CYStech Electronics Corp. BVCEO IC RCE(SAT) PNP Epitaxial Planar Transistor BTB1198N3 Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 1/7 -80V -1A 320mΩ(typ.) Features • Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA • High breakdown voltage, BVCEO=-80V • Complementary to BTD1782N3 • Pb-free and Halogen-free package • AEC-Q101 qualified. Symbol Outline BTB1198N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTB1198N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTB1198N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits -80 -80 -8 -1 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V A mW mW °C/W °C/W °C °C Note : Free air condition Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *hFE fT Cob Min. -80 -80 -8 120 - Typ. -0.16 -0.32 200 11 Max. -100 -100 -0.3 -0.6 390 20 Unit V V V nA nA V Ω MHz pF Test Conditions IC=-50μA IC=-2mA IE=-50μA VCB=-80V VEB=-7V IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Q R Range 120~270 180~390 Moisture Sensitivity Level : conform to JEDEC level 1 Recommended Storage Condition: Temperature : ≤ 30 °C Humidity : ≤ 60% RH BTB1198N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 3/7 Typical Characteristics Output Characteristics Output Characteristics 0.1 0.45 IB=2.5mA 0.4 Collector Current---IC(A) Collector Current---IC(A) IB=500uA IB=400uA IB=300uA 0.05 IB=200uA IB=100uA 0.35 IB=2mA 0.3 IB=1.5mA 0.25 IB=1mA 0.2 0.15 IB=500uA 0.1 0.05 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Output Characteristics 1.2 IB=10mA 0.8 IB=8mA 0.7 Collector Current---IC(A) Collector Current---IC(A) 6 Output Characteristics 0.9 IB=6mA 0.6 IB=4mA 0.5 0.4 IB=2mA 0.3 0.2 0.1 IB=25mA IB=20mA 1 IB=15mA 0.8 IB=10mA 0.6 IB=5mA 0.4 0.2 IB=0 IB=0 0 0 0 1 2 3 4 5 6 0 Collector-to-Emitter Voltage---VCE(V) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 Saturation Voltage---(mV) 1000 VCE=3V Current Gain---HFE 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 100 VCE=2V 10 VCE=1V VCE(SAT) 1000 IC=25IB 100 IC=20IB IC=10IB 10 1 1 BTB1198N3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Capacitance Characteristics 100 Collector Output Capacitance--Cob(pF) Saturation Voltage---(mV) 10000 VBE(SAT)@IC=10IB 1000 10 1 100 1 10 100 1000 Collector Current---IC(mA) 1 10000 Power Derating Curve 1000 250 Power Dissipation---PD(mW) Cutoff Frequency---fT(MHz) 100 Reverse-biased Collector Base Voltage---VCB(V) Cutoff frequency vs Collector Current VCE=10V 100 200 150 100 50 0 10 1 BTB1198N3 10 10 100 Collector Current---IC(mA) 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTB1198N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1198N3 CYStek Product Specification Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : 2015.09.11 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code AK Date Code: Year+Month Year: 7→2007, 8→2008 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1198N3 CYStek Product Specification