSS
±100
nA
VGS=±20V, VDS=0
-1
VDS=-48V, VGS=0
IDSS
μA
VDS=-48V, VGS=0, Tj=125°C
-25
33
40
ID=-6.2A, VGS=-10V
*RDS(ON)
mΩ
45
50
ID=-5A, VGS=-4.5V
*GFS
13
S
VDS=-5V, ID=-6.2A
Dynamic
Ciss
1910
pF
VDS=-30V, VGS=0, f=1MHz
Coss
98.3
Crss
62.8
*td(ON)
9.7
VDD=-30V, ID=-6.2A,
*tr
6.2
ns
VGS=-10V, RG=3Ω, RD=4.7Ω
*td(OFF)
34
*tf
14.3
*Qg
38.7
nC
VDS=-30V, VGS=-10V, ID=-6.2A
*Qgs
8.6
*Qgd
9
Source Drain Diode
*IS
-4.2
A
*ISM
-16
*VSD
-0.72
-1
V
VGS=0V, IS=-1A
*trr
32
ns
IF=6.2A, dIF/dt=100A/μs
*Qrr
44
nC
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB40P06Q8
CYStek Product Specification
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Temperature
Typical Output Characteristics
1.4
36
-BVDSS, Normalized Drain-Source
Breakdown Voltage
40
10V, 9V, 8V, 7V, 6V, 5V
-ID, Drain Current(A)
32
28
-VGS=4V
24
20
16
12
8
-VGS=3V
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
4
0.4
-100
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-3V
100
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
4
8
12
16
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-50
160
120
80
ID=-6.2A
40
1.8
VGS=-10V, ID=-6.2A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 33mΩ
0.6
0.4
0
0
MTB40P06Q8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 4/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalize Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
10
RDSON
Limited
10
100μs
1ms
10ms
100ms
1
1s
VGS=-10V,RθJA=40°C/W
TA=25°C, Tj=150°C
Single Pulse
0.1
DC
-VGS, Gate-Source Voltage(V)
100
-ID, Drain Current (A)
60
Gate Charge Characteristics
Maximum Safe Operating Area
VDS=-30V
ID=-6.2A
8
6
4
2
0
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
5
10
15 20 25 30 35
Qg, Total Gate Charge(nC)
40
45
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Junction Temperature
100
GFS, Forward Transfer Admittance(S)
8
-ID, Maximum Drain Current(A)
20
Tj, Junction Temperature(°C)
7
6
5
4
3
2
TA=25°C, VGS=-10V, RθJA=40°C/W
1
0
25
MTB40P06Q8
50
75
100
125
150
Tj, Junction Temperature(°C)
175
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 5/8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
100
VDS=-10V
90
-ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
40
80
Power (W)
70
60
50
40
30
20
30
10
20
10
0
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
12
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTB40P06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTB40P06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB40P06Q8
CYStek Product Specification
Spec. No. : C796Q8
Issued Date : 2011.12.23
Revised Date : 2014.10.06
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
40P06
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB40P06Q8
CYStek Product Specification