CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 1/7 BVCEO IC RCESAT(typ) BTB1424AM3 -50V -3A 0.12Ω Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.12V(typ) @IC=-1A, IB=-50mA. • Complementary to BTD2150AM3 • Pb-free lead plating and halogen-free package Symbol Outline BTB1424AM3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Power Dissipation ESD susceptibility Operating Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits -50 -50 -6 -3 -5 1.5 (Note 1) 2.1 (Note 2) 8000 (Note 3 ) -55~+150 -55~+150 Unit V V V A W V °C °C Note 1: When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition 2: When mounted on 50mm×50mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition 3 : Human body model, 1.5kΩ in series with 100pF BTB1424AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *RCE(sat) *VBE(sat) *hFE fT Cob Min. -50 -50 -6 -0.5 180 - Typ. -0.12 -0.2 0.12 -1 240 35 Max. -0.1 -0.1 -0.35 -0.35 0.35 -1.2 560 - Unit V V V μA μA V V Ω V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-20V VEB=-5V IC=-1A, IB=-50mA IC=-2A, IB=-100mA IC=-1A, IB=-50mA IC=-2A, IB=-200mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE Rank R S Range 180 ~ 390 270 ~ 560 Ordering Information Device HFE Rank BTB1424AM3-R-T2-G R BTB1424AM3-S-T2-G S Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Recommended soldering footprint BTB1424AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 1.4 1mA 0.25 0.2 0.15 500uA 400uA 300uA 0.1 0.05 5mA 1.2 Collector Current---IC(A) Collector Current---IC(A) 0.3 200uA IB=100uA 1 0.8 0.6 2.5mA 2mA 1.5mA 0.4 1mA IB=500uA 0.2 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics 6 Emitter Grounded Output Characteristics 4 6 50mA Collector Current---IC(A) Collector Current---IC(A) 20mA 3 10mA 2 8mA 6mA 1 4mA IB=2mA 0 5 4 20mA 3 15mA 10mA 2 IB=5mA 1 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 Current Gain vs Collector Current 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 1000 10000 VCESAT Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V 1000 IC=150IB IC=100IB 100 IC=50IB IC=20IB 10 10 1 10 100 1000 Collector Current---IC(mA) BTB1424AM3 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Capacitance vs Reverse-biased Voltage 10000 1000 Capacitance---(pF) Saturation Voltage---(mV) VBESAT IC=10IB 1000 IC=50IB Cib 100 Cob 10 100 1 10 100 1000 Collector Current---IC(mA) 10000 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curve Power Dissipation---PD(W) 2.5 See note 1 on page 1 2 1.5 See note 2 on page 1 1 0.5 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Recommended Storage Condition: Temperature : 10~ 35 °C Humidity : 30~ 60% RH BTB1424AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 5/7 Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Recommended wave soldering condition Product Pb-free devices BTB1424AM3 Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 6/7 Reel Dimension Carrier Tape Dimension BTB1424AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817M3 Issued Date : 2007.01.10 Revised Date : 2013.08.12 Page No. : 7/7 SOT-89 Dimension Marking: A 2 1 3 Wafer code Product Code H C month code: 1~9, A,B,C HFE rank D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424AM3 CYStek Product Specification