2SB562 Silicon PNP Epitaxial REJ03G0646-0200 (Previous ADE-208-1024) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Symbol VCBO VCEO VEBO IC iC(peak) Ratings –25 –20 –5 –1.0 –1.5 Unit V V V A A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.9 150 –55 to +150 W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB562 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 Min –25 –20 –5 — 85 Typ — — — — — Max — — — –1.0 240 Unit V V V µA Collector to emitter saturation voltage VCE(sat) — –0.2 –0.5 V IC = –0.8 A, IB = –0.08 A (Pulse test) Base to emitter voltage VBE — –0.8 –1.0 V VCE = –2 V, IC = –0.5 A (Pulse test) Gain bandwidth product fT — 350 — MHz VCE = –2 V, IC = –0.5 A (Pulse test) Cob — 38 — pF Collector output capacitance Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev.2.00 Aug 10, 2005 page 2 of 5 Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –2 V, IC = –0.5 A (Pulse test) VCB = –10 V, IE = 0 f = 1 MHz 2SB562 Main Characteristics Typical Output Characteristics –1,000 –600 –5 –4 –2 –200 –1 mA 100 50 0 150 Typical Transfer Characteristics –1.2 –1.6 –2.0 3,000 DC Current Transfer Ratio hFE –300 VCE = –2 V Pulse 1,000 Ta = 75°C 25°C –10 –3 0 –0.2 –0.4 –0.6 –0.8 Ta = 75°C 100 25°C 30 10 –1 –1.0 –0.20 IC = 10 IB Pulse test –0.15 Ta = 75°C –0.10 25°C –0.05 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 Collector to Emitter Saturation Voltage VCE(sat) (V) –0.25 –10 –30 –100 –300 Collector Current IC (mA) Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current –3 Collector to Emitter Saturation Voltage vs. Base Current –1.0 –0.8 –0.6 Pulse test –800 mA –30 300 IC = –500 mA VCE = –2 V –100 0 –0.8 DC Current Transfer Ratio vs.Collector Current –1,000 –1 –0.4 Collector Emitter Voltage VCE (V) Ambient Temperature Ta (°C) Collector Current IC (mA) –3 –400 IB = 0 0 Collector to Emitter Saturation Voltage VCE(sat) (V) W 0.4 –8 –7 –6 9 0. 0.8 –800 = Collector Current IC (mA) 1.2 PC Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve –0.4 –0.2 0 –1 –3 –10 –30 Base Current IB (mA) –100 –1,000 2SB562 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 f = 1 MHz IE = 0 100 50 30 10 –1 –3 –10 –30 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB562 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SB562BTZ-E 2SB562CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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