Eon Silicon Solution Inc. Application Note EON EN25Q32B (Version : Preliminary 0.2) vs Winbond W25Q32BV (Version : D) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Winbond W25Q32BV Flash to Eon EN25Q32B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table highlights the major features of these two devices. Features Voltage range Pin to pin compatible (standard SPI mode) SPI mode SPI frequency (standard mode) Sector architecture Lockable OTP security sector EQIO mode (Full quad mode) Block erase 32K Byte Program and erase suspend / resume Minimum endurance cycle Package EN25Q32B 2.7 ~ 3.6V W25Q32BV 2.7 ~ 3.6V N/A N/A Mode 0 / Mode 3 104MHz (standard mode) 80MHz @ dual & quad mode Mode 0 / Mode 3 104MHz (standard mode) 80MHz @ dual & quad mode Uniform 1024 sectors of 4K byte 128 blocks of 32K byte 64 blocks of 64K byte Uniform 1024 sectors of 4K byte 64 blocks of 64K byte 512 Byte 1K Byte Yes No No Yes No Yes 100K 100K 8 pins SOP 200mil 8 contact VDFN (5 x 6mm) 16 pins SOP 300mil 24 balls BGA (6 x 8mm) 8-pin SOIC 208mil 8-pad WSON (6 x 5mm, 8 x 6mm) 16-pin SOIC 300mil 8-pin PDIP 300mil This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison EN25Q32B W25Q32BV Read ICC3 Max ( @ Single 104MHz) 25 Max ( @ Quad 80MHz) 18 Page Program (PP) ICC4 28 25 mA Sector Erase (SE) ICC6 25 25 mA Standby ICC1 20 50 A Current This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 Unit mA www.eonssi.com Eon Silicon Solution Inc. 3.2 Pin Configuration 8-pin SOP 150mil For EN25Q32B For W25Q32BV This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) comparison. For EN25Q32B For W25Q32BV This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.2. Instruction set comparison EN25Q32B W25Q32BV does not support EQIO, RSTQIO, RSTEN, RST, Enter OTP mode instructions. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. W25Q32BV EN25Q32B does not support Write Enable for Volatile Status Register, Read Status Register-2, Quad Page Program, Block Erase(32KB), Erase / Program Suspend, Erase / Program Resume, Continuous Read Mode Reset, Fast Read Quad Output, Word Read Quad I/O, Octal Word Read Quad I/O, Set Burst with Wrap, Read Manufacturer / Device ID by Dual I/O, Read Manufacturer / Device ID by Quad I/O, Read Unique ID, Erase Security Registers, Program Security Registers, Read Security Registers instructions. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.3 Different block protection area The definition of block protection area is different. EN25Q32B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. W25Q32BV CMP = 0 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. CMP = 1 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 12 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.4 Different RDSR bit definition The definition of RDSR bit S5 and S6 are different, and EN25Q32A does not have S8 ~ S15 bits. EN25Q32B W25Q32BV This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN25Q32B Parameter W25Q32BV Unit Typ Max Typ Max Page programming time 0.8 5 0.7 3 ms Sector erase time 0.05 0.3 0.03 0.2 sec Block erase time 0.2 2 0.15 1 sec Chip (Bulk) erase time 15 25 7 15 sec 5.2 KEY AC PARAMETER PERFORMANCE EN25Q32B W25Q32BV tCH (serial clock high time) Min @ 4ns Min @ 6ns tCL (serial clock low time) Min @ 4ns Min @ 6ns tCLCH(serial clock rise time) Min @ 0.1V / ns Min @ 0.1V / ns tCLCL(serial clock fall time) Min @ 0.1V / ns Min @ 0.1V / ns Min@ 5ns Min @ 5ns Min @ 50ns Min @ 5ns tDSU(Data in setup time) Min @ 2ns Min @ 1.5ns tDH(Data in hold time) Min @ 5ns Min @ 4ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 14 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/07/01 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com