MTE50N15H8 BVDSS

CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE50N15H8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=4.6A
RDS(ON)@VGS=6V, ID=3.9A
150V
26A
16A
4.6A
3.7A
41mΩ(typ)
47mΩ(typ)
Outline
DFN5×6
MTE50N15H8
Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device
MTE50N15H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE50N15H8
CYStek Product Specification
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=10Amps,
VDD=50V
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
Limits
(Note 1)
VDS
VGS
(Note 1)
ID
IDM
IAS
150
±30
26
16
4.6
3.7
30
15
EAS
50
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
IDSM
Unit
V
A
mJ
78
31.2
2.5
1.6
-55~+150
PD
PDSM
Tj, Tstg
W
°C
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
(Note 4)
Value
1.6
50
Unit
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
MTE50N15H8
Min.
Typ.
Max.
Unit
Test Conditions
150
2
-
0.12
11
-
4
±100
1
25
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=4.6A
VGS=±30V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
μA
CYStek Product Specification
CYStech Electronics Corp.
*RDS(ON)
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
41
47
51
65
29
7
9.7
18.4
21.6
40.8
12.4
1379
155
63
1.1
45
37
43
82
25
2069
233
95
-
0.72
0.76
49
109
4.6
30
1.2
1.2
-
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 3/ 9
mΩ
VGS =10V, ID=4.6A
VGS =6V, ID=3.9A
nC
VDS=75V, ID=4.6A, VGS=10V
ns
VDS=75V, ID=4.6A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=30V, f=1MHz
Ω
f=1MHz
A
V
IS=2A, VGS=0V
IS=4.6A, VGS=0V
ns
nC
VGS=0, IF=4.6A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTE50N15H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
10V, 9V, 8V, 7V
VGS=6.5V
20
10
VGS=6V
VGS=5V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=5.5V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=6V
VGS=10V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.5
R DS(ON) , Normalized Static DrainSource On-State Resistance
500
450
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=4.6A
400
350
300
250
200
150
100
50
VGS=10V, ID=4.6A
2.0
1.5
1.0
0.5
RDS(ON) @Tj=25°C :41mΩ typ
0.0
0
0
MTE50N15H8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C os
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=75V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=50V
6
VDS=100V
4
2
ID=..4.6A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
20
24
Total Gate Charge---Qg(nC)
28
32
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
100
ID, Maximum Drain Current(A)
RDS(ON)
Limit
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
100μs
1
1ms
10ms
100ms
0.1
TA=25°C, Tj=150°, VGS=10V
RθJA=50°C/W, Single Pulse
1s
DC
0.01
0.1
MTE50N15H8
1
10
100
VDS, Drain-Source Voltage(V)
25
20
15
10
5
VGS=10V, RθJC=1.6°C/W
0
1000
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
400
30
VDS=10V
350
TJ(MAX) =150°C
TA=25°C
R θJA=50°C/W
300
20
Power (W)
ID, Drain Current (A)
25
15
250
200
150
10
100
5
50
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.RθJA=50 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE50N15H8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTE50N15H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE50N15H8
CYStek Product Specification
Spec. No. : C931H8
Issued Date : 2015.05.25
Revised Date :
Page No. : 9/ 9
CYStech Electronics Corp.
DFN5×6 Dimension
Marking:
Device Name
Date Code
E50
N15
8-L8-Lead
ead power
pakPlastic
PlasticPackage
Package
DFN5×6
CYCYS
StekPackage
Package
Code:
Code
: H8H8
Millimeters
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 REF
4.90
5.10
1.40 REF
DIM
A
A1
b
c
D
F
Inches
Min.
Max.
0.031
0.039
0.000
0.002
0.014
0.019
0.010 REF
0.193
0.201
0.055 REF
DIM
E
e
H
L1
G
K
Millimeters
Min.
Max.
5.70
5.90
1.27 BSC
5.95
6.20
0.10
0.18
0.60 REF
4.00 REF
Inches
Min.
Max.
0.224
0.232
0.050 BSC
0.234
0.244
0.004
0.007
0.024 REF
0.157 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE50N15H8
CYStek Product Specification