SST25VF016B - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
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Specification Comparison
Customer :
APPLE
Part No. :
EN25P16
Issued date :
2007 / 12 / 10
Prepared by :
FAE EngineerSunny Tai
Approval by :
FAE ManagerJason Tseng
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10
Eon Silicon Solution Inc.
Page
2/6
1. Part No.
Eon :
EN25P16
SST :
SST25VF016B
Eon
EN25P16-75VIP
EN25P16-75HCP
SST
SST25VF016B-50-4C-QAF
SST25VF016B-50-4C-S2AF
2. Basic Features:
The following features are identical with each other.
2.7 – 3.6 Read/Program/Erase Voltage.
Software and Hardware Write Protection features
Hold# Operation
JEDEC standard compatible pin-out and command sets.
Available package : 8-Lead SOP 200mil and 8-Lead VDFN.
3. Differences:
High Performance
EN25P16: 75MHz clock rate
SST25VF016B: 50MHz clock rate
Read ID Instruction
EN25P16:
- Read Device ID (ABh)
-
Read Manufacturer / Device ID (90h)
-
Read Identification (RDID) (9Fh)
OP Code
(M7-M0)
(ID15-ID0)
ABh
14h
90h
1Ch
9Fh
1Ch
14h
2015h
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
(ID7-ID0)
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10
Eon Silicon Solution Inc.
Page
3/6
SST25VF016B:
- Read ID (90h) or (ABh)
-
JEDEC ID (9Fh)
Uniform Sector Architecture:
EN25P16 :
Thirty two 64-Kbyte sectors
SST25VF016B :
- uniform 4Kbyte sectors.
- uniform 32Kbyte overlay blocks
- uniform 64Kbyte overlay blocks
Erase Operation instructions
EN25P16 :
64Kbyte Sector Erase (D8h)
Chip Erase (C7h)
SST25VF016B :
4Kbyte Sector Erase (20h)
32Kbyte Block Erase (52h)
64Kbyte Block Erase (D8h)
Chip Erase (C7h) or (60h)
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10
Eon Silicon Solution Inc.
Page
4/6
Program Operation instructions
EN25P16:
Page Program (02h)
SST25VF016B:
Byte-Program (02h)
AAI-Word-Program (ADh)
Deep Power-down (B9h)
EN25P16: Yes
SST25VF016B: No
Enable-Write-Status-Register (50h)
EN25P16: No.
SST25VF016B: Yes.
EBSY and DBSY instruction ( enable and disable SO to output RY/BY# status
during AAI programming )
EN25P16: No
SST25VF016B: Yes
Protected Area Sizes Sector Organization
EN25P16:
Status Register Content
BP2
BP1
BP0
Bit
Bit
Bit
1
1
1
1
1
0
1
0
1
1
0
0
0
1
1
0
1
0
0
0
1
0
0
0
Memory Content
Addresses
Protect Sectors
All
All
Sector 16 to 31
Sector 24 to 31
Sector 28 to 31
Sector 30 to 31
Sector 31
None
000000h-1FFFFFh
000000h-1FFFFFh
100000h-1FFFFFh
180000h-1FFFFFh
1C0000h-1FFFFFh
1E0000h-1FFFFFh
1F0000h-1FFFFFh
2048KB
2048KB
1024KB
512KB
256KB
128KB
64KB
None
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
Density(KB)
None
Portion
All
All
Upper 1/2
Upper 1/4
Upper 1/8
Upper 1/16
Upper 1/32
None
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10
Eon Silicon Solution Inc.
Page
5/6
SST25VF016B:
Status Register Bit
Protection Level
None
Upper 1/32
BP3
X
BP2
0
BP1
0
BP0
0
X
0
0
1
Protected Memory Addresses
16 Mbit
None
1F0000h-1FFFFFh
Upper 1/16
X
0
1
0
1E0000h-1FFFFFh
Upper 1/8
X
0
1
1
1C0000h-1FFFFFh
Upper 1/4
X
1
0
0
180000h-1FFFFFh
Upper 1/2
X
1
0
1
100000h-1FFFFFh
All Blocks
X
1
1
0
000000h-1FFFFFh
All Blocks
X
1
1
1
000000h-1FFFFFh
Block Protection Bits Status after power up
EN25P16: BP2, BP1 and BP0 are set to 0 after power up.
SST25VF016B: BP3, BP2, BP1 and BP0 are set to 1 after power up
4. Other:
a. Absolute Maximum Ratings
EN25P16
SST25VF016B
Storage Temperature
- 65°C to +125°C -65°C to +150°C
Plastic Packages
- 65°C to +125°C
Temperature Under Bias
Any Pin to Ground DC Voltage - 0.5 V to + 4.0V
Output Short Circuit Current
200 mA
-0.5V to VDD+0.5V
Operating Range
0°C to +70°C
0°C to +70°C
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
-55°C to +125°C
50mA
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10
Eon Silicon Solution Inc.
Page
6/6
b. Electrical Characteristics
Program/Erase Endurance
EN25P16
100 k cycles
SST25VF016B
10 k cycles
Data Retention
125 °C 20 years 100 years
Latch Up current
100 mA
100 + IDD mA
High Speed Clock Frequency 75 MHZ
50 MHZ
Byte Program time
Typ 7 us
Typ 7 us
Input Leakage Current
±2 uA
1 uA
Output Leakage Current
±2 uA
1 uA
Program/Erase Current
Max 15 mA
Max 30 mA
c. Pin Configuration
EN25P16 SST25VF016B
Serial Clock Input
Serial Data Input
SCK
SI
Serial Data Output DO
CS#
Chip Enable
CE#
Write Protect
WP#
WP#
Hold
HOLD#
Power Supply
Vcc
HOLD#
VDD
Ground
Vss
VSS
This Application Note may be revised by subsequent
versions or modifications due to changes in technical
specifications.
CLK
DI
SO
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2007/ 12/ 10