Eon Silicon Solution Inc. Page 1/6 Specification Comparison Customer : APPLE Part No. : EN25P16 Issued date : 2007 / 12 / 10 Prepared by : FAE EngineerSunny Tai Approval by : FAE ManagerJason Tseng This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10 Eon Silicon Solution Inc. Page 2/6 1. Part No. Eon : EN25P16 SST : SST25VF016B Eon EN25P16-75VIP EN25P16-75HCP SST SST25VF016B-50-4C-QAF SST25VF016B-50-4C-S2AF 2. Basic Features: The following features are identical with each other. 2.7 – 3.6 Read/Program/Erase Voltage. Software and Hardware Write Protection features Hold# Operation JEDEC standard compatible pin-out and command sets. Available package : 8-Lead SOP 200mil and 8-Lead VDFN. 3. Differences: High Performance EN25P16: 75MHz clock rate SST25VF016B: 50MHz clock rate Read ID Instruction EN25P16: - Read Device ID (ABh) - Read Manufacturer / Device ID (90h) - Read Identification (RDID) (9Fh) OP Code (M7-M0) (ID15-ID0) ABh 14h 90h 1Ch 9Fh 1Ch 14h 2015h This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. (ID7-ID0) ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10 Eon Silicon Solution Inc. Page 3/6 SST25VF016B: - Read ID (90h) or (ABh) - JEDEC ID (9Fh) Uniform Sector Architecture: EN25P16 : Thirty two 64-Kbyte sectors SST25VF016B : - uniform 4Kbyte sectors. - uniform 32Kbyte overlay blocks - uniform 64Kbyte overlay blocks Erase Operation instructions EN25P16 : 64Kbyte Sector Erase (D8h) Chip Erase (C7h) SST25VF016B : 4Kbyte Sector Erase (20h) 32Kbyte Block Erase (52h) 64Kbyte Block Erase (D8h) Chip Erase (C7h) or (60h) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10 Eon Silicon Solution Inc. Page 4/6 Program Operation instructions EN25P16: Page Program (02h) SST25VF016B: Byte-Program (02h) AAI-Word-Program (ADh) Deep Power-down (B9h) EN25P16: Yes SST25VF016B: No Enable-Write-Status-Register (50h) EN25P16: No. SST25VF016B: Yes. EBSY and DBSY instruction ( enable and disable SO to output RY/BY# status during AAI programming ) EN25P16: No SST25VF016B: Yes Protected Area Sizes Sector Organization EN25P16: Status Register Content BP2 BP1 BP0 Bit Bit Bit 1 1 1 1 1 0 1 0 1 1 0 0 0 1 1 0 1 0 0 0 1 0 0 0 Memory Content Addresses Protect Sectors All All Sector 16 to 31 Sector 24 to 31 Sector 28 to 31 Sector 30 to 31 Sector 31 None 000000h-1FFFFFh 000000h-1FFFFFh 100000h-1FFFFFh 180000h-1FFFFFh 1C0000h-1FFFFFh 1E0000h-1FFFFFh 1F0000h-1FFFFFh 2048KB 2048KB 1024KB 512KB 256KB 128KB 64KB None This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. Density(KB) None Portion All All Upper 1/2 Upper 1/4 Upper 1/8 Upper 1/16 Upper 1/32 None ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10 Eon Silicon Solution Inc. Page 5/6 SST25VF016B: Status Register Bit Protection Level None Upper 1/32 BP3 X BP2 0 BP1 0 BP0 0 X 0 0 1 Protected Memory Addresses 16 Mbit None 1F0000h-1FFFFFh Upper 1/16 X 0 1 0 1E0000h-1FFFFFh Upper 1/8 X 0 1 1 1C0000h-1FFFFFh Upper 1/4 X 1 0 0 180000h-1FFFFFh Upper 1/2 X 1 0 1 100000h-1FFFFFh All Blocks X 1 1 0 000000h-1FFFFFh All Blocks X 1 1 1 000000h-1FFFFFh Block Protection Bits Status after power up EN25P16: BP2, BP1 and BP0 are set to 0 after power up. SST25VF016B: BP3, BP2, BP1 and BP0 are set to 1 after power up 4. Other: a. Absolute Maximum Ratings EN25P16 SST25VF016B Storage Temperature - 65°C to +125°C -65°C to +150°C Plastic Packages - 65°C to +125°C Temperature Under Bias Any Pin to Ground DC Voltage - 0.5 V to + 4.0V Output Short Circuit Current 200 mA -0.5V to VDD+0.5V Operating Range 0°C to +70°C 0°C to +70°C This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. -55°C to +125°C 50mA ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10 Eon Silicon Solution Inc. Page 6/6 b. Electrical Characteristics Program/Erase Endurance EN25P16 100 k cycles SST25VF016B 10 k cycles Data Retention 125 °C 20 years 100 years Latch Up current 100 mA 100 + IDD mA High Speed Clock Frequency 75 MHZ 50 MHZ Byte Program time Typ 7 us Typ 7 us Input Leakage Current ±2 uA 1 uA Output Leakage Current ±2 uA 1 uA Program/Erase Current Max 15 mA Max 30 mA c. Pin Configuration EN25P16 SST25VF016B Serial Clock Input Serial Data Input SCK SI Serial Data Output DO CS# Chip Enable CE# Write Protect WP# WP# Hold HOLD# Power Supply Vcc HOLD# VDD Ground Vss VSS This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. CLK DI SO ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2007/ 12/ 10