Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 1/10 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB60P15H8 BVDSS ID@VGS=-10V, TC=25°C -150V ID@VGS=-10V, TA=25°C VGS=-10V, ID=-5.2A -5.9A 56mΩ VGS=-4.5V, ID=-5A 60mΩ RDSON(TYP) -23A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline EDFN5×6 MTB60P15H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB60P15H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB60P15H8 CYStek Product Specification Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 2/10 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-50A, VDD=-30V TC=25℃ (Note1) TC=100℃ (Note1) Total Power Dissipation TA=25°C (Note2) TA=70°C (Note2) VDS VGS Operating Junction and Storage Temperature Range ID IDSM IDM IAS EAS PD PDSM Tj, Tstg 10s Steady State -150 ±20 -23 -16.3 -5.9 -3.5 -4.7 -2.8 -50 *1,2 -50 125 100 50 5.4 1.9 3.4 1.2 -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient Symbol Rth,j-c (Note2) t≤10s Steady State Rth,j-a Typical Maximum 1 1.5 18 23 50 65 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) MTB60P15H8 *1 Min. Typ. Max. Unit -150 -0.7 - 22.4 56 60 -2.0 ±100 -1 -25 70 80 V V S nA μA mΩ mΩ Test Conditions VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VDS =-15V, ID=-5.2A VGS=±20V VDS =-120V, VGS =0V VDS =-120V, VGS =0, Tj=125°C VGS =-10V, ID=-5.2A VGS =-4.5V, ID=-5A CYStek Product Specification Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 3/10 CYStech Electronics Corp. Dynamic *4 Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 5573 245 83 121 12.2 20.8 20 35 200 82 3.8 - -0.73 38 68 -5.9 -20 -1 - pF VDS=-30V,VGS=0V, f=1MHz nC VDS=-75V, VGS=-10V, ID=-5.2A ns VDS=-75V, ID=-4.8A, VGS=-10V, RG=6Ω Ω f=1MHz A V ns nC IS=-4.2A, VGS=0V IF=-2.9A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. Recommended Soldering Footprint unit : mm MTB60P15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 4/10 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 50 -BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V,4V,3V -I D, Drain Current(A) 40 30 -VGS=2.5V 20 10 -VGS=2V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 4 8 12 16 -VDS, Drain-Source Voltage(V) -75 -50 -25 20 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=-2V VGS=-2.5V VGS=-3V VGS=-4.5V VGS=-10V -VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.8 450 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-5.2A 400 350 300 250 200 150 100 50 2.4 VGS=-10V, ID=-5.2A 2 1.6 1.2 0.8 0.4 RDS(ON) @ Tj=25°C : 56mΩ (typ.) 0 0 0 MTB60P15H8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 5/10 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000.0 Capacitance---(pF) Ciss 1000.0 C oss 100.0 Crss 1.4 1.2 ID=-1mA 1 0.8 0.6 0.4 ID=-250μA 0.2 0 10.0 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 10 RDSON Limited 10 100μs 1 1ms 10ms 100ms 1s 0.1 0.01 DC TA=25°C, VGS=-10V,Tj=150°C RθJA=65°C/W, Single Pulse -VGS, Gate-Source Voltage(V) 100 -I D, Drain Current (A) 25 50 Tj, Junction Temperature(°C) Maximum Safe Operating Area VDS=-75V ID=-5.2A 8 6 4 2 0 0.001 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 20 40 60 80 100 Qg, Total Gate Charge(nC) 120 140 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Junction Temperature 100 GFS, Forward Transfer Admittance(S) 5 -I D, Maximum Drain Current(A) 0 4 3 2 1 TA=25°C, VGS=-10V, RθJA=65°C/W 0 25 MTB60P15H8 50 75 100 125 150 Tj, Junction Temperature(°C) 175 200 10 1 VDS=-10V Pulsed Ta=25°C 0.1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 6/10 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 50 350 VDS=-10V 300 TJ(MAX) =150°C TA=25°C θ JA=65°C/W 250 Power (W) -I D, Drain Current(A) 40 30 20 200 150 100 10 50 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 0 0.0001 0.001 5 25 100 20 10 15 10 5 0.1 1 Pulse Width(s) 10 100 1000 Maximum Safe Operating Area -I D, Drain Current (A) -I D, Maximum Drain Current(A) Maximum Drain Current vs Case Temperature 0.01 VGS=-10V, RθJC=1.5°C/W 100μ s 1ms 10ms 1 100ms DC 0.1 0.01 0 RDSON Limited TC=25°C, VGS=-10V,Tj=175°C RθJC=1.5°C/W, Single Pulse 0.001 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 0.01 Single Pulse Maximum Power Dissipation 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 1000 Power Derating Curve 120 1000 900 Power (W) 700 PD, Power Dissipation(W) TJ(MAX) =175°C TC=25°C θ JC=1.5°C/W 800 600 500 400 300 200 100 80 60 40 20 100 0 0.0001 MTB60P15H8 0 0.001 0.01 0.1 Pulse Width(s) 1 10 0 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 CYStek Product Specification Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 7/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=65°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.Rθ JC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=1.5 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 1.E-04 MTB60P15H8 Single Pulse 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 8/10 Reel Dimension Carrier Tape Dimension Pin #1 MTB60P15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 9/10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB60P15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2015.03.26 Page No. : 10/10 DFN5×6 Dimension Marking : B60 P15 Device Name Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB60P15H8 CYStek Product Specification