AWM6423 2.5-2.7 GHz WiMAX Power Amplifier Module Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • 30 dB Gain • 2.5 % EVM at +22 dBm (+3.3 V Supply) • 4 % EVM at +23.5 dBm (+3.3 V Supply) • 2.5 % EVM at +23.5 dBm (+4.2 V Supply) • 4 % EVM at +25 dBm (+4.2 V Supply) • High Efficiency • Integrated 25 dB Attenuator • Integrated Output Power Detector • 50 Matched RF Ports for Reduced External Component Count • 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module, Materials Set Consistent with RoHS Directives M18 Package 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module APPLICATIONS • WiMAX Tranceivers That Support the IEEE 802.16d-2004, IEEE 802.16e-2005, and the ETSI EN301-021 Wireless standards PRODUCT DESCRIPTION The ANADIGICS AWM6423 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed for portable or mobile applications in the 2.5-2.7 GHz band, it supports the IEEE 802.16e-2005 wireless standard, as well as the IEEE 802.16d-2004 and ETSI EN301-021 standards. The device requires only a nominal +3.3 V supply and a low-current bias input. An increase in supply voltage produces an increase in the maximum linear output power. The integrated detector can be used to monitor output power, and the integrated 25 dB step attenuator enables gain control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6423 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness. It is offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount module optimized for use in a 50 system. Supply Voltage RF Input Supply Voltage Step Attenuator Matching Network Bias Control Attenuator Control Bias Voltage RF Output Power Detector Detector Ouput Ground Figure 1: Functional Block Diagram 11/2008 AWM6423 VCC 1 12 VCC RFIN 2 11 GND GND 3 10 RFOUT VBIAS 4 9 GND VCC 5 8 GND VATTN 6 7 DET GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VCC Supply Voltage 2 RFIN RF Input 3 GND Ground 4 VBIAS Bias/Shutdown 5 VCC Supply Voltage 6 VATTN Attenuator Control 7 DET Detector Output 8 GND Ground 9 GND Ground 10 RFOUT RF Output 11 GND Ground 12 VCC Supply Voltage Data Sheet - Rev 2.2 11/2008 AWM6423 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings COMMENTS MIN MAX UNIT Supply Voltage (VCC) 0 +5.0 V Bias Voltage (VBIAS) 0 +3.0 V Attenuator Control Voltage (VATTN) 0 +3.7 V RF Input Power - 0 dBm 400 1,000 - V Class 1A Class 3 3 4 - - 235 °C Peak Reflow 250 °C Peak Reflow -40 +150 °C PARAMETER ESD Rating Human Body Model Charged Device Model MSL Level Storage Temperature OFDM modulated signal Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 2500 - 2700 MHz Supply Voltage (VCC) +2.9 +3.3 +4.2 V Bias Voltage (VBIAS) +2.80 0 +2.85 - +2.90 +0.7 V PA"on" PA"shut down" +2.3 0 - +3.7 +0.7 V Attenuator enabled Nominal gain RF Output Power (POUT) - +23.5 - dBm Case Temperature (TC) -40 - +85 °C Attenuator Control Voltage (VATTN) Logic High Logic Low COMMENTS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Data Sheet - Rev 2.2 11/2008 3 AWM6423 Table 4: Electrical Specifications (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 2.7 GHz, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 27 31 33 dB Attenuator Step 23 25 27 dB COMMENTS 10 MHz Channel Bandwidth WiMAX user equipment coexistence emissions mask Output Power Meets Spectrum Mask - +23.5 - dBm EVM - 2.5 4 2.8 - % Output P1dB - +30 - dBm CW Output IP3 - +41 - dBm two CW tones, +19 dBm output per tone Harmonics - -35 - dBc at +23.5 dBm POUT Power-Added Efficiency - 20 - % at +23.5 dBm POUT Power Detector Voltage at +24 dBm POUT at +14 dBm POUT - +1.9 +0.6 - V High impedance load 85 105 125 mA Current Consumption VCC VCC VBIAS VATTN - 300 340 6.5 0.2 360 8.0 1.0 Leakage Current (2) - 1.7 3.0 Quiescent Current mA mA at +22 dBm POUT at +23.5 dBm POUT at +22 dBm POUT at +23.5 dBm POUT Logic High = +3.3 V PA shut down (VBIAS = 0V) See figure 19 Application Circuit. Notes: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. (2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS application note titled, “AWM6423 Reduced leakage current in Off State.” 4 Data Sheet - Rev 2.2 11/2008 AWM6423 PERFORMANCE DATA Figure 3: Gain vs. Output Power (TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) Figure 4: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) 7.0 33 6.5 32 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 5.5 Uncorrected EVM (%) 30 Gain (dB) Frequency 6.0 31 29 28 Frequency 27 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 26 25 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 24 0.5 0.0 23 13 14 15 16 17 18 19 20 21 22 23 24 25 13 26 14 15 16 17 33 20 21 22 23 24 25 26 7.0 6.5 32 Frequency 6.0 31 5.5 30 5.0 Uncorrected EVM (%) Gain (dB) 19 Figure 6: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) Figure 5: Gain vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) 29 28 Frequency 27 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 26 25 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 24 0.5 0.0 23 13 14 15 16 17 18 19 20 21 22 23 24 25 13 26 14 15 16 17 Figure 7: Gain vs. Output Power (TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) 6.5 21 22 23 24 25 26 Frequency 6.0 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 5.5 Uncorrected EVM (%) 31 30 29 28 Frequency 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 25 20 7.0 32 26 19 Figure 8: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) 33 27 18 Output Power (dBm) Output Power (dBm) Gain (dB) 18 Output Power (dBm) Output Power (dBm) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 24 0.5 0.0 23 13 14 15 16 17 18 19 20 21 22 23 24 25 26 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Output Power (dBm) Data Sheet - Rev 2.2 11/2008 5 AWM6423 Figure 9: Gain vs. Frequency (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, POUT = +22 dBm, 54 Mbps OFDM Modulation) Figure 10: Uncorrected EVM vs. Frequency (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) 7.0 33 6.5 32 6.0 31 Uncorrected EVM (%) 5.5 30 Gain (dB) 29 28 27 26 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 25 1.0 24 0.5 23 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 0.0 2.40 2.80 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 Frequency (GHz) Frequency (GHz) Figure 12: Effects of Bias Voltage (VBIAS) on EVM (TC = +25 °C, VCC = +3.3 V, f = 2.6 GHz, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) Figure 11: Supply Current vs. Output Power (TC = +25 °C, VBIAS = +2.85 V, f = 2.5 GHz, 54 Mbps OFDM Modulation) 7.0 400 6.5 6.0 350 +2.80 V +2.85 V +2.90 V 5.0 Uncorrected EVM (%) +4.2 V +3.3 V +2.9 V 300 Icc (mA) VBIAS 5.5 Vcc 250 200 4.5 4.0 3.5 3.0 2.5 2.0 1.5 150 1.0 0.5 100 0.0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 13 14 15 16 17 Figure 13: Detector Voltage vs. Output Power (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps OFDM Modulation) 20 21 22 23 24 25 3.0 Frequency 2.5 2.45 GHz 2.50 GHz 2.60 GHz 2.70 GHz 2.75 GHz 2.0 2.5 Vcc Detector Voltage (V) Detector Voltage (V) 19 Figure 14: Effects of Supply Voltage (VCC) on Detector Voltage (TC = +25 °C, VBIAS = +2.85 V, f = 2.6 GHz, 54 Mbps OFDM Modulation) 3.0 1.5 1.0 0.5 +4.2 V +3.3 V +2.9 V 2.0 1.5 1.0 0.5 0.0 13 14 15 16 17 18 19 20 21 Output Power (dBm) 6 18 Output Power (dBm) Output Power (dBm) 22 23 24 25 26 0.0 13 14 15 16 17 18 19 20 21 Output Power (dBm) Data Sheet - Rev 2.2 11/2008 22 23 24 25 26 AWM6423 Figure 16: Effects of Case Temperature on EVM (VCC = +3.3 V, VBIAS = +2.85 V, f = 2.6 GHz, 54 Mbps OFDM Modulation, system EVM approx. 0.8 %) Figure 15: Gain vs. Case Temperature (VCC = +3.3 V, VBIAS = +2.85 V, f = 2.6 GHz, POUT = +22 dBm, 54 Mbps OFDM Modulation) 7.0 33.0 6.5 32.5 6.0 Uncorrected EVM (%) Gain (dB) Case Temp 5.5 32.0 31.5 31.0 30.5 30.0 +85 deg C 5.0 +25 deg C 4.5 -40 deg C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 29.5 0.5 0.0 29.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 13 90 14 15 16 17 19 20 21 22 23 24 25 Figure 18: Effects of Case Temperature on Detector Voltage (VCC = +3.3 V, VBIAS = +2.85 V, f = 2.6 GHz, 54 Mbps OFDM Modulation) Figure 17: Supply Current vs. Case Temperature (VCC = +3.3 V, VBIAS = +2.85 V, f = 2.6 GHz, POUT = +22 dBm, 54 Mbps OFDM Modulation) 280 3.0 275 2.5 Case Temp Detector Voltage (V) 270 Icc (mA) 18 Output Power (dBm) Case Temperature (deg C) 265 260 255 +85 deg C 2.0 +25 deg C -40 deg C 1.5 1.0 0.5 250 0.0 245 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) Case Temperature (deg C) Data Sheet - Rev 2.2 11/2008 7 AWM6423 APPLICATION INFORMATION Transmit Disable and Attenuator Control The power amplifier is disabled by setting VBIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN. VCC VCC 2.2 F RF IN VBIAS 100 pF VCC 0.1 F VATTN VCC VCC 12 2 RFIN GND 11 3 GND RFOUT 10 4 VBIAS GND 9 5 VCC GND 8 6 VATTN DET 7 GND at slug Data Sheet - Rev 2.2 11/2008 2.2 F RF OUT DETOUT 4.7 K Figure 19: Application Circuit 8 1 F 0.01 F 1 0.1 F AWM6423 Figure 20: Land Pattern Data Sheet - Rev 2.2 11/2008 9 AWM6423 PACKAGE OUTLINE Figure 21: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module 10 Data Sheet - Rev 2.2 11/2008 AWM6423 NOTES Data Sheet - Rev 2.2 11/2008 11 AWM6423 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWM6423RM18P8 -40 °C to +85 °C 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module 2,500 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 Data Sheet - Rev 2.2 11/2008