Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 1/7 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2655K3 BVCEO IC RCESAT(max) 60V 2A 300mΩ Features • High breakdown voltage, BVCEO≥ 60V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating package Symbol Outline BTC2655K3 TO-92L B：Base C：Collector E：Emitter Ordering Information Device BTC2655K3-0-TB-G BTC2655K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / bag, 10 bags/box, 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTC2655K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 120 60 7 2 5 (Note) 0.5 900 139 -55~+150 Unit V V V A A A mW °C/W °C Note : Pulse test, pulse width≤300μs, duty cycle≤2% Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob ton tstg tf Min. 120 60 7 0.5 200 80 - Typ. 100 100 0.9 250 13 40 500 120 Max. 100 100 300 300 350 1.2 400 - Unit V V V nA nA mV mΩ mV V MHz pF ns Test Conditions IC=50μA IC=1mA IE=50μA VCB=120V VEB=7V IC=1A, IB=50mA IC=1A, IB=50mA IC=1A, IB=20mA IC=1A, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=1.5A VCE=2V, IC=300mA, f=100MHz VCB=10V, IE=0A,f=1MHz VCC=30V, IC=1A, IB1=-IB2=33mA, RL=30Ω *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% BTC2655K3 CYStek Product Specification Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 2000 700 Collector Current---IC(mA) 1600 Collector Current---IC(A) IB=10mA IB=8mA 1800 IB=6mA 1400 1200 IB=4mA 1000 800 600 IB=2mA 400 IB=2.5mA 600 IB=2mA 500 400 IB=1.5mA 300 IB=1mA 200 IB=500uA 100 200 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Emitter Grounded Output Characteristics 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current 140 1000 IB=500uA VCE=5V 120 IB=400uA 100 80 IB=300uA 60 IB=200uA Current Gain---HFE Collector Current---IC(mA) 6 40 VCE=2V 100 VCE=1V IB=100uA 20 IB=0 0 10 0 1 2 3 4 5 6 1 Collector-to-Emitter Voltage---VCE(V) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE(SAT) Saturation Voltage---(mV) Saturation Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 IC=100IB IC=50IB 100 VBE(SAT)@IC=50IB IC=20IB 10 100 1 BTC2655K3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 4/7 Characteristic Curves(Cont.) Capacitance Characteristics On Voltage vs Collector Current 1000 1000 On Voltage---(mV) Capacitance---(pF) f=1MHz Cib 100 10 Cob VCE=2V 1 100 1 10 100 1000 Collector Current---IC(mA) 0.1 10000 1 10 Reverse-biased Voltage---(V) 100 Cutoff Frequency vs Collector Current Power Derating Curve 1000 900 Power Dissipation---PD(mW) Cutoff Frequency---FT(MHZ) 1000 FT@VCE=5V 100 10 1 BTC2655K3 10 100 Collector Current --- IC(mA) 1000 800 700 600 500 400 300 200 100 0 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 5/7 TO-92L Taping Outline DIM A1 A T d d1 P P0 P2 F1, F2 △h W W0 W1 W2 H H0 L1 D0 t1 t2 P1 △P BTC2655K3 Item Millimeters Component body width Component body height Component body thickness Lead wire diameter Lead wire diameter 1 Pitch of component Feed hole pitch Hole center to component center Lead to lead distance Component alignment, F-R Tape width Hole down tape width Hole position Hole down tape position Height of component from tape center Lead wire clinch height Lead wire (tape portion) Feed hole diameter Taped lead thickness Carrier tape thickness Position of hole Min. 4.70 7.80 3.70 0.35 0.60 12.40 12.50 6.05 2.20 -1.00 17.50 5.50 8.50 19.00 15.50 2.50 3.80 0.35 0.15 3.55 Max. 5.10 8.20 4.10 0.55 0.80 13.00 12.90 6.65 2.80 1.00 19.00 6.50 9.50 1.00 21.00 16.50 4.20 0.45 0.25 4.15 Component alignment -1.00 1.00 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2655K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602K3 Issued Date : 2011.12.21 Revised Date :2013.12.25 Page No. : 7/7 TO-92L Dimension Marking: Product Name C2655 Date Code: Year+Month □□ Year: 7→2007, 8→2008 Month: 1→1, 2→2, ‧‧‧, 9→9, A→10, B→11, C→12 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92L Plastic Package CYStek Package Code: K3 Inches DIM Min. 0.146 0.050 0.014 0.024 0.014 0.185 0.157 Max. 0.161 0.062 0.022 0.031 0.018 0.201 - Millimeters Min. Max. 3.700 4.100 1.280 1.580 0.350 0.550 0.600 0.800 0.350 0.450 4.700 5.100 4.000 - A A1 b b1 c D D1 Notes: 1.Controlling dimension: millimeters. DIM E e e1 L ϕ h Inches Min. 0.307 Max. 0.323 *0.05 0.096 0.543 0.000 0.104 0.559 0.063 0.012 *: Typical Millimeters Min. Max. 7.800 8.200 *1.270 2.440 2.640 13.800 14.200 1.600 0.000 0.300 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2655K3 CYStek Product Specification