Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 1/7 CYStech Electronics Corp. PNP and NPN Dual Digital Transistors HBCA143TS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy. •One DTA143T chip and one DTC143T chip in a SOT-363 package. •Mounting by SOT-323 automatic mounting machines is possible. •Mounting cost and area can be cut in half. •Transistor elements are independent, eliminating interference. •Pb-free lead plating and halogen-free package. Equivalent Circuit Outline HBCA143TS6R SOT-363 RB2 TR1 TR2 RB1 RB1=4.7kΩ , RB2=4.7 kΩ Ordering Information Device Package Shipping Marking HBCA143TS6R-0-T1-G SOT-363 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel 16 HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 2/7 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg Limits Tr1(NPN) Tr2(PNP) 50 -50 50 -50 5 -5 100 -100 200 (Note) 150 -55~+150 Unit V V V mA mW °C °C Note : 150mW per element must not be exceeded. Characteristics (Ta=25℃) •Tr1(NPN) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT 50 50 5 100 3.29 - 4.7 250 0.5 0.5 0.3 600 6.11 - V V V μA μA V kΩ MHz Test Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=5mA, IB=0.25mA VCE=5V, IC=1mA VCE=10V, IE=5mA, f=100MHz* * Transition frequency of the device •Tr2(PNP) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT -50 -50 -5 100 3.29 - 0.1 4.7 250 V V V -0.5 μA -0.5 μA -0.3 V 600 6.11 kΩ MHz Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-50V VEB=-4V IC=-5mA, IB=-0.25mA VCE=-5V, IC=-1mA VCE=-10V, IC=-5mA,f=100MHz * * Transition frequency of the device HBCA143TS6R CYStek Product Specification Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics •Tr1(NPN) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 HFE@VCE=5V 10 100 VCESAT@IC=20IB 10 0.1 1 10 100 1 10 100 Collector Current --IC(mA) Collector Current --- IC(mA) Current Gain vs Collector Current Saturation Voltage vs Collector Current •Tr2(PNP) 1000 1000 VCE=5V Current Gain---HFE Saturation Voltage---(mV) VCE(SAT)@IC=20IB 100 10 100 0.1 HBCA143TS6R 1 10 Collector Current---IC(mA) 100 0.1 1 10 100 Collector Current---IC(mA) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 4/7 Typical Characteristics (Cont.) Power Derating Curves Power Dissipation---P D(mW) 250 200 Dual Single 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Recommended Soldering Footprint HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 5/7 Reel Dimension Carrier Tape Dimension Pin #1 HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : 2013.09.06 Page No. : 7/7 SOT-363 Dimension Marking: ● Date Code: Year + Month Year : 6→2006, 7→2007,…, etc Month : 1→Jan 2→Feb, …, 9→ Sep, A→Oct, B →Nov, C→Dec 16 Device Code 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBCA143TS6R CYStek Product Specification