MTA090N02KC3

CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTA090N02KC3
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
BVDSS
ID @VGS=4V, TA=25°C
RDSON@VGS=4V, ID=1A
RDSON@VGS=2.5V,ID=1A
RDSON@VGS=1.8V,ID=500mA
Symbol
20V
1.4A
63mΩ (typ)
83mΩ (typ)
160mΩ (typ)
Outline
MTA090N02KC3
SOT-523
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTA090N02KC3-0-T1-G
Package
SOT-523
(Pb-free lead plating package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA090N02KC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4V
Continuous Drain Current @ TA=70°C, VGS=4V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Limits
20
±8
1.4 (Note 3)
1.1 (Note 3)
6.0
280 (Note 3)
1200 (Note 4)
-55~+150
ID
IDM
PD
VESD
Tj, Tstg
Unit
V
A
mW
V
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
Rɵja
Rɵjc
(Note 3)
Limit
450
312
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board.
4. Human body model, 1.5kΩ in series with 100pF.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
MTA090N02KC3
Min.
Typ.
Max.
20
0.3
-
63
83
160
3.8
1.0
±10
1
10
100
120
250
-
-
159
26
27
4.4
17.8
14.8
17
2.6
0.56
0.4
-
Unit
Test Conditions
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0V
VDS=20V, VGS=0V
VDS=16V, VGS=0V (Tj=70°C)
VGS=4V, ID=1A
VGS=2.5V, ID=1A
VGS=1.8V, ID=500mA
VDS=3V, ID=1A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=10V, ID=200mA, VGS=4.5V,
RG=10Ω
nC
VDS=10V, ID=200mA, VGS=4.5V
V
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
*VSD
*trr
*Qrr
-
0.84
4.6
1.0
1.2
-
V
ns
nC
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 3/8
VGS=0V, IS=1A
IF=0.2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
6
BVDSS, Normalized Drain-Source
Breakdown Voltage
10 V, 9V, 8V, 7V, 6V, 5V, 4V, 3V
ID, Drain Current (A)
5
4
VGS=2V
3
2
ID=250μA,
VGS=0V
1.2
1
0.8
1
0.6
0
0
0.5
1
1.5
VDS, Drain-Source Voltage(V)
-75 -50 -25
2
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
800
600
400
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=1.5V
VGS=1.8V
VGS=2V
VGS=2.5V
VGS=3V
VGS=4V
200
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
VGS=0V
0
0.01
MTA090N02KC3
0
0.1
1
ID, Drain Current(A)
10
0
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
CYStek Product Specification
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1.8
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
800
ID=1A
700
600
500
400
300
200
100
VGS=4V, ID=1A
RDS(ON) @Tj=25°C : 63mΩ typ.
1.6
1.4
1.2
1
VGS=2.5V, ID=1A
RDS(ON) @Tj=25°C : 83mΩ typ.
0.8
0.6
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
7
-75 -50 -25
8
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
1000
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
GFS , Forward Transfer Admittance(S)
TJ(MAX) =150°C
TA=25°C
RθJA=450°C/W
2
1
MTA090N02KC3
0.01
0.1
1
Pulse Width(s)
50
75 100 125 150 175
10
3
0
0.001
25
Forward Transfer Admittance vs Drain Current
5
4
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
100
1
0.1
VDS=3V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
10
1.8
100μ s
1
1ms
10ms
0.1
100ms
0.01
DC
TA=25°C, Tj=150°C,
VGS=4V, RθJA=450°C/W
Single Pulse
1.6
ID, Maximum Drain Current(A)
ID, Drain Current (A)
RDS(ON)
Limited
1.4
1.2
1
0.8
0.6
0.4
TA=25°C, VGS=4V, RθJA=450°C/W
0.2
0.001
0
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
6
8
5
6
4
VDS=10V
ID=200mA
2
75
100
125
150
Tj, Junction Temperature(°C)
175
Typical Transfer Characteristics
10
ID, Drain Current (A)
VGS, Gate-Source Voltage(V)
Gate Charge Characteristics
50
VDS=3V
TA=25°C
4
3
2
1
0
0
1
2
3
4
Qg, Total Gate Charge(nC)
5
6
0
0
1
2
3
VGS, Gate-Source Voltage(V)
4
5
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Zθ JA(t)
4.Rθ JA=450 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTA090N02KC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTA090N02KC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA090N02KC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C983C3
Issued Date : 2014.11.19
Revised Date :
Page No. : 8/8
SOT-523 Dimension
Marking:
C
A
Date Code
3
D
1
B
HN
XX
Device Code
2
G
F
H
I
E
J
K
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
L
N
M
O
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
Min.
Max.
0.0079 0.0157
0.0591 0.0669
0.0118 0.0197
0.0295 0.0335
0.0118 0.0197
0.0039 0.0118
0.0039 0.0118
*0.0197
-
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
0.20
0.40
1.50
1.70
0.30
0.50
0.75
0.85
0.30
0.50
0.10
0.30
0.10
0.30
*0.50
-
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
*0.0197
0.0610 0.0650
0.0276 0.0315
0.0224 0.0248
0.0020 0.0059
0.0039 0.0118
0
0.0031
Millimeters
Min.
Max.
*0.50
1.55
1.65
0.70
0.80
0.57
0.63
0.05
0.15
0.10
0.30
0
0.08
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA090N02KC3
CYStek Product Specification