Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 BVCEO IC RCESAT (Typ) 50V 3A 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA • Excellent current gain characteristics • Complementary to BTB1424A3 • Pb-free lead plating and halogen-free package Symbol Outline BTD2150A3 TO-92 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD2150A3-X-TB-G BTD2150A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD2150A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Limit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg Collector Current Power Dissipation Junction Temperature Storage Temperature Unit 80 50 6 3 7 (Note) 750 150 -55~+150 V V V A A mW °C °C Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 80 50 6 180 180 150 - Typ. 0.1 0.25 90 13 Max. 100 100 0.25 0.5 1.5 820 - Unit V V V nA nA V V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank R S T Range 180~390 270~560 390~820 BTD2150A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.25 1 0.2 Collector Current---IC(A) Collector Current---IC(A) IB=500uA IB=400uA 0.15 IB=300uA IB=200uA 0.1 IB=100uA 0.05 IB=0 0.9 0.8 IB=2.5mA IB=2mA 0.7 IB=1.5mA 0.6 0.5 IB=1mA 0.4 0.3 IB=500uA 0.2 0.1 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 3 4.5 IB=10mA 2.5 IB=8mA IB=6mA 2 IB=25mA 4 Collector Current---IC(A) Collector Current---IC(A) 6 IB=4mA 1.5 IB=2mA 1 0.5 IB=20mA 3.5 IB=15mA 3 IB=10mA 2.5 2 IB=5mA 1.5 1 0.5 IB=0 0 IB=0 0 0 1 2 3 4 5 6 Collector-to-Emitter Voltage---VCE(V) 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 6 10000 Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V VCE(SAT) 1000 IC=100IB IC=50IB 100 IC=20IB 10 10 1 BTD2150A3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 4/7 Characteristic Curves(Cont.) Capacitance vs Reverse-Biased Voltage Saturation Voltage vs Collector Current 1000 VBE(SAT)@IC=10IB Capacitance---(pF) Saturation Voltage---(mV) 10000 1000 Cib 100 10 Cob 1 100 1 10 100 1000 Collector Current---IC(mA) 10000 0.1 1 10 Reverse-Biased Voltage---(V) 100 Power Derating Curve Power Dissipation---PD(mW) 800 700 600 500 400 300 200 100 0 0 BTD2150A3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 5/7 TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTD2150A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD2150A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 7/7 TO-92 Dimension α2 A Marking: B 1 2 3 Date Code D2150 □ □□ HFE Rank α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150A3 CYStek Product Specification