CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTD1768N3 B：Base C：Collector E：Emitter Ordering Information Device BTD1768N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj ; Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Limits 100 80 5 1 2 (Note) 225 556 -55~+150 Unit V V V A A mW °C/W °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min. 100 80 5 120 - Typ. 0.15 100 20 Max. 1 1 0.4 560 - Unit V V V μA μA V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=80V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Q R S Range 120~270 180~390 270~560 BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 3/7 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=3V 100 HFE@VCE=2V VBESAT@IC=20IB 100 VCESAT@IC=20IB 10 10 1 10 100 Collector Current---IC(mA) 1 1000 On Voltage vs Collector Current 10 100 Collector Current---IC(mA) 1000 Transition Frequency vs Collector Current 1000 Transition Frequency---fT(MHz) On Voltage---(mV) 1000 VBE(on)@VCE=2V 100 10 100 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) 1000 Power Derating Curve Capacitance Characteristics 250 100 Power Dissipation---PD(mW) Capacitance---Cob(pF) f=1MHz 10 200 150 100 50 0 1 0.1 BTD1768N3 1 10 Collector Base Voltage-- VCB(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 4/7 Reel Dimension Carrier Tape Dimension BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 5/7 Recommended Soldering Footprint BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1768N3 CYStek Product Specification Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code AJ Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated.. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1768N3 CYStek Product Specification