2SC4308 Silicon NPN Epitaxial Planar REJ03G0723-0200 (Previous ADE-208-1103) Rev.2.00 Aug.10.2005 Application VHF Wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 300 500 600 150 –55 to +150 Unit V V V mA mA mW °C °C 2SC4308 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE fT Cob Min 30 20 — — 50 1.5 — Typ — — — — — 2.5 4.0 Max — — 1 10 200 — — Unit V V µA µA GHz pF Test conditions IC = 100 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC4308 Main Characteristics Typical Output Characteristics 200 600 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 50 0 100 150 2.5 2.0 1.5 100 0.1 0.5mA 0 1.0 2.0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Base to Emitter Voltage vs. Collector Current 10 VCE = 5 V Pulse Test Ta = 75°C 100 25 –25 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE 3.0 IB = 0 1,000 10 VCE = 5 V Pulse Test Ta = –25°C 1.0 75 25 0.1 1 10 1,000 100 1 10 1,000 100 Collector Current IC (mA) Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 10,000 1.0 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 0 5 4. 3. Ta = 75°C 25 0.1 –25 IC = 10 IB Pulse Test 0.01 1 10 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 1,000 VCE = 5 V 1,000 100 1 10 100 Collector Current IC (mA) 1,000 2SC4308 Emitter Input Capacitnce vs. Emitter to Base Votlage 100 f = 1 MHz IE = 0 10 1 10 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector Current 100 f = 1 MHz IC = 0 10 1 0.1 1.0 10 Emitter to Base Voltage VEB (V) 2SC4308 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.5 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC4308TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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