A25LS512A Series - AMIC Technology

A25LS512A Series
512Kbit Low Voltage, Serial Flash Memory
With 100MHz Uniform 4KB Sectors
Document Title
512Kbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors
Revision History
Rev. No.
History
Issue Date
Remark
1.0
Final version release
October 16, 2012
1.1
Change 8-pin USON(2*3mm) package outline dimensions
November 14, 2014
(November, 2014, Version 1.1)
Final
AMIC Technology Corp.
A25LS512A Series
512Kbit Low Voltage, Serial Flash Memory
With 100MHz Uniform 4KB Sectors
FEATURES
„ Family of Serial Flash Memories
- A25LS512A: 512K-bit /64K-byte
„ Flexible Sector Architecture with 4KB sectors
- Sector Erase (4K-bytes) in 0.2s (typical)
- Block Erase (64K-bytes) in 0.5s (typical)
„ Page Program (up to 256 Bytes) in 2ms (typical)
„ 2.7 to 3.6V Single Supply Voltage
„ SPI Bus Compatible Serial Interface
„ 100MHz Clock Rate (maximum)
„ Electronic Signatures
- JEDEC Standard Two-Byte Signature
A25LS512A (3010h)
- RES Instruction, One-Byte, Signature, for backward
compatibility
A25LS512A (05h)
„ Package options
- 8-pin SOP (150/209mil), 8-pin DIP (300mil), 8-pin TSSOP ,
8-pin USON (2*3mm) and 8-pin WSON (6*5mm)
- All Pb-free (Lead-free) products are RoHS2.0 compliant
GENERAL DESCRIPTION
The A25LS512A is 512K bit Serial Flash Memory, with
advanced write protection mechanisms, accessed by a high
speed SPI-compatible bus.
Each sector is composed of 16 pages. Each page is 256 bytes
wide. Thus, the whole memory can be viewed as consisting of
512 pages, or 65,536 bytes.
The whole memory can be erased using the Chip Erase
instruction, a block at a time, using Block Erase instruction, or a
sector at a time, using the Sector Erase instruction.
The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The memory is organized as one block, containing 16 sectors.
Pin Configurations
„ SOP8 Connections
„ DIP8 Connections
A25LS512A
A25LS512A
S
DO
W
VSS
(November, 2014, Version 1.1)
1
2
3
4
8
7
6
5
VCC
S
DO
W
VSS
HOLD
C
DIO
1
1
2
3
4
8
7
6
5
VCC
HOLD
C
DIO
AMIC Technology Corp.
A25LS512A Series
Pin Configurations (Continued)
„ TSSOP8 Connections
„ USON8/WSON8 Connections
A25LS512A
S
DO
W
VSS
1
2
3
4
A25LS512A
S
DO
W
VSS
8 VCC
7 HOLD
6 C
5 DIO
1
2
3
4
8
7
6
5
VCC
HOLD
C
DIO
Block Diagram
HOLD
W
Control Logic
High Voltage
Generator
S
C
DIO
I/O Shift Register
DO
Address register
and Counter
256 Byte
Data Buffer
Status
Register
FFFFh
Y Decoder
Size of the
memory area
000FFh
00000h
256 Byte (Page Size)
X Decoder
(November, 2014, Version 1.1)
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AMIC Technology Corp.
A25LS512A Series
Pin Descriptions
Pin No.
Logic Symbol
Description
C
Serial Clock
DIO
Serial Data Input 1
DO
Serial Data Output 2
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
VCC
DIO
DO
C
S
A25LS512A
W
HOLD
VSS
Notes:
1. The DIO is also used as an output pin when the Fast
Read Dual Output instruction and the Fast Read Dual
Input-Output instruction are executed.
2. The DO is also used as an input pin when the Fast
Read Dual Input-Output instruction is executed.
SIGNAL DESCRIPTION
Serial Data Output (DO). This output signal is used to
transfer data serially out of the device. Data is shifted out on
the falling edge of Serial Clock (C).
The DO pin is also used as an input pin when the Fast Read
Dual Input-Output instruction is executed.
Serial Data Input (DIO). This input signal is used to transfer
data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are
latched on the rising edge of Serial Clock (C).
The DIO pin is also used as an output pin when the Fast
Read Dual Output instruction and the Fast Read Dual
Input-Output instruction are executed.
Serial Clock (C). This input signal provides the timing of the
serial interface. Instructions, addresses, or data present at
Serial Data Input (DIO) are latched on the rising edge of
Serial Clock (C). Data on Serial Data Output (DO) changes
after the falling edge of Serial Clock (C).
Chip Select ( S ). When this input signal is High, the device
is deselected and Serial Data Output (DO) is at high
impedance. Unless an internal Program, Erase or Write
(November, 2014, Version 1.1)
Status Register cycle is in progress, the device will be in the
Standby mode (this is not the Deep Power-down mode).
Driving Chip Select ( S ) Low enables the device, placing it in
the active power mode.
After Power-up, a falling edge on Chip Select ( S ) is required
prior to the start of any instruction.
Hold ( HOLD ). The Hold ( HOLD ) signal is used to pause
any serial communications with the device without
deselecting the device.
During the Hold condition, the Serial Data Output (DO) is
high impedance, and Serial Data Input (DIO) and Serial
Clock (C) are Don’t Care. To start the Hold condition, the
device must be selected, with Chip Select ( S ) driven Low.
Write Protect ( W ). The main purpose of this input signal is
to freeze the size of the area of memory that is protected
against program or erase instructions (as specified by the
values in the BP2, BP1, and BP0 bits of the Status Register).
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AMIC Technology Corp.
A25LS512A Series
SPI MODES
falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 2,
is the clock polarity when the bus master is in Stand-by mode
and not transferring data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
These devices can be driven by a microcontroller with its SPI
peripheral running in either of the two following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising
edge of Serial Clock (C), and output data is available from the
Figure 1. Bus Master and Memory Devices on the SPI Bus
SPI Interface with
(CPOL, CPHA)
= (0, 0) or (1, 1)
SDO
SDI
SCK
C DO
DIO
C DO
DIO
C DO
DIO
Bus Master
(ST6, ST7, ST9,
ST10, Other)
CS3
CS2
SPI Memory
Device
SPI Memory
Device
SPI Memory
Device
S
S
S
CS1
W HOLD
W HOLD
W HOLD
Note: The Write Protect ( W ) and Hold ( HOLD ) signals should be driven, High or Low as appropriate.
Figure 2. SPI Modes Supported
CPOL
CPHA
0
0
C
1
1
C
DIO
MSB
DO
(November, 2014, Version 1.1)
MSB
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AMIC Technology Corp.
A25LS512A Series
OPERATING FEATURES
Page Programming
Status Register
To program one data byte, two instructions are required: Write
Enable (WREN), which is one byte, and a Page Program (PP)
sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction
allows up to 256 bytes to be programmed at a time (changing
bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
The Status Register contains a number of status and control
bits that can be read or set (as appropriate) by specific
instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether
the memory is busy with a Write Status Register, Program or
Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the
status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits
are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions.
SRWD bit. The Status Register Write Disable (SRWD) bit is
operated in conjunction with the Write Protect ( W ) signal.
The Status Register Write Disable (SRWD) bit and Write
Protect ( W ) signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits of the
Status Register (SRWD, BP2, BP1, BP0) become read-only
bits.
Sector Erase, Block Erase, and Chip Erase
The Page Program (PP) instruction allows bits to be reset
from 1 to 0. Before this can be applied, the bytes of memory
need to have been erased to all 1s (FFh). This can be
achieved, a sector at a time, using the Sector Erase (SE)
instruction, a block at a time, using the Block Erase (BE)
instruction, or throughout the entire memory, using the Chip
Erase (CE) instruction. This starts an internal Erase cycle (of
duration tSE, tBE, or tCE).
The Erase instruction must be preceded by a Write Enable
(WREN) instruction.
Protection Modes
The environments where non-volatile memory devices are
used can be very noisy. No SPI device can operate correctly
in the presence of excessive noise. To help combat this, the
A25LS512A boasts the following data protection mechanisms:
„ Power-On Reset and an internal timer (tPUW) can provide
protection against inadvertent changes while the power
supply is outside the operating specification.
„ Program, Erase and Write Status Register instructions are
checked that they consist of a number of clock pulses that
is a multiple of eight, before they are accepted for
execution.
„ All instructions that modify data must be preceded by a
Write Enable (WREN) instruction to set the Write Enable
Latch (WEL) bit. This bit is returned to its reset state by
the following events:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
„ The Block Protect (BP2, BP1, BP0) bits allow part of the
memory to be configured as read-only. This is the
Software Protected Mode (SPM).
„ The Write Protect ( W ) signal allows the Block Protect
(BP2, BP1, BP0) bits and Status Register Write Disable
(SRWD) bit to be protected. This is the Hardware
Protected Mode (HPM).
„ In addition to the low power consumption feature, the
Deep Power-down mode offers extra software protection
from inadvertent Write, Program and Erase instructions,
as all instructions are ignored except one particular
instruction (the Release from Deep Power-down
instruction).
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register
(WRSR), Program (PP) or Erase (SE, BE, or CE) can be
achieved by not waiting for the worst case delay (tW, tPP, tSE,
tBE, tCE). The Write In Progress (WIP) bit is provided in the
Status Register so that the application program can monitor
its value, polling it to establish when the previous Write cycle,
Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select ( S ) is Low, the device is enabled, and in
the Active Power mode.
When Chip Select ( S ) is High, the device is disabled, but
could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The
device then goes in to the Stand-by Power mode. The device
consumption drops to ICC1.
The Deep Power-down mode is entered when the specific
instruction (the Deep Power-down Mode (DP) instruction) is
executed. The device consumption drops further to ICC2. The
device remains in this mode until another specific instruction
(the Release from Deep Power-down Mode and Read
Electronic Signature (RES) instruction) is executed.
All other instructions are ignored while the device is in the
Deep Power-down mode. This can be used as an extra
software protection mechanism, when the device is not in
active use, to protect the device from inadvertent Write,
Program or Erase instructions.
(November, 2014, Version 1.1)
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AMIC Technology Corp.
A25LS512A Series
Table 1. Protected Area Sizes
A25LS512A
Status Register Content
BP2 Bit
BP1 Bit
X
0
X
X
Memory Content
BP0 Bit
Protected Area
Unprotected Area
0
None
All block
X
1
All block
None
1
X
All block
None
1
Note: 1. The device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0
(November, 2014, Version 1.1)
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AMIC Technology Corp.
A25LS512A Series
Hold Condition
Serial Clock (C) next goes Low. This is shown in Figure 3.
During the Hold condition, the Serial Data Output (DO) is high
impedance, and Serial Data Input (DIO) and Serial Clock (C)
are Don’t Care.
Normally, the device is kept selected, with Chip Select ( S )
driven Low, for the whole duration of the Hold condition. This
is to ensure that the state of the internal logic remains
unchanged from the moment of entering the Hold condition.
If Chip Select ( S ) goes High while the device is in the Hold
condition, this has the effect of resetting the internal logic of
the device. To restart communication with the device, it is
necessary to drive Hold ( HOLD ) High, and then to drive
The Hold ( HOLD ) signal is used to pause any serial
communications with the device without resetting the clocking
sequence. However, taking this signal Low does not
terminate any Write Status Register, Program or Erase cycle
that is currently in progress.
To enter the Hold condition, the device must be selected, with
Chip Select ( S ) Low.
The Hold condition starts on the falling edge of the Hold
( HOLD ) signal, provided that this coincides with Serial Clock
(C) being Low (as shown in Figure 3.).
The Hold condition ends on the rising edge of the Hold
( HOLD ) signal, provided that this coincides with Serial Clock
(C) being Low.
If the falling edge does not coincide with Serial Clock (C)
being Low, the Hold condition starts after Serial Clock (C)
next goes Low. Similarly, if the rising edge does not coincide
with Serial Clock (C) being Low, the Hold condition ends after
Chip Select ( S ) Low. This prevents the device from going
back to the Hold condition.
Figure 3. Hold Condition Activation
C
HOLD
Hold
Condition
(standard use)
(November, 2014, Version 1.1)
7
Hold
Condition
(non-standard use)
AMIC Technology Corp.
A25LS512A Series
MEMORY ORGANIZATION
The memory is organized as:
„ 262,144 bytes (8 bits each)
„ 4 64-Kbytes blocks
„ 64 4-Kbytes sectors
„ 1024 pages (256 bytes each)
Each page can be individually programmed (bits are
programmed from 1 to 0). The device is Sector, Block, or Chip
Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 2. Memory Organization
A25LS512A Address Table
Block
Sector
Address Range
15
…
…
(November, 2014, Version 1.1)
FFFFh
…
0
F000h
3
3000h
3FFFh
2
2000h
2FFFh
1
1000h
1FFFh
0
0000h
0FFFh
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AMIC Technology Corp.
A25LS512A Series
INSTRUCTIONS
sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block
Erase (BE), Chip Erase (CE), Write Status Register (WRSR),
Write Enable (WREN), Write Disable (WRDI) or Deep
Power-down (DP) instruction, Chip Select ( S ) must be driven
High exactly at a byte boundary, otherwise the instruction is
rejected, and is not executed. That is, Chip Select ( S ) must
driven High when the number of clock pulses after Chip Select
( S ) being driven Low is an exact multiple of eight.
All instructions, addresses and data are shifted in and out of
the device, most significant bit first.
Serial Data Input (DIO) is sampled on the first rising edge of
Serial Clock (C) after Chip Select ( S ) is driven Low. Then, the
one-byte instruction code must be shifted in to the device,
most significant bit first, on Serial Data Input (DIO), each bit
being latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by
address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at
Higher Speed (Fast_Read), Read Status Register (RDSR) or
Release from Deep Power-down, Read Device Identification
and Read Electronic Signature (RES) instruction, the shifted-in
instruction sequence is followed by a data-out sequence. Chip
Select ( S ) can be driven High after any bit of the data-out
All attempts to access the memory array during a Write Status
Register cycle, Program cycle or Erase cycle are ignored, and
the internal Write Status Register cycle, Program cycle or
Erase cycle continues unaffected.
Table 3. Instruction Set
Instruction
One-byte
Instruction Code
Description
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDSR
Read Status Register
0000 0101
05h
0
0
1 to ∞
WRSR
Write Status Register
0000 0001
01h
0
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to ∞
FAST_READ
Read Data Bytes at Higher Speed
0000 1011
0Bh
3
1
1 to ∞
FAST_READ_DUAL
_OUTPUT
Read Data Bytes at Higher Speed by
Dual Output (1)
00111011
3Bh
3
1
1 to ∞
FAST_READ_DUAL
_INPUT-OUTPUT
Read Data Bytes at Higher Speed by
Dual Input and Dual Output (1)
10111011
BBh
3(2)
1(2)
1 to ∞
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
0010 0000
20h
3
0
0
BE
Block Erase
1101 1000
D8h
3
0
0
CE
Chip Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RDID
Read Device Identification
1001 1111
9Fh
0
0
1 to ∞
REMS
Read Electronic Manufacturer & Device
Identification
1001 0000
90h
(3)
2
1 to ∞
1010 1011
ABh
0
3
1 to ∞
0
0
0
RES
Release from Deep Power-down, and
Read Electronic Signature
1
Release from Deep Power-down
Note: (1) DIO = (D6, D4, D2, D0)
DO = (D7, D5, D3, D1)
(2) Dual Input, DIO = (A22, A20, A18, ………, A6, A4, A2, A0)
DO = (A23, A21, A19, …….., A7, A5, A3, A1)
(3) ADD= (00h) will output manufacturer’s ID first and ADD=(01h) will output device ID first
(November, 2014, Version 1.1)
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AMIC Technology Corp.
A25LS512A Series
Write Enable (WREN)
The Write Enable (WREN) instruction is entered by driving
Chip Select ( S ) Low, sending the instruction code, and then
The Write Enable (WREN) instruction (Figure 4.) sets the
Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every
Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instruction.
driving Chip Select ( S ) High.
Figure 4. Write Enable (WREN) Instruction Sequence
S
0
1
2 3
4 5
6
7
C
Instruction
DIO
DO
High Impedance
Write Disable (WRDI)
﹣ Power-up
The Write Disable (WRDI) instruction (Figure 5.) resets the
﹣
﹣
﹣
﹣
﹣
Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip
Select ( S ) Low, sending the instruction code, and then driving
Chip The Write Enable Latch (WEL) bit is reset under the
following conditions:
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Figure 5. Write Disable (WRDI) Instruction Sequence
S
0
1
2 3
4 5
6
7
C
Instruction
DIO
DO
(November, 2014, Version 1.1)
High Impedance
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AMIC Technology Corp.
A25LS512A Series
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the
Status Register to be read. The Status Register may be read
at any time, even while a Program, Erase or Write Status
Register cycle is in progress. When one of these cycles is in
progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is
also possible to read the Status Register continuously, as
shown in Figure 6.
Table 4. Status Register Format
b6
0
b7
SRWD
b5
0
b4
BP2
b3
BP1
b2
BP0
b1
WEL
b0
WIP
Status Register
Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
The status and control bits of the Status Register are as
follows:
WIP bit. The Write In Progress (WIP) bit indicates whether
the memory is busy with a Write Status Register, Program or
Erase cycle. When set to 1, such a cycle is in progress, when
reset to 0 no such cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the
status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal
Write Enable Latch is reset and no Write Status Register,
Program or Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits
are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions.
These bits are written with the Write Status Register (WRSR)
instruction. When one or more of the Block Protect (BP2,
BP1, BP0) bits is set to 1, the relevant memory area (as
defined in Table 1.) becomes protected against Page
Program (PP), Sector Erase (SE), and Block Erase (BE)
instructions. The Block Protect (BP2, BP1, BP0) bits can be
written provided that the Hardware Protected mode has not
been set. The Chip Erase (CE) instruction is executed if, and
only if, all Block Protect (BP2, BP1, BP0) bits are 0.
SRWD bit. The Status Register Write Disable (SRWD) bit is
operated in conjunction with the Write Protect ( W ) signal.
The Status Register Write Disable (SRWD) bit and Write
Protect ( W ) signal allow the device to be put in the
Hardware Protected mode (when the Status Register Write
Disable (SRWD) bit is set to 1, and Write Protect ( W ) is
driven Low). In this mode, the non-volatile bits of the Status
Register (SRWD, BP2, BP1, BP0) become read-only bits and
the Write Status Register (WRSR) instruction is no longer
accepted for execution.
Figure 6. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
9 10 11 12 13 14 15
C
Instruction
DIO
Status Register Out
DO
High Impedance
(November, 2014, Version 1.1)
7 6 5
MSB
4
3 2 1
11
Status Register Out
0
7 6
MSB
5
4 3
2 1
0
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AMIC Technology Corp.
A25LS512A Series
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new
values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write Enable
(WREN) instruction has been decoded and executed, the
device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by
Write Status Register cycle is in progress, the Status
Register may still be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Write Status Register cycle, and is 0
when it is completed. When the cycle is completed, the
Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the
user to change the values of the Block Protect (BP2, BP1,
BP0) bits, to define the size of the area that is to be treated
as read-only, as defined in Table 1. The Write Status
Register (WRSR) instruction also allows the user to set or
reset the Status Register Write Disable (SRWD) bit in
accordance with the Write Protect ( W ) signal. The Status
Register Write Disable (SRWD) bit and Write Protect ( W )
signal allow the device to be put in the Hardware Protected
Mode (HPM). The Write Status Register (WRSR) instruction
is not executed once the Hardware Protected Mode (HPM)
is entered.
driving Chip Select ( S ) Low, followed by the instruction
code and the data byte on Serial Data Input (DIO).
The instruction sequence is shown in Figure 7. The Write
Status Register (WRSR) instruction has no effect on b6, b5,
b1 and b0 of the Status Register. b6 and b5 are always read
as 0.
Chip Select ( S ) must be driven High after the eighth bit of
the data byte has been latched in. If not, the Write Status
Register (WRSR) instruction is not executed. As soon as
Chip Select ( S ) is driven High, the self-timed Write Status
Register cycle (whose duration is tW) is initiated. While the
Figure 7. Write Status Register (WRSR) Instruction Sequence
S
0
1
2 3 4
5 6
7 8
9 10 11 12 13 14 15
C
Status
Register In
Instruction
7
DIO
DO
(November, 2014, Version 1.1)
6 5
4
3 2 1
0
MSB
High Impedance
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AMIC Technology Corp.
A25LS512A Series
Table 5. Protection Modes
Signal
SRWD
Bit
1
0
W
0
0
1
1
0
1
Mode
Write Protection of the Status
Register
Memory Content
Protected Area
1
Unprotected Area1
Software
Protected
(SPM)
Status Register is Writable (if the
WREN instruction has set the WEL
bit).
The values in the SRWD, BP2, BP1,
and BP0 bits can be changed
Protected against Page
Program, Sector Erase,
Block Erase, and Chip
Erase
Ready to accept Page
Program, Sector Erase,
and Block Erase
instructions
Hardware
Protected
(HPM)
Status Register is Hardware write
protected.
The values in the SRWD, BP2, BP1,
and BP0 bits cannot be changed
Protected against Page
Program, Sector Erase,
Block Erase, and Chip
Erase
Ready to accept Page
Program, Sector Erase,
and Block Erase
instructions
Note: 1. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in Table 1.
The protection features of the device are summarized in Table
5.
When the Status Register Write Disable (SRWD) bit of the
Status Register is 0 (its initial delivery state), it is possible to
write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction, regardless of the whether Write Protect
( W ) is driven High or Low.
When the Status Register Write Disable (SRWD) bit of the
Status Register is set to 1, two cases need to be considered,
depending on the state of Write Protect ( W ):
­ If Write Protect ( W ) is driven High, it is possible to write
to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write
Enable (WREN) instruction.
­ If Write Protect (W) is driven Low, it is not possible to
write to the Status Register even if the Write Enable Latch
(WEL) bit has previously been set by a Write Enable
(WREN) instruction. (Attempts to write to the Status
(November, 2014, Version 1.1)
Register are rejected, and are not accepted for execution).
As a consequence, all the data bytes in the memory area
that are software protected (SPM) by the Block Protect
(BP2, BP1, BP0) bits of the Status Register, are also
hardware protected against data modification.
Regardless of the order of the two events, the Hardware
Protected Mode (HPM) can be entered:
by setting the Status Register Write Disable (SRWD) bit
after driving Write Protect ( W ) Low
­ or by driving Write Protect ( W ) Low after setting the
Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM)
once entered is to pull Write Protect ( W ) High.
­
If Write Protect ( W ) is permanently tied High, the Hardware
Protected Mode (HPM) can never be activated, and only the
Software Protected Mode (SPM), using the Block Protect
(BP2, BP1, BP0) bits of the Status Register, can be used.
13
AMIC Technology Corp.
A25LS512A Series
Read Data Bytes (READ)
The device is first selected by driving Chip Select ( S ) Low.
The instruction code for the Read Data Bytes (READ)
instruction is followed by a 3-byte address (A23-A0), each bit
being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on
Serial Data Output (DO), each bit being shifted out, at a
maximum frequency fR, during the falling edge of Serial Clock
(C).
The instruction sequence is shown in Figure 8. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ)
instruction. When the highest address is reached, the
address counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by
driving Chip Select ( S ) High. Chip Select ( S ) can be driven
High at any time during data output. Any Read Data Bytes
(READ) instruction, while an Erase, Program or Write cycle is
in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 8. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
DIO
3
2
1
0
MSB
DO
Data Out 2
Data Out 1
High Impedance
7 6
5
4
3
2
1
0
7
MSB
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
14
AMIC Technology Corp.
A25LS512A Series
Read Data Bytes at Higher Speed (FAST_READ)
Speed (FAST_READ) instruction. When the highest address
is reached, the address counter rolls over to 000000h,
allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select ( S ) Low.
The instruction code for the Read Data Bytes at Higher
Speed (FAST_READ) instruction is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being
latched-in during the rising edge of Serial Clock (C). Then the
memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum
frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 9. The first byte
addressed can be at any location. The address is
automatically incremented to the next higher address after
each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher
instruction is terminated by driving Chip Select ( S ) High.
Chip Select ( S ) can be driven High at any time during data
output. Any Read Data Bytes at Higher Speed (FAST_READ)
instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle
that is in progress.
Figure 9. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
28 29 30 31
9 10
C
Instruction
24-Bit Address
23 22 21
DIO
2
3
1
0
MSB
High Impedance
DO
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
DIO
7 6
5
4
3
2 1
0
Data Out 2
Data Out 1
DO
7 6
5
4
MSB
3
2
1
0
7 6
5
4
3
2
1
0
7
MSB
MSB
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
15
AMIC Technology Corp.
A25LS512A Series
Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the
Fast_Read (0Bh) instruction except the data is output on two
pins, DO and DIO, instead of just DO. This allows data to be
transferred from the A25LS512A at twice the rate of standard
SPI devices.
Similar to the Fast Read instruction, the Fast Read Dual
Output instruction can operate at the highest possible
frequency of fC (See AC Characteristics). This is
accomplished by adding eight “dummy” clocks after the
24-bit address as shown in figure 10. The dummy clocks
allow the device’s internal circuits additional time for setting
up the initial address. The input data during the dummy
clocks is “don’t care”. However, the DIO pin should be
high-impedance prior to the falling edge of the first data out
clock.
Figure 10. FAST_READ_DUAL_OUTPUT Instruction Sequence and Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31
C
Instruction
24-Bit Address
23 22 21
DIO
2
3
1
0
MSB
High Impedance
DO
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
DIO switches from input to output
Dummy Byte
DIO
7 6
DO
5
4
3
2 1
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7 5
3
1
7
5
3
1
7 5
3
1
7
5
3
1
MSB
MSB
Data Out 1
Data Out 2
Data Out 3
7
MSB
Data Out 4
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
16
AMIC Technology Corp.
A25LS512A Series
Fast Read Dual Input-Output (BBh)
The Fast Read Dual Input-Output (BBh) instruction is similar
to the Fast_Read (0Bh) instruction except the data is input
and output on two pins, DO and DIO, instead of just DO. This
allows data to be transferred from the A25LS512A at twice
the rate of standard SPI devices.
Similar to the Fast Read instruction, the Fast Read Dual
Output instruction can operate at the highest possible
frequency of fC (See AC Characteristics). This is
accomplished by adding four “dummy” clocks after the 24-bit
address as shown in figure 11. The dummy clocks allow the
device’s internal circuits additional time for setting up the
initial address. The input data during the dummy clocks is
“don’t care”. However, the DIO and DO pins should be
high-impedance prior to the falling edge of the first data out
clock.
Figure 11. FAST_READ_DUAL_INPUT-OUTPUT Instruction Sequence and Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
9 10
16 17 18 19
C
Instruction
24-Bit Address
22 20 18
DIO
6
4
2
0
7
5
3
1
MSB
DO
High Impedance
23 21 19
S
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
C
Dummy
Byte
DIO
3
2
DO
1
DIO switches from input to output
0
6
4
2
7 5 3
MSB
Data Out 1
0 6
1
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7 5
3
1
7
5
3
1
7 5
3
1
7
5
3
1
MSB
MSB
Data Out 2
Data Out 3
Data Out 4
7
MSB
Data Out 5
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
17
AMIC Technology Corp.
A25LS512A Series
Page Program (PP)
The Page Program (PP) instruction allows bytes to be
programmed in the memory (changing bits from 1 to 0).
Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
programmed correctly within the same page. If less than 256
Data bytes are sent to device, they are correctly programmed
at the requested addresses without having any effects on the
other bytes of the same page.
Chip Select ( S ) must be driven High after the eighth bit of the
last data byte has been latched in, otherwise the Page
Program (PP) instruction is not executed.
The Page Program (PP) instruction is entered by driving Chip
Select ( S ) Low, followed by the instruction code, three
address bytes and at least one data byte on Serial Data Input
(DIO). If the 8 least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the
same page (from the address whose 8 least significant bits
As soon as Chip Select ( S ) is driven High, the self-timed
Page Program cycle (whose duration is tPP) is initiated. While
the Page Program cycle is in progress, the Status Register
may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed
Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
(A7-A0) are all zero). Chip Select ( S ) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in Figure 12. If more than
256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be
A Page Program (PP) instruction applied to a page which is
protected by the Block Protect (BP2, BP1, BP0) bits (see
table 1and table 2.) is not executed.
Figure 12. Page Program (PP) Instruction Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
Data Byte 1
24-Bit Address
23 22 21
3
2
1
MSB
0
5
7 6
4
3
0
1
2
2078
2079
2077
2076
2075
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2074
S
2073
MSB
2072
DIO
1
0
C
Data Byte 2
DIO
7 6
MSB
5
4
3
2
Data Byte 3
1
0
7 6
MSB
5
4
3
2
Data Byte 256
1
0
7 6
5
4
3
2
MSB
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
18
AMIC Technology Corp.
A25LS512A Series
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits
inside the chosen sector. Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been
decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip
instruction is not executed. As soon as Chip Select ( S ) is
driven High, the self-timed Sector Erase cycle (whose
duration is tSE) is initiated. While the Sector Erase cycle is in
progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Sector Erase cycle, and is
0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is
protected by the Block Protect (BP2, BP1, BP0) bits (see
table 1and table 2.) is not executed.
Select ( S ) Low, followed by the instruction code on Serial
Data Input (DIO). Chip Select ( S ) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 13. Chip Select
( S ) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Sector Erase
Figure 13. Sector Erase (SE) Instruction Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31
C
Instruction
DIO
24-Bit Address
23 22 21
3
2
1
0
MSB
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
19
AMIC Technology Corp.
A25LS512A Series
Block Erase (BE)
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside
the chosen block. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Block Erase (BE) instruction is entered by driving Chip
instruction is not executed. As soon as Chip Select ( S ) is
driven High, the self-timed Block Erase cycle (whose duration
is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit
is 1 during the self-timed Block Erase cycle, and is 0 when it
is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a page which is
protected by the Block Protect (BP2, BP1, BP0) bits (see
table 1and table 2.) is not executed.
Select ( S ) Low, followed by the instruction code on Serial
Data Input (DIO). Chip Select ( S ) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 14. Chip Select
( S ) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Block Erase
Figure 14. Block Erase (BE) Instruction Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31
C
Instruction
DIO
24-Bit Address
23 22 21
3
2
1
0
MSB
Note: Address bits A23 to A16 are Don’t Care, for A25LS512A.
(November, 2014, Version 1.1)
20
AMIC Technology Corp.
A25LS512A Series
Chip Erase (CE)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before
it can be accepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip
is not executed. As soon as Chip Select ( S ) is driven High,
the self-timed Chip Erase cycle (whose duration is tCE) is
initiated. While the Chip Erase cycle is in progress, the Status
Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during
the self-timed Chip Erase cycle, and is 0 when it is completed.
At some unspecified time before the cycle is completed, the
Write Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if all Block
Protect (BP2, BP1, BP0) bits are 0. The Chip Erase (CE)
instruction is ignored if one, or more, blocks are protected.
Select ( S ) Low, followed by the instruction code on Serial
Data Input (DIO). Chip Select ( S ) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 15. Chip Select
( S ) must be driven High after the eighth bit of the instruction
code has been latched in, otherwise the Bulk Erase instruction
Figure 15. Chip Erase (CE) Instruction Sequence
S
0
1
2
3
4 5
6
7
C
Instruction
DIO
(November, 2014, Version 1.1)
21
AMIC Technology Corp.
A25LS512A Series
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only
way to put the device in the lowest consumption mode (the
Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in
active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
The Deep Power-down mode automatically stops at
Power-down, and the device always Powers-up in the
Standby mode.
The Deep Power-down (DP) instruction is entered by driving
Chip Select ( S ) Low, followed by the instruction code on
Serial Data Input (DIO). Chip Select ( S ) must be driven Low
for the entire duration of the sequence. The instruction
sequence is shown in Figure 16.
Driving Chip Select ( S ) High deselects the device, and puts
the device in the Standby mode (if there is no internal cycle
currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be
entered by executing the Deep Power-down (DP) instruction,
to reduce the standby current (from ICC1 to ICC2, as specified in
DC Characteristics Table.).
Chip Select ( S ) must be driven High after the eighth bit of the
instruction code has been latched in, otherwise the Deep
Power-down (DP) instruction is not executed. As soon as
Chip Select ( S ) is driven High, it requires a delay of tDP
before the supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase,
Program or Write cycle is in progress, is rejected without
having any effects on the cycle that is in progress.
Once the device has entered the Deep Power-down mode, all
instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES) instruction.
This releases the device from this mode. The Release from
Deep Power-down and Read Electronic Signature (RES)
instruction also allows the Electronic Signature of the device
to be output on Serial Data Output (DO).
Figure 16. Deep Power-down (DP) Instruction Sequence
S
0 1
2
3
4 5
6
tDP
7
C
Instruction
DIO
Stand-by Mode
(November, 2014, Version 1.1)
22
Deep Power-down Mode
AMIC Technology Corp.
A25LS512A Series
Read Device Identification (RDID)
This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data Output (DO),
each bit being shifted out during the falling edge of Serial
Clock (C).
The Read Identification (RDID) instruction allows the 8-bit
manufacturer identification code to be read, followed by two
bytes of device identification. The manufacturer identification
is assigned by JEDEC, and has the value 37h. The device
identification is assigned by the device manufacturer, and
indicates the memory in the first bytes (30h), and the memory
capacity of the device in the second byte.
Any Read Identification (RDID) instruction while an Erase, or
Program cycle is in progress, is not decoded, and has no
effect on the cycle that is in progress.
The instruction sequence is shown in Figure 17. The Read
Identification (RDID) instruction is terminated by driving Chip
Select ( S ) High at any time during data output.
When Chip Select ( S ) is driven High, the device is put in the
Stand-by Power mode. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
The device is first selected by driving Chip Select ( S ) Low.
Then, the 8-bit instruction code for the instruction is shifted in.
Table 6. Read Identification (READ_ID) Data-Out Sequence
Manufacture Identification
Device Identification
Manufacture ID
Memory Type
Memory Capacity
C2h
20h
10h
Figure 17. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
S
0 1
2
3
4
5
6
7
8
9 10
13 14 15 16 17 18
21 22 23 24 25 26
29 30 31
C
Instruction
DIO
DO
23
High Impedance
(November, 2014, Version 1.1)
22 21
18
17 16 15
Manufacture ID
14 13
10
9
Memory Type
23
8
7
6
5
2
1
0
Memory Capacity
AMIC Technology Corp.
A25LS512A Series
Read Electronic Manufacturer ID & Device ID (REMS)
If the one-byte address is set to 01h, then the device ID
be read first and then followed by the Manufacturer ID.
the other hand, if the one-byte address is set to 00h, then
Manufacturer ID will be read first and then followed by
device ID.
The Read Electronic Manufacturer ID & Device ID (REMS)
instruction allows the 8-bit manufacturer identification code to
be read, followed by one byte of device identification. The
manufacturer identification is assigned by JEDEC, and has
the value 37h for AMIC. The device identification is assigned
by the device manufacturer.
Any Read Electronic Manufacturer ID & Device ID (REMS)
instruction while an Erase, or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in
progress.
will
On
the
the
The instruction sequence is shown in Figure 18. The Read
Electronic Manufacturer ID & Device ID (REMS) instruction is
terminated by driving Chip Select ( S ) High at any time during
data output.
When Chip Select ( S ) is driven High, the device is put in the
Stand-by Power mode. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
The device is first selected by driving Chip Select ( S ) Low.
The 8-bit instruction code is followed by 2 dummy bytes and
one byte address (A7~A0), each bit being latched-in on Serial
Data Input (DIO) during the rising edge of Serial Clock (C).
Table 7. Read Electronic Manufacturer ID & Device ID (REMS) Data-Out Sequence
Manufacture Identification
Device Identification
C2h
05h
Figure 18. Read Electronic Manufacturer ID & Device ID (REMS) Instruction Sequence and Data-Out Sequence
S
0 1 2 3 4 5 6 7 8 9 10
20 21 22 23
C
Instruction
2 Dummy Bytes
15 14 13
DIO
3 2 1 0
MSB
High Impedance
DO
S
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
ADD(1)
DIO
7 6 5 4 3 2 1 0
Manufacturer ID
DO
Device ID
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB
MSB
MSB
Notes:
(1) ADD=00h will output the manufacturer ID first and ADD=01h will output device ID first
(November, 2014, Version 1.1)
24
AMIC Technology Corp.
A25LS512A Series
Release from Deep Power-down
Electronic Signature (RES)
and
edge of Serial Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data Output
(DO), each bit being shifted out during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 19.
The Release from Deep Power-down and Read Electronic
Signature (RES) instruction is terminated by driving Chip
Read
Once the device has entered the Deep Power-down mode,
all instructions are ignored except the Release from Deep
Power-down and Read Electronic Signature (RES)
instruction. Executing this instruction takes the device out of
the Deep Power-down mode.
Select ( S ) High after the Electronic Signature has been read
at least once. Sending additional clock cycles on Serial Clock
The instruction can also be used to read, on Serial Data
Output (DO), the 8-bit Electronic Signature as shown below.
(C), while Chip Select ( S ) is driven Low, cause the
Electronic Signature to be output repeatedly.
Except while an Erase, Program or Write Status Register
cycle is in progress, the Release from Deep Power-down and
Read Electronic Signature (RES) instruction always provides
access to the 8-bit Electronic Signature of the device, and
can be applied even if the Deep Power-down mode has not
been entered.
When Chip Select ( S ) is driven High, the device is put in the
Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by
Power mode is immediate. If the device was previously in the
Deep Power-down mode, though, the transition to the Stand-
Any Release from Deep Power-down and Read Electronic
Signature (RES) instruction while an Erase, Program or Write
Status Register cycle is in progress, is not decoded, and has
no effect on the cycle that is in progress.
by Power mode is delayed by tRES2, and Chip Select ( S )
must remain High for at least tRES2 (max), as specified in AC
Characteristics Table . Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode
and execute instructions.
The device is first selected by driving Chip Select ( S ) Low.
The instruction code is followed by 3 dummy bytes, each bit
being latched-in on Serial Data Input (DIO) during the rising
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and
Data-Out Sequence
S
0
1
2 3 4
5 6
7 8
9 10
28 29 30 31 32 33 34 35 36 37 38
C
Instruction
23 22 21
DIO
tRES2
3 Dummy Bytes
3
2
1
0
MSB
DO
High Impedance
7 6
5
4
3
2
1
0
MSB
Deep Power-down Mode
Stand-by Mode
Note: The value of the 8-bit Electronic Signature, for the A25LS512A is 05h.
(November, 2014, Version 1.1)
25
AMIC Technology Corp.
A25LS512A Series
Figure 20. Release from Deep Power-down (RES) Instruction Sequence
S
C
0 1
2
3
4 5
6
tRES1
7
Instruction
DIO
DO
High Impedance
Deep Power-down Mode
Driving Chip Select ( S ) High after the 8-bit instruction byte
has been received by the device, but before the whole of the
8-bit Electronic Signature has been transmitted for the first
time (as shown in Figure 20.), still insures that the device is
put into Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the
Stand-by Power mode is immediate. If the device was
(November, 2014, Version 1.1)
Stand-by Mode
previously in the Deep Power-down mode, though, the
transition to the Stand-by Power mode is delayed by tRES1,
and Chip Select ( S ) must remain High for at least tRES1 (max),
as specified in AC Characteristics Table. Once in the
Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
26
AMIC Technology Corp.
A25LS512A Series
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must not be
selected (that is Chip Select ( S ) must follow the voltage
applied on VCC) until VCC reaches the correct value:
­
­
VCC (min) at Power-up, and then for a further delay of tVSL
VSS at Power-down
Usually a simple pull-up resistor on Chip Select ( S ) can be
used to insure safe and proper Power-up and Power-down.
To avoid data corruption and inadvertent write operations
during power up, a Power On Reset (POR) circuit is included.
The logic inside the device is held reset while VCC is less than
the POR threshold value, VWI – all operations are disabled,
and the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page
Program (PP), Sector Erase (SE), Block Erase (BE), Chip
Erase (CE) and Write Status Register (WRSR) instructions
until a time delay of tPUW has elapsed after the moment that
VCC rises above the VWI threshold. However, the correct
operation of the device is not guaranteed if, by this time, VCC
is still below VCC(min). No Write Status Register, Program or
Erase instructions should be sent until the later of:
­ tPUW after VCC passed the VWI threshold
- tVSL afterVCC passed the VCC(min) level
These values are specified in Table 8.
If the delay, tVSL, has elapsed, after VCC has risen above
VCC(min), the device can be selected for Read instructions
even if the tPUW delay is not yet fully elapsed.
At Power-up, the device is in the following state:
The device is in the Standby mode (not the Deep
Power-down mode).
­ The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail decoupling,
to stabilize the VCC feed. Each device in a system should
have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of
0.1µF).
At Power-down, when VCC drops from the operating voltage,
to below the POR threshold value, VWI, all operations are
disabled and the device does not respond to any instruction.
(The designer needs to be aware that if a Power-down occurs
while a Write, Program or Erase cycle is in progress, some
data corruption can result.)
­
Figure 21. Power-up Timing
VCC
VCC(max)
VCC(min)
Reset
State
tVSL
VWI
Read
Access
allowed
Full Device Access
tPUW
time
(November, 2014, Version 1.1)
27
AMIC Technology Corp.
A25LS512A Series
Table 8. Power-Up Timing
Symbol
Parameter
Min.
Max.
Unit
tVSL
VCC(min) to S Low
10
μs
tPUW
Time Delay Before Write Instruction
3
ms
VWI
Write Inhibit Threshold Voltage
2.3
2.5
V
Note: These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains
00h (all Status Register bits are 0).
(November, 2014, Version 1.1)
28
AMIC Technology Corp.
A25LS512A Series
Absolute Maximum Ratings*
*Comments
Storage Temperature (TSTG) . . . . . . . . . . -65°C to + 150°C
Lead Temperature during Soldering (Note 1)
D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to VCC+0.6V
Transient Voltage (<20ns) on Any Pin to Ground Potential . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VCC+2.0V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . -0.6V to +4.0V
Electrostatic Discharge Voltage (Human Body model)
(VESD) (Note 2) . . . . . . . . . . . . . . . . . . . -2000V to 2000V
Stressing the device above the rating listed in the Absolute
Maximum Ratings" table may cause permanent damage to
the device. These are stress ratings only and operation of
the device at these or any other conditions above those
indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. Refer also
to the AMIC SURE Program and other relevant quality documents.
Notes:
1. Compliant with JEDEC Std J-STD-020B (for small body,
Sn-Pb or Pb assembly).
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω ,
R2=500Ω)
DC AND AC PARAMETERS
This section summarizes the operating and measurement
conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the
Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their
circuit match the measurement conditions when relying on
the quoted parameters.
Table 9. Operating Conditions
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
2.7
3.6
V
TA
Ambient Operating Temperature
–40
85
°C
Table 10. Data Retention and Endurance
Parameter
Condition
Min.
Max.
Unit
Erase/Program Cycles
At 85°C
100,000
Cycles
Data Retention
At 85°C
20
Years
Table 11. Capacitance
Symbol
Parameter
COUT
Output Capacitance (DO)
CIN
Input Capacitance (other pins)
Test Condition
Min.
Max.
Unit
VOUT = 0V
8
pF
VIN = 0V
6
pF
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 33 MHz.
(November, 2014, Version 1.1)
29
AMIC Technology Corp.
A25LS512A Series
Table 12. DC Characteristics
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
ICC2
Deep Power-down Current
ICC3
Operating Current (READ)
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
5
15
µA
5
15
µA
C= 0.1VCC / 0.9.VCC at 100MHz, DO = open
18
24
mA
C= 0.1VCC / 0.9.VCC at 50MHz, DO = open
10
21
mA
C= 0.1VCC / 0.9.VCC at 33MHz, DO = open
7
17
mA
S = VCC
S = VCC
10
15
mA
15
mA
25
mA
25
mA
ICC4
Operating Current (PP)
ICC5
Operating Current (WRSR)
ICC6
Operating Current (SE)
ICC7
Operating Current (BE)
VIL
Input Low Voltage
–0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6mA
0.4
V
VOH
Output High Voltage
IOH = –100µA
S = VCC
S = VCC
VCC–0.2
V
Note: 1. This is preliminary data at 85°C
Table 13. Instruction Times
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
tW
Write Status Register Cycle Time
5
15
ms
tPP
Page Program Cycle Time
2
3
ms
tSE
Sector Erase Cycle Time
0.2
0.24
s
tBE
Block Erase Cycle Time
0.5
1.3
s
tCE
Chip Erase Cycle Time of A25LS512A
0.5
1.3
s
Note: 1. Max is for 85°C
2. This is preliminary data
Table 14. AC Measurement Conditions
Symbol
CL
Parameter
Min.
Load Capacitance
Max.
30
Input Rise and Fall Times
Unit
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VCC / 2
V
Output Timing Reference Voltages
Note: Output Hi-Z is defined as the point where data out is no longer driven.
(November, 2014, Version 1.1)
30
AMIC Technology Corp.
A25LS512A Series
Figure 22. AC Measurement I/O Waveform
Input Levels
Input and Output
Timing Reference Levels
0.8VCC
0.7VCC
0.5VCC
0.3VCC
0.2VCC
(November, 2014, Version 1.1)
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AMIC Technology Corp.
A25LS512A Series
Table 15. AC Characteristics
Symbol
Alt.
Parameter
Min.
fC
fC
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, DP, RES, RDID, WREN, WRDI, RDSR, WRSR
(2.7V~3.6V) / (3.0V~3.6V)
Clock Frequency for READ instructions
fR
tCH
1
tCLH
tCL
1
tCLL
Clock High Time
Typ.
Max.
Unit
D.C.
80/100
MHz
D.C.
66
MHz
6
5
ns
tCLCH 2
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL 2
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
tSLCH
tCSS
tCHSL
Clock Low Time
ns
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ 2
tDIS
Output Disable Time
9
ns
tCLQV
tV
Clock Low to Output Valid
9
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX
2
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ
2
tHZ
HOLD to Output High-Z
8
ns
tWHSL 4
Write Protect Setup Time
20
ns
tSHWL 4
Write Protect Hold Time
100
ns
tDP
2
S High to Deep Power-down Mode
3
µs
tRES1 2
S High to Standby Mode without Electronic Signature Read
30
µs
tRES2 2
S High to Standby Mode with Electronic Signature Read
30
µs
tW
Write Status Register Cycle Time
5
15
ms
tpp
Page Program Cycle Time
2
3
ms
tSE
Sector Erase Cycle Time
0.2
0.24
s
tBE
Block Erase Cycle Time
0.5
1.3
s
tCE
Chip Erase Cycle Time of A25LS512A
0.5
1.3
s
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
(November, 2014, Version 1.1)
32
AMIC Technology Corp.
A25LS512A Series
Figure 23. Serial Input Timing
tSHSL
S
tCHSL
tSLCH
tCHSH
C
tCHCL
tDVCH
tCLCH
tCHDX
DIO
DO
tSHCH
MSB IN
LSB IN
High Impedance
Figure 24. Write Protect Setup and Hold Timing during WRSR when SRWD=1
W
tSHWL
tWHSL
S
C
DIO
DO
(November, 2014, Version 1.1)
High Impedance
33
AMIC Technology Corp.
A25LS512A Series
Figure 25. Hold Timing
S
tHLCH
tHHCH
tCHHL
C
tCHHH
DIO
tHLQZ
tHHQX
DO
HOLD
Figure 26. Output Timing
S
tCH
C
DIO ADDR.LSB IN
tCLQV
tCLQX
tCL
tCLQV
tSHQZ
tCLQX
DO
LSB OUT
tQLQH
tQHQL
(November, 2014, Version 1.1)
34
AMIC Technology Corp.
A25LS512A Series
Part Numbering Scheme
A25 XX XXX X X X X / X
Packing
Blank: for DIP8
G: for SOP8 In Tube
Q: for Tape & Reel
Package Material
Blank: normal
F: PB free
Temperature*
Blank = -40°C ~ +85°C
Package Type
Blank = DIP 8
M = 209 mil SOP 8
O = 150 mil SOP 8
V = TSSOP 8
Q1 = USON 8 (2*3mm)
Q4 = WSON 8 (6*5mm)
Device Version
A = A Chip Version
Device Density
512 = 512 Kbit (4KB uniform sectors)
010 = 1 Mbit (4KB uniform sectors)
020 = 2 Mbit (4KB uniform sectors)
040 = 4 Mbit (4KB uniform sectors)
080 = 8 Mbit (4KB uniform sectors)
016 = 16 Mbit (4KB uniform sectors)
032 = 32 Mbit (4KB uniform sectors)
Device Voltage
LS = 2.7-3.6V
Device Type
A25 = AMIC Serial Flash
* Optional
(November, 2014, Version 1.1)
35
AMIC Technology Corp.
A25LS512A Series
Ordering Information
Part No.
Speed (MHz)
Active Read
Current
Max. (mA)
Program/Erase
Current
Max. (mA)
Standby
Current
Max. (μA)
Package
A25LS512A-F
8 Pin Pb-Free DIP (300 mil)
A25LS512AO-F
8 Pin Pb-Free SOP (150 mil)
A25LS512AM-F
A25LS512AV-F
100
24
25
15
8 Pb-Free Pin SOP (209mil)
8 Pin Pb-Free TSSOP
A25LS512AQ1-F
8 Pin Pb-Free USON (2*3mm)
A25LS512AQ4-F
8 Pin Pb-Free WSON (6*5mm)
Operating temperature range: -40°C ~ +85°C
(November, 2014, Version 1.1)
36
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: inches/mm
P-DIP 8L Outline Dimensions
Dimensions in inches
Dimensions in mm
Symbol
Min
Nom
Max
Min
Nom
Max
A
-
-
0.180
-
-
4.57
A1
0.015
-
-
0.38
-
-
A2
0.128
0.130
0.136
3.25
3.30
3.45
B
0.014
0.018
0.022
0.36
0.46
0.56
B1
0.050
0.060
0.070
1.27
1.52
1.78
B2
0.032
0.039
0.046
0.81
0.99
1.17
C
D
0.008
0.350
0.010
0.360
0.013
0.370
0.20
8.89
0.25
9.14
0.33
9.40
E
0.290
0.300
0.315
7.37
7.62
8.00
E1
0.254
0.260
0.266
6.45
6.60
6.76
e1
-
0.100
-
-
2.54
-
L
0.125
-
-
3.18
-
-
EA
0.345
-
0.385
8.76
-
9.78
S
0.016
0.021
0.026
0.41
0.53
0.66
Notes:
1. Dimension D and E1 do not include mold flash or protrusions.
2. Dimension B1 does not include dambar protrusion.
3. Tolerance: ±0.010” (0.25mm) unless otherwise specified.
(November, 2014, Version 1.1)
37
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: mm
E
e
HE
SOP 8L (150mil) Outline Dimensions
A1
A
b
0° ~ 8°
D
L
Symbol
Dimensions in mm
A
1.35~1.75
A1
0.10~0.25
b
0.33~0.51
D
4.7~5.0
E
3.80~4.00
e
1.27 BSC
HE
5.80~6.20
L
0.40~1.27
Notes:
1. Maximum allowable mold flash is 0.15mm.
2. Complies with JEDEC publication 95 MS –012 AA.
3. All linear dimensions are in millimeters (max/min).
4. Coplanarity: Max. 0.1mm
(November, 2014, Version 1.1)
38
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: mm
5
1
4
E
8
E1
SOP 8L (209mil) Outline Dimensions
C
A2
A
D
GAGE PLANE
SEATING PLANE
A1
b
θ
0.25
e
L
Dimensions in mm
Symbol
Min
Nom
Max
A
1.75
1.95
2.16
A1
0.05
0.15
0.25
A2
1.70
1.80
1.91
b
0.35
0.42
0.48
C
0.19
0.20
0.25
5.33
D
5.13
5.23
E
7.70
7.90
8.10
E1
5.18
5.28
5.38
e
1.27 BSC
L
0.50
0.65
0.80
θ
0°
-
8°
Notes:
Maximum allowable mold flash is 0.15mm at the package
ends and 0.25mm between leads
(November, 2014, Version 1.1)
39
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: inches/mm
TSSOP 8L Outline Dimensions
E
5
E1
8
C
1
4
y
e
b
θ
A1
D
A
A2
D
L
L1
Dimensions in inches
Symbol
(November, 2014, Version 1.1)
Min
Nom
Max
Dimensions in mm
Min
Nom
Max
A
-
-
0.0472
-
-
1.200
A1
0.0020
-
0.0059
0.050
-
0.150
A2
0.0315
0.0394
0.0413
0.800
1.000
1.050
b
0.0075
-
0.0118
0.190
-
0.300
c
0.0035
-
0.0079
0.090
-
0.200
E
0.2441
0.2520
0.2598
6.200
6.400
6.600
E1
0.1693
0.1732
0.1772
4.300
4.400
4.500
e
-
0.0256
-
-
0.650
-
D
0.1142
0.1181
0.1220
2.900
3.000
3.100
L
0.0177
0.0236
0.0295
0.450
0.600
0.750
L1
-
0.0394
-
-
1.000
-
y
-
-
0.0039
-
-
0.100
θ
0°
-
8°
0°
-
8°
40
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: mm
USON 8L (2 X 3mm) Outline Dimensions
D1
E
E1
L
D
e
b
Pin 1 I.D.
Pin 1
Bottom View
A3
A1
A
Top View
Side View
Dimensions in mm
Symbol
Min
Nom
Max
A
＞0.50
0.55
0.60
A1
0.00
-
0.05
A3
D
0.152 REF
1.95
2.05
E
2.95
3.00
3.05
D1
1.495
1.645
1.745
E1
1.65
1.80
1.90
b
0.20
0.25
0.30
e
L
(November, 2014, Version 1.1)
2.00
0.5 BSC
0.30
0.40
41
0.50
AMIC Technology Corp.
A25LS512A Series
Package Information
unit: mm/mil
0.25 C
WSON 8L (6 X 5 X 0.8mm) Outline Dimensions
1
1
0.25 C
b
2
3
4
6
5
L
4
e
D2
D
C0.30
Pin1 ID Area
5
7
8
8
E
E2
A3
A1
A
// 0.10 C
Seating Plane
Symbol
y C
Dimensions in mm
Dimensions in mil
Min
Nom
Max
Min
Nom
Max
A
0.700
0.750
0.800
27.6
29.5
31.5
A1
0.000
0.020
0.050
0.0
0.8
2.0
A3
0.203 REF
8.0 REF
b
0.350
0.400
0.480
13.8
15.8
18.9
D
5.900
6.000
6.100
232.3
236.2
240.2
D2
3.200
3.400
3.600
126.0
133.9
141.7
E
4.900
5.000
5.100
192.9
196.9
200.8
E2
3.800
4.000
4.200
149.6
157.5
165.4
L
0.500
0.600
0.750
19.7
23.6
29.5
1.270 BSC
e
y
0
-
50.0 BSC
0.080
0
-
3.2
Note:
1. Controlling dimension: millimeters
2. Leadframe thickness is 0.203mm (8mil)
(November, 2014, Version 1.1)
42
AMIC Technology Corp.