AWM6432 3.3-3.6 GHz WiMAX PowerAmplifier Module PRELIMINARY DATA SHEET- Rev 1.1 FEATURES • 26.5 dB Gain • +24 dBm Linear Output Power • 2.3 % EVM (OFDM Modulation) • +5 V to +6 V Supply • High Efficiency • Integrated Step Attenuator • Integrated Output Power Detector • 50Ω Matched RF Ports • RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module AWM6 432 APPLICATIONS • WiMAX tranceivers that support the IEEE 802.16-2004 and ETSI EN301-021 standards • Broadband Wireless Applications (BWA) M18 Package 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module PRODUCT DESCRIPTION The ANADIGICS AWM6432 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed to operate in the 3.5 GHz band, it supports the IEEE 802.16-2004 and ETSI EN301-021 wireless standards. The device requires only a single +5 V to +6 V supply and a low-current reference input. An integrated detector can be used to monitor output power, and an integrated 20 dB step attenuator enables gain control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6432 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability and ruggedness. It is optimized for use in a 50 Ω system, and is offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount module. Supply Voltage RF Input Supply Voltage Step Attenuator Matching Network Bias Control Attenuator Control Bias Voltage Power Detector Detector Ouput Figure 1: Functional Block Diagram 11/2006 RF Output Ground AWM6432 VCC 1 12 VCC RFIN 2 11 GND GND 3 10 RFOUT GND VBIAS 4 9 GND VCC 5 8 GND VATTN 6 7 DET Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 V CC Supply Voltage 2 RFIN RF Input 3 GND Ground 4 VBIAS Bias/Shutdown 5 V CC Supply Voltage 6 VATTN Attenuator Control 7 D ET Detector Output 8 GND Ground 9 GND Ground 10 RFOUT RF Output 11 GND Ground 12 V CC Supply Voltage PRELIMINARY DATA SHEET - Rev 1.1 11/2006 AWM6432 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +6.5 V Bias Voltage (VBIAS) 0 +3.3 V Attenuator Control Voltage (VATTN) 0 +3.7 V RF Input Power - 0 dB m ESD Rating Class 1A Class 3 - - HBM CDM MSL Level 3 4 - - 235 °C Peak Reflow 250 °C Peak Reflow -40 +150 °C Storage Temperature COMMENTS OFDM modulated signal Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 3300 - 3600 MHz Supply Voltage (VCC) +5.0 - +6.0 V Bias Voltage (VBIAS) +2.9 0 +3.0 - +3.1 +0.7 V PA"on" PA"shut down" +2.3 0 - +3.7 +0.7 V Attenuator enabled Nominal gain RF Output Power (POUT) - +24 - dB m Case Temperature (TC) -40 - +85 °C Attenuator Control Voltage (VATTN) Logic High Logi c Low COMMENTS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. PRELIMINARY DATA SHEET - Rev 1.1 11/2006 3 AWM6432 Table 4: Electrical Specifications (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.6 GHz, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25 26.5 30 dB Attenuator Step 18 20 22 dB +24 - - dB m EVM - 2.3 2.5 % Output P1dB - +31 - dB m CW Output IP3 - +43 - dB m two CW tones, +21 dBm output per tone Harmonics - -20 - dB m at +24 dBm POUT Power-Added Efficiency - 12.8 - % at +24 dBm POUT Power Detector Voltage at +24 dBm POUT at +14 dBm POUT - +2.6 +0.6 - V High impedance load Quiescent Current - 87 120 mA Current Consumption VCC VBIAS VATTN - 305 7.4 0.2 365 8 1.0 mA Leakage Current - 1.7 3.0 mA Output Power Meets Spectrum Mask COMMENTS ETSI EN301-021 Type G at +24 dBm POUT POUT = +24 dBm Logic High = +3.3 V PA shut down (VBIAS = 0V) Note: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. 4 PRELIMINARY DATA SHEET - Rev 1.1 11/2006 AWM6432 PERFORMANCE DATA Figure 4: Gain vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, POUT = +24 dBm, 54 Mbps OFDM Modulation) 31.0 31.0 30.5 30.5 30.0 30.0 29.5 29.5 29.0 29.0 Gain (dB) Gain (dB) Figure 3: Gain vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 28.5 28.0 28.5 28.0 27.5 27.5 27.0 27.0 26.5 26.5 26.0 14 15 16 17 18 19 20 21 22 23 24 25 26.0 3.25 26 3.30 3.35 3.40 Output Power (dBm) Figure 5: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 3.50 3.55 3.60 3.65 Figure 6: Uncorrected EVM vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 7 Output Power Frequency 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 6 5 4 3 4 3 2 2 1 1 0 3.25 0 14 15 16 +24 dBm +23 dBm +22 dBm 6 EVM (%) 5 EVM (%) 3.45 Frequency (GHz) 17 18 19 20 21 22 23 24 25 26 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Frequency (GHz) Output Power (dBm) Figure 8: Detector Voltage vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation) Figure 7: Detector Voltage vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 3.5 3.5 3.0 3.0 2.5 2.5 Detector Voltage (V) Detector Voltage (V) Output Power 2.0 1.5 1.0 +24 dBm +18 dBm +21 dBm +15 dBm 2.0 1.5 1.0 0.5 0.5 0.0 14 15 16 17 18 19 20 21 22 23 24 25 26 0.0 3.25 3.30 3.35 Output Power (dBm) 3.40 3.45 3.50 3.55 3.60 3.65 Frequency (GHz) PRELIMINARY DATA SHEET - Rev 1.1 11/2006 5 AWM6432 Figure 9: Effects of Bias Voltage (VBIAS) on EVM (TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 Bias Voltage +2.8 V +2.9 V +3.0 V +3.1 V 6 EVM (%) 5 4 3 2 1 0 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Figure 10: Effects of Supply Voltage (VCC) on EVM (TC = +25 °C, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 Vcc 6 +5.0 V +5.5 V +6.0 V EVM (%) 5 4 3 2 1 0 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Figure 11: Effects of Case Temperature on EVM (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 Case Temperature +85 deg C +50 deg C +25 deg C 0 deg C -25 deg C -40 deg C 6 EVM (%) 5 4 3 2 1 0 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 6 PRELIMINARY DATA SHEET - Rev 1.1 11/2006 25 26 AWM6432 Figure 13: Gain vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm, 54 Mbps OFDM Modulation) 31.0 31.0 30.5 30.5 30.0 30.0 29.5 29.5 29.0 29.0 Gain (dB) Gain (dB) Figure 12: Gain vs. Bias Voltage (VBIAS) (TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 28.5 28.0 28.5 28.0 27.5 27.5 27.0 27.0 26.5 26.5 26.0 2.75 26.0 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 -50 -40 -30 -20 -10 Bias Voltage (V) 10 20 30 40 50 60 70 80 90 o Figure 15: Supply Current vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm 54 Mbps OFDM Modulation) Figure 14: Supply Current vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 350 300 300 280 250 260 Icc (mA) Icc (mA) 0 Case Temperature ( C ) 200 240 150 220 100 200 14 15 16 17 18 19 20 21 22 23 24 25 26 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 o Output Power (dBm) Case Temperature ( C ) PRELIMINARY DATA SHEET - Rev 1.1 11/2006 7 AWM6432 APPLICATION INFORMATION Transmit Disable and Attenuator Control The power amplifier is disabled by setting V BIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN. VCC VCC 2.2 µF RF IN VBIAS VCC 100 pF 0.1 µF VATTN VCC VCC 12 2 RFIN GND 11 3 GND RFOUT 10 4 VBIAS GND 9 5 VCC GND 8 DET 7 6 VATTN GND at slug 2.2 µF RF OUT DETOUT 4.7 K Figure 16: Application Circuit 8 1 µF 0.01 µF 1 PRELIMINARY DATA SHEET - Rev 1.1 11/2006 0.1 µF AWM6432 Figure 17: Land Pattern PRELIMINARY DATA SHEET - Rev 1.1 11/2006 9 AWM6432 PACKAGE OUTLINE Figure 18: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module 10 PRELIMINARY DATA SHEET - Rev 1.1 11/2006 AWM6432 NOTES PRELIMINARY DATA SHEET - Rev 1.1 11/2006 11 AWM6432 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWM6432RM18P8 -40 °C to +85 °C RoHS-compliant 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module 2,500 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.1 11/2006