2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 (Previous ADE-208-975A) Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC PC Ratings –300 –300 –5 –50 750 Unit V V V mA mW Tj Tstg 150 –55 to +150 °C °C 2SB1688 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Emitter cutoff current Base to emitter voltage DC current transfer ratio Collector to emitter saturation voltage Rev.3.00 Aug 10, 2005 page 2 of 5 Symbol ICBO ICEO IEBO VBE hFE VCE(sat) Min — — — — 80 — Typ — — — — — — Max –0.1 –0.1 –10 –0.75 160 –0.9 Unit µA µA µA V — V Test Conditions VCB = –300V, IE = 0 VCE = –300V, RBE = ∞ VEB = –5 V, IC = 0 VCE = –6V, I C = –1mA VCE = –6V, IC = –2mA IC = –30mA, IB = –3mA 2SB1688 Main Characteristics Typical Output Characteristics –10 1.5 Collector Current IC (mA) Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 1.0 0.5 50 0 100 150 –8 –40 µA –6 –30 µA –4 –20 µA –2 IB = –10 µA 0 –20 –40 –60 –80 –100 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 1,000 –10 DC Current Transfer Ratio hFE 25°C Ta = 75°C –1.0 VCE = –6 V Pulse test –0.1 –25°C –0.01 0 –0.2 –0.4 –0.6 –0.8 Ta = 75°C VCE = –6 V Pulse Test –1.0 25°C Ta = 75°C –0.1 –25°C –0.01 –0.1 –1.0 –10 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 –100 –10 –100 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) IC/IB = 10 Pulse Test –1.0 Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current –10 –25°C 10 1 –0.1 –1.0 25°C 100 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage VCE (sat) (V) –50 µA –70 µA Pulse Test –100 Collector Current IC (mA) –60 µA 1,000 VCE = –6 V 100 10 1 –0.1 –1.0 –10 Collector Current IC (mA) –100 2SB1688 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 f = 1 MHz IE = 0 10 1.0 0.1 –0.1 –1.0 –10 –100 Collector to Base Voltage VCB (V) Rev.3.00 Aug 10, 2005 page 4 of 5 2SB1688 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SB1688TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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