AWT6283R 3.3 GHz to 3.8 GHz Mobile WiMAX Power Amplifier Module Data Sheet - Rev 2.3 FEATURES • InGaP HBT Technology • +25 dBm Linear Output Power • 31 dB Gain • 2.5 % EVM QPSK 1/2 CTC, 16 QAM OFDMA Modulation • High Efficiency • Integrated Voltage Regulator (eliminates need for external reference voltage) • Integrated Output Power Detector • Integrated Step Attenuator • Low Leakage Current in Shutdown Mode: 20 µA • Optimized for a 50 Ω System M49 Package 10 Pin 4 mm x 4 mm x 1 mm Surface Mount Module • Low Profile Miniature Surface Mount Package • RoHS Compliant Package APPLICATIONS • Mobile WiMAX Data Cards and Terminals that Support the IEEE 802.16e (2005) Standard PRODUCT DESCRIPTION The AWT6283R meets the stringent linearity and output power requirements of the Mobile WiMAX high speed data system. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. An integrated step attenuator enables gain control, and an integrated voltage regulator eliminates the need for an external reference voltage. The self-contained 4 mm x 4 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) V CC 1 10 VCC RFIN 2 GND 3 VENB 4 VATTN 5 Step Attenuator Bias Control Voltage Regulator Power Detector Figure 1: Block Diagram 12/2012 9 GND 8 RFOUT 7 GND 6 VDET AWT6283R GND VCC 1 10 VCC RFIN 2 9 GND GND 3 8 RFOUT VENB 4 7 GND VATTN 5 6 VDET GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VCC Supply Voltage 2 RFIN RF Input 3 GND Ground 4 VENB PA Enable Voltage 5 VATTN Attenuator Control Voltage 6 VDET Detector Output Voltage 7 GND Ground 8 RFOUT RF Output 9 GND Ground 10 VCC Supply Voltage Data Sheet - Rev 2.3 12/2012 AWT6283R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Enable Voltage (VENB) 0 +3.2 V Attenuator Control Voltage (VATTN) 0 +3.7 V RF Input Power (PIN) - 0 dBm 250 1000 - V (3) 3 - - Storage Temperature (TSTG) -40 +150 °C ESD Rating: Human Body Model (1) Charged Device Model (2) MSL Rating Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) JEDEC Class 1A (2) JEDEC Class IV (3) 260 8C Peak Reflow Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 3300 - 3800 MHz Supply Voltage (VCC) +3.0 +3.3 +4.2 V Enable Voltage (VENB) +2.7 0 +2.9 - +3.1 +0.5 V +2.3 0 - +3.7 +0.7 V RF Output Power (POUT) - +25 - dBm Case Temperature (TC) -40 - +85 °C Attenuator Control Voltage (VATTN) Logic High Logic Low COMMENTS PA "on" PA "shut down" Attenuator Enabled Attenuator Disabled The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 3 Data Sheet - Rev 2.3 12/2012 AWT6283R Table 4: Electrical Specifications - QPSK 1/2 CTC, Zone = AMC 4:2 (TC = +25 °C, VCC = +3.3 V, VENB = +2.9 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain (2) 28.5 31 37.5 dB 17 20 25 dB VATTN = 2.5 V - - -51.37 -40.5 -50.5 -50.5 dBc 10 MHz Channel bandwidth WiMAX Forum Band Class 5C MRRT 19.2 21.8 - % Thermal Resistance (RJC) - 24 - °C/W Supply Current (ICC) - 440 500 mA EVM(2) - 2.5 4 % Power Detector Output @ 25 dBm - 1.3 - V Quiescent Current (Icq) 90 145 170 mA PA Enable Current 0.6 3.5 5.0 mA through VENB pin Leakage Current - 20 100 µA VCC = +3.3 V, VENB = 0 V Harmonics (2) 2fo 3fo, 4fo - -42 -58 - dBc Input Impedance - 2:1 - VSWR Attenuation SEM (1), (2) @ Offset A @ Offset B @ Offset C @ Offset D Power-Added Efficiency (1), (2) (2) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -60 dBc 8:1 - - VSWR Notes: (1) Spectrum Mask and Efficiency measured at 3600 MHz. (2) POUT = +25 dBm 4 Data Sheet - Rev 2.3 12/2012 COMMENTS RL (Load Resistor) = 100K Ω POUT < +25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges VCC = +4 V, PIN = 0 dBm Applies over full operating temperature range AWT6283R Table 5: Electrical Specifications - 16 QAM PUSC Zone (TC = +25 °C, VCC = +3.3 V, VENB = +2.9 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain (2) - 31 - dB Attenuation - 20 - dB VATTN = 2.5 V SEM (1), (2) @ OFFSET A @ OFFSET B @ OFFSET C @ OFFSET D - - -51.37 -40.5 -50.5 -50.5 dBc 10 MHz channel bandwidth WiMAX Forum Band Class 5C MRRT Power-Added Efficiency (1), (2) - 21.8 - % Thermal Resistance (RJC) - 24 - °C/W Supply Current (ICC) (2) - 440 - mA EVM (2) - 2.5 - % Power Detector Output @ 25 dBm - 1.3 - V Quiescent Current (Icq) - 145 - mA PA Enable Current - 3.5 - mA through VENB pin Leakage Current - 20 - µA VCC = +3.3 V, VENB = 0 V Harmonics (2) 2fo 3fo,4fo - -42 -58 - dBc Input Impedance - 2:1 - VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -60 dBc 8:1 - - VSWR Notes: (1) Spectrum Mask and Efficiency measured at 3600 MHz. (2) POUT = +25 dBm 5 Data Sheet - Rev 2.3 12/2012 COMMENTS RL (Load Resistor) = 100K Ω POUT < +25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges VCC = +4 V, PIN = 0 dBm Applies over full operating temperature range AWT6283R APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENB voltage. Table 6: Bias Control APPLICATION WiMAX - high power Shutdown Vcc1 C1* C2 47 µF C3 2.2 µF 0.1 µF 1000 pF Vcc VREF C10 0.1 µF VATTN VENB VCC All High +2.9 V +3.3 - Shutdown 0V - C5 GND VREF BIAS MODE C4 RFIN RFIN POUT LEVELS VATTN Vcc 1 10 2 9 GND 3 AWT6283R 8 4 7 5 6 C6 1000 pF C8* Vcc2 C9* 0.1 µF 2.2 µF 47 µF 47 µF RFOUT RFOUT GND VDET R1 C11 4.7kΩ 0.1 µF C12 Data Sheet - Rev 2.3 12/2012 VDET R2 0.1 µF * Optional Figure 3: Application Circuit Schematic 6 C7 100kΩ AWT6283R NOTES: (1) UNLESS SPECIFIED DIMENSIONS ARE SYMMETRICAL ABOUT CENTER LINES SHOWN. (2) DIMENSIONS IN MILLIMETERS. Figure 4: PCB Footprint 7 Data Sheet - Rev 2.3 12/2012 AWT6283R PACKAGE OUTLINE Figure 5: M49 Package Outline - 10 Pin 4 mm x 4 mm x 1 mm Surface Mount Module ANADIGICS logo Pin 1 Identifier Date Code AWT6283R YY=Year WW=Work Week YYWW LLLLL-SS Marking Code BBBB CC Part Number Lot Number Country Code Figure 6: Branding Specification 8 Data Sheet - Rev 2.3 12/2012 AWT6283R COMPONENT PACKAGING Pin 1 Figure 7: Tape & Reel Packaging Table 8: Tape & Reel Dimensions 9 PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 4 mm x 4 mm x 1 mm 12 mm 8 mm 2500 13" Data Sheet - Rev 2.3 12/2012 AWT6283R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION AWT6283RM49P8 -40 oC to +85 oC RoHS-compliant 10 Pin 4 mm x 4 mm x 1 mm Surface Mount Module COMPONENT PACKAGING Tape and Reel, 2500 pieces per Reel ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 10 Data Sheet - Rev 2.3 12/2012